Stéphane Azzopardi

1.2k total citations
64 papers, 754 citations indexed

About

Stéphane Azzopardi is a scholar working on Electrical and Electronic Engineering, Mechanical Engineering and Automotive Engineering. According to data from OpenAlex, Stéphane Azzopardi has authored 64 papers receiving a total of 754 indexed citations (citations by other indexed papers that have themselves been cited), including 55 papers in Electrical and Electronic Engineering, 11 papers in Mechanical Engineering and 10 papers in Automotive Engineering. Recurrent topics in Stéphane Azzopardi's work include Silicon Carbide Semiconductor Technologies (41 papers), Semiconductor materials and devices (16 papers) and Electronic Packaging and Soldering Technologies (13 papers). Stéphane Azzopardi is often cited by papers focused on Silicon Carbide Semiconductor Technologies (41 papers), Semiconductor materials and devices (16 papers) and Electronic Packaging and Soldering Technologies (13 papers). Stéphane Azzopardi collaborates with scholars based in France, Canada and Japan. Stéphane Azzopardi's co-authors include Eric Woirgard, Olivier Briat, E. Woirgard, Jean-Michel Vinassa, Cyril Buttay, Jean-Michel Vinassa, Jianfeng Li, C. Mark Johnson, Serge Bontemps and Régis Meuret and has published in prestigious journals such as SHILAP Revista de lepidopterología, Journal of Power Sources and IEEE Transactions on Power Electronics.

In The Last Decade

Stéphane Azzopardi

56 papers receiving 724 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Stéphane Azzopardi France 14 605 234 187 140 55 64 754
E. Woirgard France 11 391 0.6× 88 0.4× 253 1.4× 95 0.7× 61 1.1× 28 493
Pascal Bevilacqua France 12 698 1.2× 210 0.9× 52 0.3× 142 1.0× 52 0.9× 54 879
Chao Ding United States 12 247 0.4× 117 0.5× 80 0.4× 114 0.8× 31 0.6× 24 417
Johannes Kriegler Germany 15 476 0.8× 113 0.5× 314 1.7× 61 0.4× 15 0.3× 28 606
Pierre‐Olivier Jeannin France 17 729 1.2× 114 0.5× 46 0.2× 59 0.4× 57 1.0× 40 836
Jiang Ding China 12 239 0.4× 156 0.7× 87 0.5× 76 0.5× 37 0.7× 51 504
Ran He Japan 11 570 0.9× 36 0.2× 56 0.3× 61 0.4× 190 3.5× 31 619
Aaron Wade United Kingdom 9 409 0.7× 105 0.4× 293 1.6× 39 0.3× 6 0.1× 13 478
Zhenwei Li China 12 230 0.4× 79 0.3× 32 0.2× 118 0.8× 61 1.1× 44 414

Countries citing papers authored by Stéphane Azzopardi

Since Specialization
Citations

This map shows the geographic impact of Stéphane Azzopardi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Stéphane Azzopardi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Stéphane Azzopardi more than expected).

Fields of papers citing papers by Stéphane Azzopardi

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Stéphane Azzopardi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Stéphane Azzopardi. The network helps show where Stéphane Azzopardi may publish in the future.

Co-authorship network of co-authors of Stéphane Azzopardi

This figure shows the co-authorship network connecting the top 25 collaborators of Stéphane Azzopardi. A scholar is included among the top collaborators of Stéphane Azzopardi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Stéphane Azzopardi. Stéphane Azzopardi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Azzopardi, Stéphane, et al.. (2024). On-Line Digital Fine Monitoring of SiC MOSFET Gate-Oxide Health: A Dual-Channel Gate Driving Approach. SPIRE - Sciences Po Institutional REpository. 84–87.
2.
Morel, Hervé, et al.. (2024). Test Methodology for Short-Circuit Assessment and Safe Operation Identification for Power SiC MOSFETs. Energies. 17(21). 5476–5476. 1 indexed citations
3.
Richardeau, Frédéric, et al.. (2024). Gate Voltage Dip as a New Indicator for Online Health Monitoring of SiC MOSFETS. IEEE Transactions on Power Electronics. 40(1). 142–145.
4.
Khazaka, Rabih, Rachelle Hanna, Yvan Avenas, & Stéphane Azzopardi. (2024). Analysis of Power Modules Including Phase Change Materials in the Top Interconnection of Semiconductor Devices. SHILAP Revista de lepidopterología. 5(4). 204–220.
5.
Trémouilles, David, et al.. (2023). New reliability model for power SiC MOSFET technologies under static and dynamic gate stress. Microelectronics Reliability. 150. 115190–115190. 2 indexed citations
6.
Richardeau, Frédéric, et al.. (2023). SiC power MOSFET overload detection, short-circuit protection and gate-oxide integrity monitoring using a switched resistors dual-channel gate-driver. Microelectronics Reliability. 150. 115082–115082. 1 indexed citations
7.
Khazaka, Rabih, et al.. (2023). Effect of Large Amplitude Thermal Cycles on Power Assemblies Based on Ceramic Heat Sink and Multilayer Pressureless Silver Sintering. IEEE Transactions on Device and Materials Reliability. 23(2). 211–218. 2 indexed citations
8.
Cougo, Bernardo, et al.. (2023). New Methodology for Defining Integration Limits Used for Switching Energy Computation in Power Devices. SPIRE - Sciences Po Institutional REpository. 1–8.
9.
Khazaka, Rabih, et al.. (2021). Thermal aging of power module assemblies based on ceramic heat sink and multilayers pressureless silver sintering. Microelectronics Reliability. 126. 114206–114206. 5 indexed citations
10.
Richardeau, Frédéric, et al.. (2021). Towards a safe failure mode under short-circuit operation of power SiC MOSFET using optimal gate source voltage depolarization. Microelectronics Reliability. 126. 114258–114258. 6 indexed citations
11.
Khazaka, Rabih, et al.. (2019). Rapid and Localized Soldering Using Reactive Films for Electronic Applications. Journal of Microelectronics and Electronic Packaging. 16(4). 182–187. 1 indexed citations
12.
Nguyen, Tien Anh, et al.. (2018). Investigation on Reliability of SiC MOSFET Under Long-Term Extreme Operating Conditions. 1–8. 2 indexed citations
13.
Khazaka, Rabih, et al.. (2018). Joining Using Reactive Films for Electronic Applications: Impact of Applied Pressure and Assembled Materials Properties on the Joint Initial Quality. Journal of Electronic Materials. 47(12). 7053–7061. 3 indexed citations
14.
Azzopardi, Stéphane, et al.. (2013). Electrical characterization under mechanical stress at various temperatures of PiN power diodes in a health monitoring approach. Microelectronics Reliability. 53(9-11). 1719–1724.
15.
Azzopardi, Stéphane, et al.. (2009). Uni-axial mechanical stress effect on Trench Punch through IGBT under short-circuit operation. Microelectronics Reliability. 49(9-11). 1398–1403. 2 indexed citations
16.
Debéda, Hélène, et al.. (2009). Evaluation of insulated gate bipolar transistor protection with ZnO thick films varistors. IET Power Electronics. 3(1). 1–10. 6 indexed citations
17.
18.
Briat, Olivier, et al.. (2007). Principle, design and experimental validation of a flywheel-battery hybrid source for heavy-duty electric vehicles. IET Electric Power Applications. 1(5). 665–674. 40 indexed citations
19.
Vinassa, Jean-Michel, et al.. (2004). Ultracapacitors modeling improvement using an experimental characterization based on step and frequency responses. 2004 IEEE 35th Annual Power Electronics Specialists Conference (IEEE Cat. No.04CH37551). 131–134. 12 indexed citations
20.
Azzopardi, Stéphane, Atsuo Kawamura, & H. Iwamoto. (2002). Switching performances of 1200 V conventional planar and trench punch-through IGBTs for clamped inductive load under extensive measurements. 1. 64–69. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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