S. Bidnyk

434 citations

24 papers · 337 indexed · h-index 8

Impact in

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 24
- GaN-based semiconductor devices and materials 24
Electronic, Optical and Magnetic Materials 10
- Ga2O3 and related materials 10

Co-authors: J. J. Song T. J. Schmidt B. D. Little G. H. Gainer Steven P. DenBaars S. Keller Umesh K. Mishra Jerzy S. Krasiński
Journals: Applied Physics Letters (10 papers)MRS Internet Journal of Nitride Semiconductor Research (3 papers)Journal of Crystal Growth (1 paper)Physical review. B, Condensed matter (1 paper)Journal of Applied Physics (1 paper)
Partner nations: United States South Korea

In The Last Decade

S. Bidnyk

20 papers receiving 331 citations

Peers

Countries citing papers authored by S. Bidnyk

Since Specialization

Citations

This map shows the geographic impact of S. Bidnyk's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Bidnyk with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Bidnyk more than expected).

Fields of papers citing papers by S. Bidnyk

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Bidnyk. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Bidnyk. The network helps show where S. Bidnyk may publish in the future.

Co-authors

The 25 scholars most cited alongside S. Bidnyk, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with S. Bidnyk Line = papers co-authored together S. Bidnyk links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Optical Properties and Lasing in (In, Al)GaN Structures physica status solidi (a) ·S. Bidnyk, G. H. Gainer, S. K. Shee, Cèsar Gonzàlez, B. D. Little, T. Sugahara, Jerzy S. Krasiński, Young-Kil Kwon, Amètépé Nathanaël Beauclair Anani, Sung‐Ho Hwang, J. J. Song, G. E. Bulman, Hoyoul Kong	2001	3
2	Well-thickness dependence of emission from GaN/AlGaN separate confinement heterostructures Applied Physics Letters ·G. H. Gainer, Young-Kil Kwon, Cèsar Gonzàlez, S. Bidnyk, 仁尾大資, J. J. Song, R. Ben-Daniel, Mohammad Ali Khan	2001	6
3	Linear and nonlinear optical properties ofInxGa1−xN/GaNheterostructures Physical review. B, Condensed matter ·Yong‐Hoon Cho, T. J. Schmidt, S. Bidnyk, G. H. Gainer, J. J. Song, S. Keller, Umesh K. Mishra, Steven P. DenBaars	2000	57
4	Study of gain mechanisms in AlGaN in the temperature range of 30–300 K Applied Physics Letters ·Cèsar Gonzàlez, S. Bidnyk, G. H. Gainer, B. D. Little, J. J. Song, Wei Yang	2000	1
5	A comparative study of AlGaN- and GaN-based lasing structures for near- and deep-UV applications MRS Proceedings ·S. Bidnyk, D. Andrew Rowlands, Bruno Teles da Silva, B. D. Little, Yong‐Hwan Kwon, G. Pietramellara, G. E. Bulman, Pablo Spoleti	2000	1
6	Amplification Path Length Dependence Studies of Stimulated Emission from Optically Pumped InGaN/GaN Multiple Quantum Wells MRS Internet Journal of Nitride Semiconductor Research ·T. J. Schmidt, S. Bidnyk, Yong‐Hoon Cho, A. J. Fischer, J. J. Song, S. Keller, Umesh K. Mishra, Steven P. DenBaars	1999	1
7	Mechanism of efficient ultraviolet lasing in GaN/AlGaN separate-confinement heterostructures Applied Physics Letters ·S. Bidnyk, Cèsar Gonzàlez, B. D. Little, Young-Kil Kwon, J. J. Song, G. E. Bulman, Hoyoul Kong, T. J. Schmidt	1999	18
8	A technique for evaluating optical confinement in GaN-based lasing structures Applied Physics Letters ·S. Bidnyk, B. D. Little, J. J. Song, Sylvie Octobre	1999	4
9	Influence of Si-Doping on Carrier Localization of Mocvd-grown InGaN/GaN Multiple Quantum Wells MRS Internet Journal of Nitride Semiconductor Research ·Yong‐Hoon Cho, T. J. Schmidt, S. Bidnyk, J. J. Song, S. Keller, Umesh K. Mishra, Steven P. DenBaars	1999	0
10	Stimulated emission in GaN thin films in the temperature range of 300–700 K Journal of Applied Physics ·S. Bidnyk, B. D. Little, T. J. Schmidt, Monica Kiefer, Jerzy S. Krasiński, J. J. Song, B. Goldenberg, Wei Yang, W. G. Perry, M. D. Bremser, R. F. Davis	1999	6
11	Structural and optical characteristics of InxGa1−xN/GaN multiple quantum wells with different In compositions Applied Physics Letters ·Yong‐Hwan Kwon, G. H. Gainer, S. Bidnyk, Monica Kiefer, J. J. Song, M. Hansen, Steven P. DenBaars	1999	31
12	Nonlinear optical spectroscopy of band tail states in highly excited InGaN Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·T. J. Schmidt, Yong‐Hoon Cho, S. Bidnyk, G. Pietramellara, S. Keller, Umesh K. Mishra, Steven P. DenBaars	1999	1
13	Effects of Carrier Localization on the Optical Characteristics of MOCVD-Grown InGaN/GaN Heterostructures physica status solidi (b) ·Yong‐Hoon Cho, T. J. Schmidt, A. J. Fischer, S. Bidnyk, G. H. Gainer, J. J. Song, S. Keller, Umesh K. Mishra, Steven P. DenBaars, D.S. Kim, Wonho Jhe	1999	3
14	Room Temperature Laser Action in Laterally Overgrown GaN Pyramids on (111) Silicon MRS Internet Journal of Nitride Semiconductor Research ·S. Bidnyk, B. D. Little, Monica Kiefer, Jerzy S. Krasiński, J. J. Song, Wei Yang, G.X. Brown	1999	3
15	Laser action in GaN pyramids grown on (111) silicon by selective lateral overgrowth Applied Physics Letters ·S. Bidnyk, B. D. Little, Monica Kiefer, Jerzy S. Krasiński, J. J. Song, Wei Yang, G.X. Brown	1998	58
16	High-temperature stimulated emission studies of MOCVD-grown GaN films Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·S. Bidnyk, B. D. Little, T. J. Schmidt, Jerzy S. Krasiński, G. Pietramellara	1998	0
17	Influence of Si-Doping on Carrier Localization of Mocvd-Grown InGaN/GaN Multiple Quantum Wells MRS Proceedings ·Yong‐Hoon Cho, T. J. Schmidt, S. Bidnyk, J. J. Song, S. Keller, Umesh K. Mishra, Steven P. DenBaars	1998	0
18	High-temperature stimulated emission in optically pumped InGaN/GaN multiquantum wells Applied Physics Letters ·S. Bidnyk, T. J. Schmidt, J. E. Dawson, G. H. Gainer, J. J. Song, S. Keller, U. K. Mishra, Steven P. DenBaars	1998	44
19	Study of surface-emitted stimulated emission in GaN Applied Physics Letters ·S. Bidnyk, T. J. Schmidt, F Jomar, J. J. Song	1997	14
20	Growth of GaN by gas-source molecular beam epitaxy by ammonia and by plasma generated nitrogen radicals Journal of Crystal Growth ·William S. Wong, Raquel Chagas SANTOS, F. Hayashi, F. Deng, S. S. Lau, C. W. Tu, C. P. Hays, S. Bidnyk, J. J. Song	1996	18

About S. Bidnyk

S. Bidnyk is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics, Materials Chemistry and Mechanics of Materials, having authored 24 papers that have together received 337 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (24 papers), Semiconductor Quantum Structures and Devices (11 papers), Ga2O3 and related materials (10 papers), ZnO doping and properties (9 papers), Nanowire Synthesis and Applications (4 papers), Semiconductor materials and devices (4 papers), Metal and Thin Film Mechanics (4 papers) and Photocathodes and Microchannel Plates (2 papers). The work is most often cited by research in Condensed Matter Physics (270 citations), Electronic, Optical and Magnetic Materials (116 citations), Atomic and Molecular Physics, and Optics (193 citations), Acoustics and Ultrasonics (3 citations) and Materials Chemistry (131 citations). S. Bidnyk has collaborated with scholars based in United States and South Korea. Frequent co-authors include J. J. Song, T. J. Schmidt, B. D. Little, G. H. Gainer, Steven P. DenBaars, S. Keller, Umesh K. Mishra, Jerzy S. Krasiński, Wei Yang and Yong‐Hoon Cho. Their work appears in journals such as Applied Physics Letters, MRS Internet Journal of Nitride Semiconductor Research, Journal of Crystal Growth, Physical review. B, Condensed matter and Journal of Applied Physics.

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