Shuichi Noda

2.7k total citations
58 papers, 716 citations indexed

About

Shuichi Noda is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Materials Chemistry. According to data from OpenAlex, Shuichi Noda has authored 58 papers receiving a total of 716 indexed citations (citations by other indexed papers that have themselves been cited), including 41 papers in Electrical and Electronic Engineering, 14 papers in Biomedical Engineering and 13 papers in Materials Chemistry. Recurrent topics in Shuichi Noda's work include Semiconductor materials and devices (23 papers), Plasma Diagnostics and Applications (14 papers) and Advancements in Semiconductor Devices and Circuit Design (11 papers). Shuichi Noda is often cited by papers focused on Semiconductor materials and devices (23 papers), Plasma Diagnostics and Applications (14 papers) and Advancements in Semiconductor Devices and Circuit Design (11 papers). Shuichi Noda collaborates with scholars based in Japan, United States and Taiwan. Shuichi Noda's co-authors include Seiji Samukawa, Satoshi Morishita, Yukinobu Hikosaka, Takuya Ozaki, Fuminori Ishibashi, Masami Inoue, Hisataka Hayashi, Tetsuya Tatsumi, Mitsuru Okigawa and Kazuhiko Endo and has published in prestigious journals such as SHILAP Revista de lepidopterología, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Shuichi Noda

55 papers receiving 675 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Shuichi Noda Japan 16 503 161 110 109 105 58 716
N. Gordillo Spain 17 195 0.4× 493 3.1× 119 1.1× 103 0.9× 112 1.1× 50 787
I. Mazzaro Brazil 13 135 0.3× 272 1.7× 38 0.3× 201 1.8× 165 1.6× 40 574
H. Shiomi Japan 13 159 0.3× 87 0.5× 44 0.4× 45 0.4× 140 1.3× 52 457
A. Jakubowski Poland 13 222 0.4× 205 1.3× 113 1.0× 57 0.5× 44 0.4× 56 517
J. A. Rowlands Canada 14 235 0.5× 240 1.5× 24 0.2× 184 1.7× 184 1.8× 53 821
P. Kleimann France 17 350 0.7× 225 1.4× 69 0.6× 559 5.1× 143 1.4× 43 988
Bruno Sixou France 17 158 0.3× 149 0.9× 55 0.5× 317 2.9× 71 0.7× 66 933
Stanislaw Szpala Canada 8 111 0.2× 100 0.6× 121 1.1× 32 0.3× 62 0.6× 16 329
I.F. Bubb Australia 11 167 0.3× 112 0.7× 77 0.7× 28 0.3× 190 1.8× 37 455
Shawn McVey United States 13 327 0.7× 150 0.9× 25 0.2× 217 2.0× 28 0.3× 24 662

Countries citing papers authored by Shuichi Noda

Since Specialization
Citations

This map shows the geographic impact of Shuichi Noda's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Shuichi Noda with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Shuichi Noda more than expected).

Fields of papers citing papers by Shuichi Noda

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Shuichi Noda. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Shuichi Noda. The network helps show where Shuichi Noda may publish in the future.

Co-authorship network of co-authors of Shuichi Noda

This figure shows the co-authorship network connecting the top 25 collaborators of Shuichi Noda. A scholar is included among the top collaborators of Shuichi Noda based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Shuichi Noda. Shuichi Noda is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Noda, Shuichi, Wataru Mizubayashi, Kazuhiko Endo, et al.. (2021). High Electron Mobility Germanium FinFET Fabricated by Atomic Layer Defect-Free and Roughness-Free Etching. SHILAP Revista de lepidopterología. 2. 26–30. 8 indexed citations
2.
Noda, Shuichi, et al.. (2020). AlN Film Characteristics Deposited by Minimal Fab Reactive Sputtering Tool (2). The Japan Society of Applied Physics.
3.
Жигунов, Д. М., et al.. (2019). Structural optimization and quantum size effect of Si-nanocrystals in SiC interlayer fabricated with bio-template. Materials Research Express. 6(6). 65059–65059. 7 indexed citations
4.
Noda, Shuichi, Daisuke Sato, Hideyuki Kurihara, et al.. (2019). Atomic layer defect-free etching for germanium using HBr neutral beam. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 37(5). 4 indexed citations
5.
Noda, Shuichi, Wataru Mizubayashi, Kazuhiko Endo, et al.. (2019). Atomic layer germanium etching for 3D Fin-FET using chlorine neutral beam. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 37(2). 14 indexed citations
6.
Lin, Yen-Ku, Shuichi Noda, Chia-Hsun Wu, et al.. (2017). High-Performance GaN MOSHEMTs Fabricated With ALD Al2O3Dielectric and NBE Gate Recess Technology for High Frequency Power Applications. IEEE Electron Device Letters. 38(6). 771–774. 28 indexed citations
7.
Mizubayashi, Wataru, Shuichi Noda, Yuki Ishikawa, et al.. (2017). Impacts of plasma-induced damage due to UV light irradiation during etching on Ge fin fabrication and device performance of Ge fin field-effect transistors. Applied Physics Express. 10(2). 26501–26501. 31 indexed citations
8.
Lin, Yen-Ku, Shuichi Noda, Chia-Hsun Wu, et al.. (2016). AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications. IEEE Electron Device Letters. 37(11). 1395–1398. 23 indexed citations
9.
10.
Furuta, Takuya, Takuya Maeyama, Kenichi L. Ishikawa, et al.. (2015). Comparison between Monte Carlo simulation and measurement with a 3D polymer gel dosimeter for dose distributions in biological samples. Physics in Medicine and Biology. 60(16). 6531–6546. 24 indexed citations
11.
Noda, Shuichi, et al.. (2013). Cu2O/ZnO Heterojunction Solar Cells Fabricated by Magnetron-Sputter Deposition Method Films Using Sintered Ceramics Targets. Journal of Physics Conference Series. 433. 12027–12027. 31 indexed citations
12.
Noda, Shuichi, R. O. Nelson, M. Devlin, et al.. (2011). 二重飛行時間法を使った 235 Uと 239 Puに対して1から8MeVの中性子によって誘起された融合からの即発融合中性子スペクトル. Physical review. C. 83(3). 1–34604. 4 indexed citations
13.
Mazur, Yu. I., V. G. Dorogan, Oliver Bierwagen, et al.. (2009). Spectroscopy of shallow InAs/InP quantum wire nanostructures. Nanotechnology. 20(6). 65401–65401. 7 indexed citations
14.
Mazur, Yu. I., Shuichi Noda, G. G. Tarasov, et al.. (2008). Excitonic band edges and optical anisotropy of InAs∕InP quantum dot structures. Journal of Applied Physics. 103(5). 7 indexed citations
15.
Endo, Kazuhiko, Shuichi Noda, Takuya Ozaki, et al.. (2006). New Fabrication Technology of Fin Field Effect Transistors Using Neutral-Beam Etching. Japanese Journal of Applied Physics. 45(6S). 5513–5513. 5 indexed citations
16.
Nakagawa, Hideo, Satoshi Morishita, Shuichi Noda, et al.. (1999). Characterization of 100 MHz inductively coupled plasma (ICP) by comparison with 13.56 MHz ICP. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 17(4). 1514–1519. 14 indexed citations
17.
Ishibashi, Fuminori & Shuichi Noda. (1996). Fequencies and Modes of Electromagnetic Vibration of a Small Induction Motor.. IEEJ Transactions on Industry Applications. 116(11). 1110–1115. 5 indexed citations
18.
Noda, Shuichi, et al.. (1994). Fabrication of reliable x-ray mask using high-temperature deposited SiN membrane by low-pressure chemical vapor deposition system. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 2254. 304–304. 1 indexed citations
19.
Yamashita, Yoshio, et al.. (1993). Effect of synchrotron radiation on electrical characteristics of SiOxNy thin films formed by rapid thermal processing in a N2O ambient. Applied Physics Letters. 63(24). 3364–3366. 3 indexed citations
20.
Okuyama, Hiroshi, et al.. (1993). Improvement in Radiation Stability of SiN X-Ray Mask Membranes. Japanese Journal of Applied Physics. 32(12S). 5941–5941. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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