Jitsuo Ohta

2.8k total citations
140 papers, 2.5k citations indexed

About

Jitsuo Ohta is a scholar working on Condensed Matter Physics, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Jitsuo Ohta has authored 140 papers receiving a total of 2.5k indexed citations (citations by other indexed papers that have themselves been cited), including 129 papers in Condensed Matter Physics, 88 papers in Materials Chemistry and 70 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Jitsuo Ohta's work include GaN-based semiconductor devices and materials (129 papers), ZnO doping and properties (82 papers) and Ga2O3 and related materials (68 papers). Jitsuo Ohta is often cited by papers focused on GaN-based semiconductor devices and materials (129 papers), ZnO doping and properties (82 papers) and Ga2O3 and related materials (68 papers). Jitsuo Ohta collaborates with scholars based in Japan. Jitsuo Ohta's co-authors include Hiroshi Fujioka, Atsushi Kobayashi, M. Oshima, Kohei Ueno, Masaharu Oshima, Hiroyuki Takahashi, Yuji Kawaguchi, Yasuaki Arakawa, Shin‐ichi Ito and Akira Ishii and has published in prestigious journals such as Journal of Biological Chemistry, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Jitsuo Ohta

139 papers receiving 2.4k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Jitsuo Ohta Japan 26 2.0k 1.5k 1.2k 716 599 140 2.5k
Rafael Dalmau United States 28 2.1k 1.0× 859 0.6× 1.1k 1.0× 580 0.8× 878 1.5× 73 2.4k
S. Figge Germany 22 2.1k 1.0× 1.2k 0.8× 1.0k 0.9× 674 0.9× 735 1.2× 115 2.4k
Sergio Fernández‐Garrido Germany 28 2.1k 1.0× 1.3k 0.9× 1.3k 1.1× 345 0.5× 590 1.0× 80 2.4k
Zachary Bryan United States 29 2.0k 1.0× 840 0.6× 1.2k 1.0× 390 0.5× 827 1.4× 49 2.2k
A. Diez Germany 26 1.6k 0.8× 785 0.5× 897 0.8× 626 0.9× 783 1.3× 39 1.9k
E. Iliopoulos Greece 27 1.5k 0.7× 819 0.6× 823 0.7× 351 0.5× 622 1.0× 86 1.9k
Haruo Sunakawa Japan 17 2.0k 1.0× 1.1k 0.7× 858 0.7× 605 0.8× 782 1.3× 36 2.3k
Kazuyuki Tadatomo Japan 19 1.8k 0.9× 944 0.6× 819 0.7× 388 0.5× 694 1.2× 122 2.0k
Narihito Okada Japan 21 1.6k 0.8× 775 0.5× 786 0.7× 538 0.8× 437 0.7× 119 1.8k
Shunro Fuke Japan 22 1.3k 0.6× 1.2k 0.8× 977 0.8× 254 0.4× 902 1.5× 75 2.1k

Countries citing papers authored by Jitsuo Ohta

Since Specialization
Citations

This map shows the geographic impact of Jitsuo Ohta's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Jitsuo Ohta with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Jitsuo Ohta more than expected).

Fields of papers citing papers by Jitsuo Ohta

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Jitsuo Ohta. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Jitsuo Ohta. The network helps show where Jitsuo Ohta may publish in the future.

Co-authorship network of co-authors of Jitsuo Ohta

This figure shows the co-authorship network connecting the top 25 collaborators of Jitsuo Ohta. A scholar is included among the top collaborators of Jitsuo Ohta based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Jitsuo Ohta. Jitsuo Ohta is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Kobayashi, Atsushi, et al.. (2019). AlN/InAlN thin-film transistors fabricated on glass substrates at room temperature. Scientific Reports. 9(1). 6254–6254. 4 indexed citations
2.
Sakurai, Yuya, Kohei Ueno, Atsushi Kobayashi, et al.. (2018). Growth of Si-doped AlN on sapphire (0001) via pulsed sputtering. APL Materials. 6(11). 9 indexed citations
3.
Arakawa, Yasuaki, et al.. (2017). Low-temperature pulsed sputtering growth of InGaN multiple quantum wells for photovoltaic devices. Japanese Journal of Applied Physics. 56(3). 31002–31002. 7 indexed citations
4.
Kim, Hyeryun, Jitsuo Ohta, Kohei Ueno, et al.. (2017). Fabrication of full-color GaN-based light-emitting diodes on nearly lattice-matched flexible metal foils. Scientific Reports. 7(1). 2112–2112. 23 indexed citations
5.
Kobayashi, Atsushi, Jitsuo Ohta, & Hiroshi Fujioka. (2017). Pulsed sputtering epitaxial growth of m-plane InGaN lattice-matched to ZnO. Scientific Reports. 7(1). 12820–12820. 9 indexed citations
6.
Itoh, Takeki, Atsushi Kobayashi, Kohei Ueno, Jitsuo Ohta, & Hiroshi Fujioka. (2016). Fabrication of InGaN thin-film transistors using pulsed sputtering deposition. Scientific Reports. 6(1). 29500–29500. 15 indexed citations
7.
Kobayashi, Atsushi, et al.. (2014). Field-effect transistors based on cubic indium nitride. Scientific Reports. 4(1). 3951–3951. 35 indexed citations
8.
Ohta, Jitsuo, et al.. (2014). Fabrication of full-color InGaN-based light-emitting diodes on amorphous substrates by pulsed sputtering. Scientific Reports. 4(1). 5325–5325. 111 indexed citations
9.
Ueno, Kohei, et al.. (2013). Effect of growth stoichiometry on the structural properties of AlN films on thermally nitrided sapphire $(11\bar 20)$. physica status solidi (RRL) - Rapid Research Letters. 8(3). 256–259. 12 indexed citations
10.
Kobayashi, Atsushi, Kohei Ueno, Jitsuo Ohta, Masaharu Oshima, & Hiroshi Fujioka. (2013). Atomic scattering spectroscopy for determination of the polarity of semipolar AlN grown on ZnO. Applied Physics Letters. 103(19). 5 indexed citations
11.
Kobayashi, Atsushi, Tsuyoshi Ohnishi, Mikk Lippmaa, et al.. (2011). Polarity replication across m-plane GaN/ZnO interfaces. Applied Physics Letters. 99(18). 3 indexed citations
12.
Liu, Jiangwei, Atsushi Kobayashi, Kohei Ueno, et al.. (2010). Electronic structures of c-plane and a-plane AlN/ZnO heterointerfaces determined by synchrotron radiation photoemission spectroscopy. Applied Physics Letters. 97(25). 12 indexed citations
13.
Kobayashi, Atsushi, Kohei Ueno, Tomoaki Fujii, et al.. (2010). Room-Temperature Epitaxial Growth of High-Quality m-Plane InAlN Films on Nearly Lattice-Matched ZnO Substrates. Japanese Journal of Applied Physics. 49(7R). 70202–70202. 11 indexed citations
14.
Kobayashi, Atsushi, et al.. (2010). Optical polarization characteristics of m ‐plane InGaN films coherently grown on ZnO substrates. physica status solidi (RRL) - Rapid Research Letters. 4(8-9). 188–190. 2 indexed citations
15.
Ueno, Kohei, et al.. (2009). Room temperature growth of semipolar AlN (1$ \bar 1 $02) films on ZnO (1$ \bar 1 $02) substrates by pulsed laser deposition. physica status solidi (RRL) - Rapid Research Letters. 3(2-3). 58–60. 11 indexed citations
16.
Kobayashi, Atsushi, et al.. (2008). Growth and characterization of nonpolar and semipolar (Al,In,Ga) N films on ZnO substrates. IEICE technical report. Speech. 108(323). 17–20. 3 indexed citations
17.
Kobayashi, Atsushi, Satoshi Kawano, Yuji Kawaguchi, Jitsuo Ohta, & Hiroshi Fujioka. (2007). Room temperature epitaxial growth of m-plane GaN on lattice-matched ZnO substrates. Applied Physics Letters. 90(4). 63 indexed citations
18.
Ueno, Kohei, et al.. (2007). Epitaxial growth of nonpolar AlN films on ZnO substrates using room temperature grown GaN buffer layers. Applied Physics Letters. 91(8). 24 indexed citations
19.
Kim, Myung‐Hee Y., Jitsuo Ohta, Atsushi Kobayashi, Hiroshi Fujioka, & Masaharu Oshima. (2007). Low‐temperature growth of high quality AlN films on carbon face 6H‐SiC. physica status solidi (RRL) - Rapid Research Letters. 2(1). 13–15. 13 indexed citations
20.
Takahashi, Hidenori, Jitsuo Ohta, Hiroshi Fujioka, M. Oshima, & Masao Kimura. (2002). G-GIXD characterization of GaN grown by laser MBE. Journal of Crystal Growth. 237-239. 1158–1162. 12 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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