W.J. Kloosterman

718 total citations
21 papers, 447 citations indexed

About

W.J. Kloosterman is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Computer Networks and Communications. According to data from OpenAlex, W.J. Kloosterman has authored 21 papers receiving a total of 447 indexed citations (citations by other indexed papers that have themselves been cited), including 20 papers in Electrical and Electronic Engineering, 2 papers in Biomedical Engineering and 1 paper in Computer Networks and Communications. Recurrent topics in W.J. Kloosterman's work include Advancements in Semiconductor Devices and Circuit Design (19 papers), Silicon Carbide Semiconductor Technologies (9 papers) and Semiconductor materials and devices (8 papers). W.J. Kloosterman is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (19 papers), Silicon Carbide Semiconductor Technologies (9 papers) and Semiconductor materials and devices (8 papers). W.J. Kloosterman collaborates with scholars based in Netherlands, Finland and Ireland. W.J. Kloosterman's co-authors include H.C. de Graaff, G.A.M. Hurkx, A.C.T. Aarts, J.C.J. Paasschens, D.B.M. Klaassen, R.J. Havens, J.J.T.M. Donkers, J.W. Slotboom, David E. Terpstra and H.G.A. Huizing and has published in prestigious journals such as IEEE Journal of Solid-State Circuits, IEEE Transactions on Electron Devices and European Solid-State Device Research Conference.

In The Last Decade

W.J. Kloosterman

21 papers receiving 416 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
W.J. Kloosterman Netherlands 11 416 69 38 34 19 21 447
Neil Na Taiwan 10 232 0.6× 172 2.5× 61 1.6× 42 1.2× 11 0.6× 30 336
K. Aoyama Japan 10 295 0.7× 108 1.6× 26 0.7× 20 0.6× 5 0.3× 21 327
Haiwen Xu Singapore 10 266 0.6× 51 0.7× 34 0.9× 23 0.7× 5 0.3× 46 296
M.V. Grekov Russia 8 260 0.6× 136 2.0× 20 0.5× 8 0.2× 5 0.3× 21 303
A. J. Ritger United States 7 255 0.6× 48 0.7× 27 0.7× 6 0.2× 4 0.2× 21 316
Soon-Fatt Yoon Singapore 9 417 1.0× 204 3.0× 97 2.6× 36 1.1× 4 0.2× 23 439
P. Thiagarajan United States 10 284 0.7× 204 3.0× 27 0.7× 16 0.5× 3 0.2× 45 316
Sanna Ranta Finland 14 484 1.2× 386 5.6× 30 0.8× 26 0.8× 5 0.3× 44 534
N. Lagay France 9 293 0.7× 168 2.4× 19 0.5× 50 1.5× 1 0.1× 34 315

Countries citing papers authored by W.J. Kloosterman

Since Specialization
Citations

This map shows the geographic impact of W.J. Kloosterman's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by W.J. Kloosterman with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites W.J. Kloosterman more than expected).

Fields of papers citing papers by W.J. Kloosterman

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by W.J. Kloosterman. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by W.J. Kloosterman. The network helps show where W.J. Kloosterman may publish in the future.

Co-authorship network of co-authors of W.J. Kloosterman

This figure shows the co-authorship network connecting the top 25 collaborators of W.J. Kloosterman. A scholar is included among the top collaborators of W.J. Kloosterman based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with W.J. Kloosterman. W.J. Kloosterman is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Tiemeijer, L.F., et al.. (2014). Analysis of the local extraction method of base and thermal resistance of bipolar transistors. 215–218. 1 indexed citations
2.
Kloosterman, W.J., et al.. (2013). Local extraction of base and thermal resistance of bipolar transistors. 31. 21–24. 6 indexed citations
3.
Kloosterman, W.J., et al.. (2008). The Mextram Bipolar Transistor Model. 6(2). 191–7. 10 indexed citations
4.
Aarts, A.C.T. & W.J. Kloosterman. (2006). Compact modeling of high-voltage LDMOS devices including quasi-saturation. IEEE Transactions on Electron Devices. 53(4). 897–902. 63 indexed citations
5.
Kloosterman, W.J. & H.C. de Graaff. (2003). Avalanche multiplication in a compact bipolar transistor model for circuit simulation. 28. 103–106. 3 indexed citations
6.
Kloosterman, W.J., J.C.J. Paasschens, & D.B.M. Klaassen. (2003). Improved extraction of base and emitter resistance from small signal high frequency admittance measurements. 93–96. 34 indexed citations
7.
Graaff, H.C. de, et al.. (2003). Experience with the new compact MEXTRAM model for bipolar transistors. 246–249. 11 indexed citations
8.
Paasschens, J.C.J., W.J. Kloosterman, R.J. Havens, & H.C. de Graaff. (2002). Improved modeling of output conductance and cut-off frequency of bipolar transistors. 62–65. 2 indexed citations
9.
Kloosterman, W.J., J.C.J. Paasschens, & R.J. Havens. (2002). A comprehensive bipolar avalanche multiplication compact model for circuit simulation. 172–175. 11 indexed citations
10.
Kloosterman, W.J., et al.. (2002). Efficient parameter extraction for the MEXTRAM model. 70–73. 12 indexed citations
11.
Huizing, H.G.A., J.J.T.M. Donkers, J.H. Klootwijk, et al.. (2002). Explorations for high performance SiGe-heterojunction bipolar transistor integration. 30–33. 13 indexed citations
12.
Paasschens, J.C.J., W.J. Kloosterman, R.J. Havens, & H.C. de Graaff. (2001). Improved compact modeling of output conductance and cutoff frequency of bipolar transistors. IEEE Journal of Solid-State Circuits. 36(9). 1390–1398. 4 indexed citations
13.
Graaff, H.C. de & W.J. Kloosterman. (1995). Modeling of the collector epilayer of a bipolar transistor in the MEXTRAM model. IEEE Transactions on Electron Devices. 42(2). 274–282. 24 indexed citations
14.
Slotboom, J.W., M.J. van Dort, G.A.M. Hurkx, et al.. (1993). Physical Modelling and Simulation of Advanced Si-devices - An Industrial Approach. European Solid-State Device Research Conference. 327–334. 1 indexed citations
15.
Hurkx, G.A.M., et al.. (1992). A new analytical diode model including tunneling and avalanche breakdown. IEEE Transactions on Electron Devices. 39(9). 2090–2098. 155 indexed citations
16.
Biesen, J.J.H. van den, et al.. (1992). MODELLA-a new physics-based compact model for lateral p-n-p transistors. IEEE Transactions on Electron Devices. 39(11). 2553–2561. 6 indexed citations
17.
Hurkx, G.A.M., et al.. (1990). A novel compact model description of reverse-biased diode characteristics including tunnelling. European Solid-State Device Research Conference. 49–52. 4 indexed citations
18.
Kloosterman, W.J. & H.C. de Graaff. (1989). Avalanche multiplication in a compact bipolar transistor model for circuit simulation. IEEE Transactions on Electron Devices. 36(7). 1376–1380. 28 indexed citations
19.
20.
Graaff, H.C. de & W.J. Kloosterman. (1985). New formulation of the current and charge relations in bipolar transistor modeling for CACD purposes. IEEE Transactions on Electron Devices. 32(11). 2415–2419. 44 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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