H.G.A. Huizing

711 total citations
21 papers, 559 citations indexed

About

H.G.A. Huizing is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Computational Mechanics. According to data from OpenAlex, H.G.A. Huizing has authored 21 papers receiving a total of 559 indexed citations (citations by other indexed papers that have themselves been cited), including 21 papers in Electrical and Electronic Engineering, 11 papers in Atomic and Molecular Physics, and Optics and 4 papers in Computational Mechanics. Recurrent topics in H.G.A. Huizing's work include Radio Frequency Integrated Circuit Design (8 papers), Silicon and Solar Cell Technologies (7 papers) and Semiconductor materials and interfaces (6 papers). H.G.A. Huizing is often cited by papers focused on Radio Frequency Integrated Circuit Design (8 papers), Silicon and Solar Cell Technologies (7 papers) and Semiconductor materials and interfaces (6 papers). H.G.A. Huizing collaborates with scholars based in Netherlands, Belgium and United States. H.G.A. Huizing's co-authors include P.A. Stolk, N. E. B. Cowern, J. G. M. van Berkum, Giovanni Mannino, M. Jaraı́z, F. Cristiano, F. Roozeboom, A. Claverie, Jurriaan Schmitz and Peter G. Steeneken and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms.

In The Last Decade

H.G.A. Huizing

21 papers receiving 542 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
H.G.A. Huizing Netherlands 11 542 270 102 75 62 21 559
P. Negrini Italy 12 407 0.8× 213 0.8× 69 0.7× 93 1.2× 40 0.6× 24 441
P.M. Garone United States 9 410 0.8× 187 0.7× 19 0.2× 93 1.2× 75 1.2× 18 439
M. J. Daniel Esser South Africa 12 385 0.7× 296 1.1× 77 0.8× 46 0.6× 37 0.6× 48 465
Masaru Kanamori Japan 10 464 0.9× 153 0.6× 41 0.4× 226 3.0× 57 0.9× 25 496
W. Rausch United States 10 420 0.8× 183 0.7× 78 0.8× 40 0.5× 27 0.4× 27 438
M. Doken Japan 6 450 0.8× 69 0.3× 71 0.7× 102 1.4× 59 1.0× 11 470
K. Ohyu Japan 15 562 1.0× 108 0.4× 112 1.1× 81 1.1× 18 0.3× 36 601
Mark E. Greiner United States 7 280 0.5× 220 0.8× 58 0.6× 34 0.5× 31 0.5× 15 319
L. Tosti France 15 773 1.4× 60 0.2× 29 0.3× 62 0.8× 87 1.4× 32 805

Countries citing papers authored by H.G.A. Huizing

Since Specialization
Citations

This map shows the geographic impact of H.G.A. Huizing's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H.G.A. Huizing with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H.G.A. Huizing more than expected).

Fields of papers citing papers by H.G.A. Huizing

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H.G.A. Huizing. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H.G.A. Huizing. The network helps show where H.G.A. Huizing may publish in the future.

Co-authorship network of co-authors of H.G.A. Huizing

This figure shows the co-authorship network connecting the top 25 collaborators of H.G.A. Huizing. A scholar is included among the top collaborators of H.G.A. Huizing based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H.G.A. Huizing. H.G.A. Huizing is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Klaassen, D.B.M., Hans Mertens, J.J.T.M. Donkers, et al.. (2011). Virtual technology for RF process and device development. 20. 37–44. 2 indexed citations
2.
Herfst, R.W., Peter G. Steeneken, H.G.A. Huizing, & Jurriaan Schmitz. (2008). Center-Shift Method for the Characterization of Dielectric Charging in RF MEMS Capacitive Switches. IEEE Transactions on Semiconductor Manufacturing. 21(2). 148–153. 30 indexed citations
3.
Herfst, R.W., H.G.A. Huizing, Peter G. Steeneken, & Jurriaan Schmitz. (2006). Characterization of dielectric charging in RF MEMS capacitive switches. University of Twente Research Information. 133–136. 54 indexed citations
4.
Herfst, R.W., H.G.A. Huizing, Peter G. Steeneken, & Jurriaan Schmitz. (2005). Characterization of dielectric charging in RF MEMS. University of Twente Research Information. 11–14. 2 indexed citations
5.
Agarwal, P., et al.. (2004). The influence of parasitic resistances on the f/sub T/-optimisation of high-speed SiGe-HBTs. 291–294. 3 indexed citations
6.
Rodríguez, Á., Wiebe de Boer, Haitao Sun, et al.. (2004). QUBiC4X: An f/sub T//f/sub max/ = 130/140GHz SiGe:C-BiCMOS manufacturing technology witg elite passives for emerging microwave applications. 233–236. 29 indexed citations
7.
8.
Brown, Adam R., G.A.M. Hurkx, H.G.A. Huizing, et al.. (2002). SiGe fast-switching power diodes. 32. 699–702. 5 indexed citations
9.
Rijs, F. van, et al.. (2002). Influence of output impedance on power added efficiency of Si-bipolar power transistors. 3. 1945–1948. 13 indexed citations
10.
11.
Huizing, H.G.A., et al.. (2002). Large signal RF behaviour of low supply voltage (>3.5 V) bipolar junction transistors. 82–85. 2 indexed citations
12.
Huizing, H.G.A., et al.. (2002). Base current tuning in SiGe HBT's by SiGe in the emitter. 40.5.1–40.5.4. 8 indexed citations
13.
14.
Huizing, H.G.A., J.J.T.M. Donkers, J.H. Klootwijk, et al.. (2002). Explorations for high performance SiGe-heterojunction bipolar transistor integration. 30–33. 13 indexed citations
15.
Mannino, Giovanni, P.A. Stolk, F. Roozeboom, et al.. (1999). Ostwald Ripening of {113} Defects Precursors and Transient Enhanced Diffusion. MRS Proceedings. 568. 3 indexed citations
16.
Cowern, N. E. B., Giovanni Mannino, P.A. Stolk, et al.. (1999). Energetics of Self-Interstitial Clusters in Si. Physical Review Letters. 82(22). 4460–4463. 262 indexed citations
17.
Cowern, N. E. B., Giovanni Mannino, P.A. Stolk, et al.. (1999). Cluster ripening and transient enhanced diffusion in silicon. Materials Science in Semiconductor Processing. 2(4). 369–376. 12 indexed citations
18.
Larsen, K. Kyllesbech, V. Privitera, J. G. M. van Berkum, et al.. (1997). The Effect of Oxygen on The Electrical Activation and Diffusion of Ion-Implanted Boron. MRS Proceedings. 469. 4 indexed citations
19.
Cowern, N. E. B., E. J. H. Collart, J. G. M. van Berkum, et al.. (1997). Low Energy Implantation and Transient Enhanced Diffusion: Physical Mechanisms and Technology Implications. MRS Proceedings. 469. 14 indexed citations
20.
Huizing, H.G.A., et al.. (1996). Ultrafast interstitial injection during transient enhanced diffusion of boron in silicon. Applied Physics Letters. 69(9). 1211–1213. 34 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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