Satish D. Athavale

570 total citations
10 papers, 487 citations indexed

About

Satish D. Athavale is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Materials Chemistry. According to data from OpenAlex, Satish D. Athavale has authored 10 papers receiving a total of 487 indexed citations (citations by other indexed papers that have themselves been cited), including 10 papers in Electrical and Electronic Engineering, 4 papers in Condensed Matter Physics and 4 papers in Materials Chemistry. Recurrent topics in Satish D. Athavale's work include Semiconductor materials and devices (10 papers), GaN-based semiconductor devices and materials (4 papers) and Ferroelectric and Piezoelectric Materials (3 papers). Satish D. Athavale is often cited by papers focused on Semiconductor materials and devices (10 papers), GaN-based semiconductor devices and materials (4 papers) and Ferroelectric and Piezoelectric Materials (3 papers). Satish D. Athavale collaborates with scholars based in United States and Germany. Satish D. Athavale's co-authors include Demetre J. Economou, J. D. Baniecki, David M. Hoffman, C. Cabral, Wei‐Kan Chu, Haibo Shen, David E. Kotecki, T. M. Shaw, G. Kunkel and Richard Wise and has published in prestigious journals such as Journal of materials research/Pratt's guide to venture capital sources, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films and IBM Journal of Research and Development.

In The Last Decade

Satish D. Athavale

10 papers receiving 465 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Satish D. Athavale United States 7 400 291 91 66 63 10 487
Soichi OGAWA Japan 10 215 0.5× 268 0.9× 119 1.3× 44 0.7× 88 1.4× 36 423
Paihung Pan United States 12 379 0.9× 181 0.6× 69 0.8× 55 0.8× 84 1.3× 18 456
Andrew S. Alimonda United States 8 404 1.0× 189 0.6× 104 1.1× 54 0.8× 30 0.5× 12 459
Shashank C. Deshmukh United States 7 277 0.7× 166 0.6× 81 0.9× 35 0.5× 89 1.4× 16 374
B. Wacker United States 8 705 1.8× 533 1.8× 65 0.7× 63 1.0× 27 0.4× 9 743
Katsuhiro Yokota Japan 11 242 0.6× 196 0.7× 104 1.1× 42 0.6× 29 0.5× 72 377
R. Bisaro France 9 268 0.7× 222 0.8× 36 0.4× 54 0.8× 41 0.7× 27 366
Tomio Izumi Japan 13 323 0.8× 317 1.1× 54 0.6× 85 1.3× 27 0.4× 43 450
A. Nakaue Japan 9 164 0.4× 182 0.6× 121 1.3× 44 0.7× 59 0.9× 23 366
Sergio A. Ajuria United States 10 485 1.2× 208 0.7× 42 0.5× 19 0.3× 64 1.0× 27 523

Countries citing papers authored by Satish D. Athavale

Since Specialization
Citations

This map shows the geographic impact of Satish D. Athavale's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Satish D. Athavale with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Satish D. Athavale more than expected).

Fields of papers citing papers by Satish D. Athavale

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Satish D. Athavale. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Satish D. Athavale. The network helps show where Satish D. Athavale may publish in the future.

Co-authorship network of co-authors of Satish D. Athavale

This figure shows the co-authorship network connecting the top 25 collaborators of Satish D. Athavale. A scholar is included among the top collaborators of Satish D. Athavale based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Satish D. Athavale. Satish D. Athavale is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

10 of 10 papers shown
1.
Nagel, N., G. Costrini, Satish D. Athavale, et al.. (2001). Three dimensional (BA, SR) TIO 3 stack capacitors for dram application. Integrated ferroelectrics. 38(1-4). 259–267. 5 indexed citations
2.
Athavale, Satish D., et al.. (2000). Patterning of 0.175 μm platinum features using Ar/O2 chemically assisted ion-beam etching. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 18(2). 765–773. 7 indexed citations
3.
Saenger, K. L., P. C. Andricacos, Satish D. Athavale, et al.. (2000). Electrodes and Barriers for Dram and Feram: Processing, Integration, and Fundamentals. MRS Proceedings. 655. 2 indexed citations
4.
Kotecki, David E., J. D. Baniecki, Haibo Shen, et al.. (1999). (Ba,Sr)TiO3 dielectrics for future stacked- capacitor DRAM. IBM Journal of Research and Development. 43(3). 367–382. 164 indexed citations
5.
Athavale, Satish D. & Demetre J. Economou. (1996). Realization of atomic layer etching of silicon. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 14(6). 3702–3705. 130 indexed citations
6.
Hoffman, David M., et al.. (1996). Chemical vapor deposition of aluminum and gallium nitride thin films from metalorganic precursors. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 14(2). 306–311. 41 indexed citations
7.
Hoffman, David M., et al.. (1995). Plasma-enhanced chemical vapor deposition of silicon, germanium, and tin nitride thin films from metalorganic precursors. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 13(3). 820–825. 33 indexed citations
8.
Athavale, Satish D. & Demetre J. Economou. (1995). Molecular dynamics simulation of atomic layer etching of silicon. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 13(3). 966–971. 98 indexed citations
9.
Hoffman, David M., Satish D. Athavale, Shashank C. Deshmukh, et al.. (1994). Plasma enhanced chemical vapor deposition of silicon nitride films from a metal-organic precursor. Journal of materials research/Pratt's guide to venture capital sources. 9(12). 3019–3021. 6 indexed citations
10.
Hoffman, David M., et al.. (1993). Plasma Enhanced Metal-Organic Chemical Vapor Deposition of Germanium Nitride Thin Films. MRS Proceedings. 335. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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