D. Carl

432 citations

17 papers · 365 indexed · h-index 11

Impact in

Electronic, Optical and Magnetic Materials
- Copper Interconnects and Reliability
Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices
- Plasma Diagnostics and Applications
- Thin-Film Transistor Technologies
- Electrodeposition and Electroless Coatings

Papers in ⓘ

Electronic, Optical and Magnetic Materials 7
- Copper Interconnects and Reliability 5
Electrical and Electronic Engineering 13
- Semiconductor materials and devices 11
- Plasma Diagnostics and Applications 2
- Thin-Film Transistor Technologies 2

Co-authors: M. A. Lieberman (8 shared papers)Dennis W. Hess (4 shared papers)R. Grónsky (2 shared papers)Anna Lichtenberg (1 shared paper)Roland Kröger (2 shared papers)M. Eizenberg (2 shared papers)Xueyu Qian (3 shared papers)Norimitsu Yoshida (1 shared paper)
Journals: Journal of Applied Physics (3 papers)Journal of Vacuum Science & Technology A Vacuum Surfaces and Films (3 papers)Microelectronic Engineering (2 papers)Journal of The Electrochemical Society (2 papers)Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms (2 papers)
Partner nations: United States Israel

In The Last Decade

D. Carl

16 papers receiving 349 citations

Peers

Countries citing papers authored by D. Carl

Since Specialization

Citations

This map shows the geographic impact of D. Carl's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Carl with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Carl more than expected).

Fields of papers citing papers by D. Carl

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Carl. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Carl. The network helps show where D. Carl may publish in the future.

Co-authors

The 25 scholars most cited alongside D. Carl, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with D. Carl Line = papers co-authored together D. Carl links everyone, so they are left out of the graph.

All Works

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17 of 17 papers shown

#	Work
1	Oxidation of silicon in an electron cyclotron resonance oxygen plasma: Kinetics, physicochemical, and electrical properties Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·D. Carl, Dennis W. Hess, M. A. Lieberman	1990	54
2	Effects of dc bias on the kinetics and electrical properties of silicon dioxide grown in an electron cyclotron resonance plasma Journal of Applied Physics ·D. Carl, Dennis W. Hess, M. A. Lieberman, Tai D. Nguyen, R. Grónsky	1991	50
3	Preparation of Pb(Zr,Ti)O3 thin films by metalorganic chemical vapor deposition for low voltage ferroelectric memory Journal of Applied Physics ·Stephen R. Gilbert, Stevan Hunter, Debbie Ritchey, Chi Chen, D. V. Taylor, Jun Amano, S. Aggarwal, T. S. Moise, Tomoyuki Sakoda, Scott R. Summerfelt, K.K. Singh, C. Kazemi, D. Carl, B. Bierman	2003	40
4	Properties of Copper Films Prepared by Chemical Vapor Deposition for Advanced Metallization of Microelectronic Devices Journal of The Electrochemical Society ·Roland Kröger, M. Eizenberg, D. Cong, Norimitsu Yoshida, L. Y. Chen, S. Ramaswami, D. Carl	1999	38
5	Adhesion studies of CVD copper metallization Microelectronic Engineering ·Srinivas Gandikota, Steve Voss, Rong Tao, Alain Duboust, D. Cong, Liang-Yuh Chen, Sesh Ramaswami, D. Carl	2000	37
6	Axial radio frequency electric field intensity and ion density during low to high mode transition in argon electron cyclotron resonance discharges Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·D. Carl, M.C. Williamson, M. A. Lieberman, Anna Lichtenberg	1991	35
7	Kinetics of photoresist etching in an electron cyclotron resonance plasma Journal of Applied Physics ·D. Carl, Dennis W. Hess, M. A. Lieberman	1990	34
8	A plasma immersion ion implantation reactor for ULSI fabrication Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·Xueyu Qian, D. Carl, J. Benasso, N.W. Cheung, M. A. Lieberman, I.G. Brown, James E. Galvin, R.A. MacGill, Michael Current	1991	18
9	Plasma immersion Pd ion implantation seeding pattern formation for selective electroless Cu plating Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·Xueyu Qian, Meng-Hsiung Kiang, J. Huang, D. Carl, N.W. Cheung, M. A. Lieberman, I.G. Brown, K. M. Yu, Michael Current	1991	17
10	Influence of diffusion barriers on the nucleation and growth of CVD Cu for interconnect applications Microelectronic Engineering ·Roland Kröger, M. Eizenberg, D. Cong, N. Yoshida, L. Y. Chen, S. Ramaswami, D. Carl	2000	14
11	Characterization of fluorinated tetra ethyl ortho silicate oxide films deposited in a low pressure plasma enhanced chemical vapor deposition reactor Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·Mark T. Weise, S. C. Selbrede, Louie J. Arias, D. Carl	1997	10
12	New leakage mechanism in sub-5-nm oxynitride dielectrics Applied Physics Letters ·Tue Nguyen, D. Carl, S. Nguyen, David Dobuzinsky, J. W. Korejwa	1993	8
13	Plasma Immersion Ion Implantation for Impurity Gettering in Silicon MRS Proceedings ·Hiu Yung Wong, Xueyu Qian, D. Carl, N.W. Cheung, M. A. Lieberman, I.G. Brown, K. M. Yu	1989	7
14	Characterization of a low temperature, low pressure plasma enhanced chemical vapor deposition tetraethylorthosilicate oxide deposition process Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·Louie J. Arias, S. C. Selbrede, Mark T. Weise, D. Carl	1997	1
15	Structural and Interfacial Characteristics of thin (<10 nm) SiO₂ Films Grown by Electron Cyclotron Resonance Plasma Oxidation on [100] Si Substrates MRS Proceedings ·Tai D. Nguyen, D. Carl, Dennis W. Hess, M. A. Lieberman, R. Grónsky	1991	1
16	Ultrathin RTP oxynitride dielectrics on planar, trench and three dimensional structures Microelectronics Reliability ·S. Nguyen, Tue Nguyen, D. Carl, D. Pricer, J. W. Korejwa, D. Dobuzinsky	1998	1
17	A Novel Fingered Stacked Capacitor Cell Journal of The Electrochemical Society ·Tue Nguyen, S. Nguyen, David Dobuzinsky, D. Carl	1995	0

About D. Carl

D. Carl is a scholar working on Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Ceramics and Composites, Condensed Matter Physics and Mechanics of Materials, having authored 17 papers that have together received 365 indexed citations. Recurring topics across this work include Semiconductor materials and devices (11 papers), Copper Interconnects and Reliability (5 papers), Metal and Thin Film Mechanics (4 papers), Ion-surface interactions and analysis (3 papers), Electronic and Structural Properties of Oxides (2 papers), GaN-based semiconductor devices and materials (2 papers), Plasma Diagnostics and Applications (2 papers) and Thin-Film Transistor Technologies (2 papers). The work is most often cited by research in Electronic, Optical and Magnetic Materials (123 citations), Electrical and Electronic Engineering (324 citations), Mechanics of Materials (98 citations), Materials Chemistry (114 citations) and Atomic and Molecular Physics, and Optics (55 citations). D. Carl has collaborated with scholars based in United States and Israel. Frequent co-authors include M. A. Lieberman, Dennis W. Hess, R. Grónsky, Anna Lichtenberg, Roland Kröger, M. Eizenberg, Xueyu Qian, Norimitsu Yoshida, N.W. Cheung and I.G. Brown. Their work appears in journals such as Journal of Applied Physics, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, Microelectronic Engineering, Journal of The Electrochemical Society and Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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