H.C. de Graaff

2.9k total citations · 1 hit paper
62 papers, 2.0k citations indexed

About

H.C. de Graaff is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, H.C. de Graaff has authored 62 papers receiving a total of 2.0k indexed citations (citations by other indexed papers that have themselves been cited), including 56 papers in Electrical and Electronic Engineering, 10 papers in Atomic and Molecular Physics, and Optics and 5 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in H.C. de Graaff's work include Advancements in Semiconductor Devices and Circuit Design (37 papers), Semiconductor materials and devices (20 papers) and Silicon Carbide Semiconductor Technologies (14 papers). H.C. de Graaff is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (37 papers), Semiconductor materials and devices (20 papers) and Silicon Carbide Semiconductor Technologies (14 papers). H.C. de Graaff collaborates with scholars based in Netherlands, Finland and United States. H.C. de Graaff's co-authors include J.W. Slotboom, J.G. de Groot, W.J. Kloosterman, D.B.M. Klaassen, F.M. Klaassen, G.A.M. Hurkx, L.C.N. de Vreede, A. Schmitz, J.L. Tauritz and Mark P. van der Heijden and has published in prestigious journals such as Journal of Applied Physics, IEEE Journal of Solid-State Circuits and IEEE Transactions on Microwave Theory and Techniques.

In The Last Decade

H.C. de Graaff

61 papers receiving 1.9k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Measurements of bandgap narrowing in Si bipolar transistors

1976 567 citations J.W. Slotboom, H.C. de Graaff profile →

Peers

H.C. de Graaff

EEE

AMPO

MC

BE

CMP

Nobuyuki Sano Japan

R.E. Thomas Canada

D. J. Bartelink United States

R.C. Eden United States

D.M. Caughey Canada

Sei-ichi Itabashi Japan

M. Weiner United States

M. A. McCord United States

M.H. MacDougal United States

Duu Sheng Ong Malaysia

Nobuyuki Sano Japan

H.C. de Graaff

1.7k ×0.9

EEE

780 ×1.4

AMPO

445 ×1.8

MC

239 ×1.5

BE

97 ×1.7

CMP

Citations per year, relative to H.C. de Graaff H.C. de Graaff (= 1×) peers Nobuyuki Sano

Countries citing papers authored by H.C. de Graaff

Since Specialization

Citations

This map shows the geographic impact of H.C. de Graaff's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H.C. de Graaff with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H.C. de Graaff more than expected).

Fields of papers citing papers by H.C. de Graaff

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H.C. de Graaff. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H.C. de Graaff. The network helps show where H.C. de Graaff may publish in the future.

Co-authorship network of co-authors of H.C. de Graaff

This figure shows the co-authorship network connecting the top 25 collaborators of H.C. de Graaff. A scholar is included among the top collaborators of H.C. de Graaff based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H.C. de Graaff. H.C. de Graaff is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

1.

Neo, Wah-Peng, L.C.N. de Vreede, H.C. de Graaff, et al.. (2004). A new extraction technique for the series resistances of semiconductor devices based on the intrinsic properties of bias-dependent Y-parameters. 31. 148–151. 2 indexed citations

2.

Kloosterman, W.J. & H.C. de Graaff. (2003). Avalanche multiplication in a compact bipolar transistor model for circuit simulation. 28. 103–106. 3 indexed citations

3.

Heijden, Mark P. van der, H.C. de Graaff, L.C.N. de Vreede, John Gajadharsing, & Joachim N. Burghartz. (2002). Ultra-linear distributed class-AB LDMOS RF power amplifier for base stations. 2. 1363–1366. 3 indexed citations

4.

Mouthaan, Koen, et al.. (1999). Large Signal Modeling and Verification of Silicon RF Power Transistors. European Solid-State Device Research Conference. 1. 664–667.

5.

Vreede, L.C.N. de, et al.. (1998). Optimisation of the base-collector doping profile for high-frequency distortion. European Solid-State Device Research Conference. 496–499. 3 indexed citations

6.

Vreede, L.C.N. de, H.C. de Graaff, J.L. Tauritz, & Roel Baets. (1998). Extension of the collector charge description for compact bipolar epilayer models. IEEE Transactions on Electron Devices. 45(1). 277–285. 4 indexed citations

7.

Mouthaan, Koen, et al.. (1997). Thermal resistance modelling of RF high power bipolar transistors. European Solid-State Device Research Conference. 184–187. 3 indexed citations

8.

Graaff, H.C. de. (1997). State of the Art in Compact Modelling with Emphasis on Bipolar RF Circuit Design. European Solid-State Device Research Conference. 14–23. 4 indexed citations

9.

Vreede, L.C.N. de, et al.. (1997). MAIDS: A Microwave Active Integral Device Simulator. European Solid-State Device Research Conference. 180–183. 9 indexed citations

10.

Graaff, H.C. de, et al.. (1996). Comprehensive physical modeling of nmosfet hot-carrier-induced degradation. Microelectronics Reliability. 36(11-12). 1667–1670. 2 indexed citations

11.

Verhaege, K., et al.. (1995). Fast transient ESD simulation of the NMOS protection transistor. University of Twente Research Information. 307–310. 10 indexed citations

12.

Vreede, L.C.N. de, H.C. de Graaff, J.L. Tauritz, & Roel Baets. (1995). Extension of the collector charge description for compact bipolar epilayer models. Research Repository (Delft University of Technology). 63–66. 1 indexed citations

13.

Graaff, H.C. de, et al.. (1994). Analytical Calculation of Avalanche and Thermal Snapback Points in Bipolar Transistors. University of Twente Research Information. 433–436. 5 indexed citations

14.

Graaff, H.C. de, et al.. (1993). Empirical Modeling of Electromigration Early Resistance Changes. University of Twente Research Information. 3 indexed citations

15.

Graaff, H.C. de, et al.. (1993). Empirical Modeling of Electromigration Early Resistance Changes. MRS Proceedings. 309. 7 indexed citations

16.

Hurkx, G.A.M., et al.. (1990). A novel compact model description of reverse-biased diode characteristics including tunnelling. European Solid-State Device Research Conference. 49–52. 4 indexed citations

17.

Graaff, H.C. de & G.A.M. Hurkx. (1987). Physical modelling problems of ultrafast silicon bipolar transistors. European Solid-State Device Research Conference. 503–506. 2 indexed citations

18.

Graaff, H.C. de. (1986). Compact bipolar transistor modelling. 413–432. 2 indexed citations

19.

Slotboom, J.W. & H.C. de Graaff. (1975). Experimental determination of the bandgap in the base region of bipolar transistors. 21. 14–15. 1 indexed citations

20.

Graaff, H.C. de, et al.. (1972). Relationship between crossmodulation and intermodulation. Electronics Letters. 8(2). 33–34. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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