D. Carl

432 total citations
17 papers, 365 citations indexed

About

D. Carl is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Materials Chemistry. According to data from OpenAlex, D. Carl has authored 17 papers receiving a total of 365 indexed citations (citations by other indexed papers that have themselves been cited), including 13 papers in Electrical and Electronic Engineering, 7 papers in Electronic, Optical and Magnetic Materials and 6 papers in Materials Chemistry. Recurrent topics in D. Carl's work include Semiconductor materials and devices (11 papers), Copper Interconnects and Reliability (5 papers) and Metal and Thin Film Mechanics (4 papers). D. Carl is often cited by papers focused on Semiconductor materials and devices (11 papers), Copper Interconnects and Reliability (5 papers) and Metal and Thin Film Mechanics (4 papers). D. Carl collaborates with scholars based in United States and Israel. D. Carl's co-authors include M. A. Lieberman, Dennis W. Hess, R. Grónsky, Anna Lichtenberg, Roland Kröger, M. Eizenberg, Norimitsu Yoshida, I.G. Brown, Xueyu Qian and N.W. Cheung and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

D. Carl

16 papers receiving 349 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
D. Carl United States	11	324	123	114	98	55	17	365
T. W. Hamilton United States	11	379 1.2×	77 0.6×	72 0.6×	180 1.8×	41 0.7×	16	407
Sergi Gomez United States	9	341 1.1×	31 0.3×	96 0.8×	121 1.2×	42 0.8×	9	387
David A. Glocker United States	9	147 0.5×	52 0.4×	132 1.2×	173 1.8×	47 0.9×	25	284
M. Mišina Czechia	11	242 0.7×	53 0.4×	236 2.1×	309 3.2×	51 0.9×	23	430
Sivananda Kanakasabapathy United States	7	175 0.5×	51 0.4×	42 0.4×	51 0.5×	49 0.9×	13	217
Shashank C. Deshmukh United States	7	277 0.9×	89 0.7×	166 1.5×	81 0.8×	45 0.8×	16	374
J. M. Cook United States	8	686 2.1×	151 1.2×	233 2.0×	305 3.1×	46 0.8×	9	748
Katsunori Ichiki Japan	6	293 0.9×	27 0.2×	94 0.8×	72 0.7×	81 1.5×	11	365
E. Lane United States	12	321 1.0×	35 0.3×	75 0.7×	116 1.2×	116 2.1×	31	374
M. S. Ameen United States	10	199 0.6×	61 0.5×	181 1.6×	52 0.5×	77 1.4×	31	331

Countries citing papers authored by D. Carl

Since Specialization

Citations

This map shows the geographic impact of D. Carl's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Carl with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Carl more than expected).

Fields of papers citing papers by D. Carl

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Carl. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Carl. The network helps show where D. Carl may publish in the future.

Co-authorship network of co-authors of D. Carl

This figure shows the co-authorship network connecting the top 25 collaborators of D. Carl. A scholar is included among the top collaborators of D. Carl based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D. Carl. D. Carl is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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17 of 17 papers shown

Gilbert, Stephen R., Chi Chen, D. V. Taylor, et al.. (2003). Preparation of Pb(Zr,Ti)O3 thin films by metalorganic chemical vapor deposition for low voltage ferroelectric memory. Journal of Applied Physics. 93(3). 1713–1717. 40 indexed citations

Carl, D., et al.. (2000). Adhesion studies of CVD copper metallization. Microelectronic Engineering. 50(1-4). 547–553. 37 indexed citations

Kröger, Roland, et al.. (2000). Influence of diffusion barriers on the nucleation and growth of CVD Cu for interconnect applications. Microelectronic Engineering. 50(1-4). 375–381. 14 indexed citations

Kröger, Roland, et al.. (1999). Properties of Copper Films Prepared by Chemical Vapor Deposition for Advanced Metallization of Microelectronic Devices. Journal of The Electrochemical Society. 146(9). 3248–3254. 38 indexed citations

Nguyen, S., et al.. (1998). Ultrathin RTP oxynitride dielectrics on planar, trench and three dimensional structures. Microelectronics Reliability. 38(1). 81–85. 1 indexed citations

Carl, D., et al.. (1997). Characterization of a low temperature, low pressure plasma enhanced chemical vapor deposition tetraethylorthosilicate oxide deposition process. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 15(3). 1389–1393. 1 indexed citations

Carl, D., et al.. (1997). Characterization of fluorinated tetra ethyl ortho silicate oxide films deposited in a low pressure plasma enhanced chemical vapor deposition reactor. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 15(3). 1399–1402. 10 indexed citations

Nguyen, S., et al.. (1995). A Novel Fingered Stacked Capacitor Cell. Journal of The Electrochemical Society. 142(7). L111–L113.

Carl, D., et al.. (1993). New leakage mechanism in sub-5-nm oxynitride dielectrics. Applied Physics Letters. 63(14). 1972–1974. 8 indexed citations

10.

Qian, Xueyu, D. Carl, N.W. Cheung, et al.. (1991). A plasma immersion ion implantation reactor for ULSI fabrication. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 55(1-4). 884–887. 18 indexed citations

11.

Carl, D., et al.. (1991). Effects of dc bias on the kinetics and electrical properties of silicon dioxide grown in an electron cyclotron resonance plasma. Journal of Applied Physics. 70(6). 3301–3313. 50 indexed citations

12.

Carl, D., et al.. (1991). Structural and Interfacial Characteristics of thin (<10 nm) SiO₂ Films Grown by Electron Cyclotron Resonance Plasma Oxidation on [100] Si Substrates. MRS Proceedings. 223. 1 indexed citations

13.

Qian, Xueyu, Meng-Hsiung Kiang, D. Carl, et al.. (1991). Plasma immersion Pd ion implantation seeding pattern formation for selective electroless Cu plating. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 55(1-4). 888–892. 17 indexed citations

14.

Carl, D., et al.. (1991). Axial radio frequency electric field intensity and ion density during low to high mode transition in argon electron cyclotron resonance discharges. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 9(2). 339–347. 35 indexed citations

15.

Carl, D., Dennis W. Hess, & M. A. Lieberman. (1990). Oxidation of silicon in an electron cyclotron resonance oxygen plasma: Kinetics, physicochemical, and electrical properties. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 8(3). 2924–2930. 54 indexed citations

16.

Carl, D., Dennis W. Hess, & M. A. Lieberman. (1990). Kinetics of photoresist etching in an electron cyclotron resonance plasma. Journal of Applied Physics. 68(4). 1859–1865. 34 indexed citations

17.

Wong, Hiu Yung, Xueyu Qian, D. Carl, et al.. (1989). Plasma Immersion Ion Implantation for Impurity Gettering in Silicon. MRS Proceedings. 147. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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