F. van Rijs

609 total citations
36 papers, 468 citations indexed

About

F. van Rijs is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, F. van Rijs has authored 36 papers receiving a total of 468 indexed citations (citations by other indexed papers that have themselves been cited), including 36 papers in Electrical and Electronic Engineering, 9 papers in Condensed Matter Physics and 4 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in F. van Rijs's work include Radio Frequency Integrated Circuit Design (26 papers), Advanced Power Amplifier Design (21 papers) and Silicon Carbide Semiconductor Technologies (9 papers). F. van Rijs is often cited by papers focused on Radio Frequency Integrated Circuit Design (26 papers), Advanced Power Amplifier Design (21 papers) and Silicon Carbide Semiconductor Technologies (9 papers). F. van Rijs collaborates with scholars based in Netherlands, Germany and Sweden. F. van Rijs's co-authors include L.C.N. de Vreede, Jawad Qureshi, Marco Spirito, Mustafa Açar, Mark P. van der Heijden, Rui Hou, Jurriaan Schmitz, K. Reimann, R.J.E. Hueting and M. Pelk and has published in prestigious journals such as IEEE Transactions on Microwave Theory and Techniques, IEEE Transactions on Electron Devices and IEEE Microwave and Wireless Components Letters.

In The Last Decade

F. van Rijs

36 papers receiving 437 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
F. van Rijs Netherlands 12 448 99 36 32 26 36 468
Rik Jos Sweden 14 560 1.3× 73 0.7× 43 1.2× 18 0.6× 30 1.2× 28 573
S. Sugitani Japan 13 408 0.9× 55 0.6× 78 2.2× 42 1.3× 17 0.7× 37 417
Cooper S. Levy United States 13 421 0.9× 45 0.5× 40 1.1× 43 1.3× 16 0.6× 21 447
K. Sakuno Japan 11 272 0.6× 74 0.7× 31 0.9× 37 1.2× 29 1.1× 36 297
Changsi Wang China 8 346 0.8× 293 3.0× 77 2.1× 23 0.7× 17 0.7× 15 367
Mattias Südow Sweden 10 390 0.9× 228 2.3× 65 1.8× 23 0.7× 18 0.7× 19 405
Jan-Erik Mueller Germany 10 335 0.7× 36 0.4× 37 1.0× 32 1.0× 7 0.3× 34 348
S. Jenei Belgium 10 468 1.0× 34 0.3× 25 0.7× 94 2.9× 28 1.1× 28 479
Rafael Cignani Italy 11 369 0.8× 275 2.8× 60 1.7× 14 0.4× 13 0.5× 38 385
M. Versleijen Netherlands 5 450 1.0× 54 0.5× 55 1.5× 42 1.3× 11 0.4× 12 463

Countries citing papers authored by F. van Rijs

Since Specialization
Citations

This map shows the geographic impact of F. van Rijs's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. van Rijs with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. van Rijs more than expected).

Fields of papers citing papers by F. van Rijs

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. van Rijs. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. van Rijs. The network helps show where F. van Rijs may publish in the future.

Co-authorship network of co-authors of F. van Rijs

This figure shows the co-authorship network connecting the top 25 collaborators of F. van Rijs. A scholar is included among the top collaborators of F. van Rijs based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with F. van Rijs. F. van Rijs is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Shen, Yiyu, et al.. (2022). A 39 W Fully Digital Wideband Inverted Doherty Transmitter. 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022. 979–982. 5 indexed citations
2.
Shen, Yiyu, R. Quay, M. Pelk, et al.. (2021). Efficiency and Linearity of Digital "Class-C Like" Transmitters. Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft). 1–4. 4 indexed citations
3.
Rijs, F. van, et al.. (2018). LDMOS Technology for Power Amplifiers Up to 12 GHz. 11 indexed citations
4.
Hou, Rui, et al.. (2016). Nonintrusive Near-Field Characterization of Spatially Distributed Effects in Large-Periphery High-Power GaN HEMTs. IEEE Transactions on Microwave Theory and Techniques. 64(11). 4048–4062. 12 indexed citations
5.
Qureshi, Jawad, et al.. (2014). A 700-W peak ultra-wideband broadcast Doherty amplifier. 1–4. 57 indexed citations
6.
Vreede, L.C.N. de, et al.. (2011). A compact 65W 1.7–2.3GHz class-E GaN power amplifier for base stations. European Microwave Conference. 1103–1106. 4 indexed citations
7.
Alavi, Morteza S., F. van Rijs, Mauro Marchetti, et al.. (2011). Efficient LDMOS device operation for envelope tracking amplifiers through second harmonic manipulation. 2011 IEEE MTT-S International Microwave Symposium. 1–4. 6 indexed citations
8.
Waltereit, Patrick, W. Bronner, R. Quay, et al.. (2009). GaN HEMT and MMIC development at Fraunhofer IAF: performance and reliability. physica status solidi (a). 206(6). 1215–1220. 26 indexed citations
9.
Waltereit, Patrick, W. Bronner, R. Quay, et al.. (2008). High-efficiency, high-breakdown AlGaN/GaN HEMTs with lifetimes beyond 20 years. Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft). 272. 133–134. 1 indexed citations
10.
Quay, R., F. van Raay, Jutta Kühn, et al.. (2008). Efficient AlGaN/GaN HEMT Power Amplifiers. Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft). 87–90. 8 indexed citations
11.
12.
Wel, P.J. van der, et al.. (2006). Wear out failure mechanisms in aluminium and gold based LDMOS RF power applications. Microelectronics Reliability. 46(8). 1279–1284. 4 indexed citations
13.
Spirito, Marco, et al.. (2006). Active Harmonic Load–Pull for On-Wafer Out-of-Band Device Linearity Optimization. IEEE Transactions on Microwave Theory and Techniques. 54(12). 4225–4236. 27 indexed citations
14.
Rijs, F. van, et al.. (2002). Influence of output impedance on power added efficiency of Si-bipolar power transistors. 3. 1945–1948. 13 indexed citations
15.
16.
Huizing, H.G.A., et al.. (2002). Large signal RF behaviour of low supply voltage (>3.5 V) bipolar junction transistors. 82–85. 2 indexed citations
17.
18.
Slotboom, J.W., et al.. (1999). Base current kink effect in SiGe HBT's. European Solid-State Device Research Conference. 1. 716–719. 2 indexed citations
19.
Slotboom, J.W., M.J. van Dort, G.A.M. Hurkx, et al.. (1993). Physical Modelling and Simulation of Advanced Si-devices - An Industrial Approach. European Solid-State Device Research Conference. 327–334. 1 indexed citations
20.
Rijs, F. van, et al.. (1993). Permeable Base Transistors with Schottky and junction Gates. 125–128. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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