R. S. Goldman

3.0k total citations
140 papers, 2.4k citations indexed

About

R. S. Goldman is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, R. S. Goldman has authored 140 papers receiving a total of 2.4k indexed citations (citations by other indexed papers that have themselves been cited), including 91 papers in Atomic and Molecular Physics, and Optics, 75 papers in Electrical and Electronic Engineering and 50 papers in Materials Chemistry. Recurrent topics in R. S. Goldman's work include Semiconductor Quantum Structures and Devices (75 papers), Semiconductor materials and devices (30 papers) and GaN-based semiconductor devices and materials (28 papers). R. S. Goldman is often cited by papers focused on Semiconductor Quantum Structures and Devices (75 papers), Semiconductor materials and devices (30 papers) and GaN-based semiconductor devices and materials (28 papers). R. S. Goldman collaborates with scholars based in United States, South Korea and Poland. R. S. Goldman's co-authors include D. T. Margulies, A. E. Berkowitz, Jingtao Li, F. E. Spada, Rodney Sinclair, F. T. Parker, K. L. Kavanagh, H. H. Wieder, P. Bhattacharya and R. M. Feenstra and has published in prestigious journals such as Physical Review Letters, Advanced Materials and Journal of Personality and Social Psychology.

In The Last Decade

R. S. Goldman

136 papers receiving 2.4k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
R. S. Goldman United States 26 1.4k 1.2k 1.1k 420 401 140 2.4k
Robert L. Park United States 31 1.4k 1.0× 722 0.6× 1.1k 1.0× 323 0.8× 317 0.8× 103 3.1k
J. W. Cook United States 28 1.1k 0.8× 1.5k 1.3× 1.5k 1.4× 630 1.5× 234 0.6× 136 3.0k
F. Grey Denmark 35 2.5k 1.8× 1.1k 1.0× 1.3k 1.2× 287 0.7× 879 2.2× 113 3.8k
Kazuo Tsutsui Japan 26 744 0.5× 2.0k 1.7× 1.3k 1.2× 446 1.1× 441 1.1× 336 3.0k
D. Ninno Italy 32 1.6k 1.1× 1.9k 1.6× 2.5k 2.3× 326 0.8× 711 1.8× 118 3.7k
Wolfgang Ernst Austria 39 4.3k 3.1× 497 0.4× 1.1k 1.1× 467 1.1× 237 0.6× 289 5.8k
K. R. Evans United States 29 1.5k 1.1× 1.6k 1.4× 1.0k 1.0× 1.5k 3.6× 366 0.9× 159 3.1k
José Ortega Spain 36 2.7k 1.9× 2.2k 1.9× 2.2k 2.0× 351 0.8× 733 1.8× 156 4.8k
J. K. Howard United States 35 2.7k 1.9× 968 0.8× 1.1k 1.0× 530 1.3× 324 0.8× 130 4.1k
Yann Girard France 23 890 0.6× 771 0.7× 997 0.9× 190 0.5× 248 0.6× 94 1.8k

Countries citing papers authored by R. S. Goldman

Since Specialization
Citations

This map shows the geographic impact of R. S. Goldman's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. S. Goldman with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. S. Goldman more than expected).

Fields of papers citing papers by R. S. Goldman

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. S. Goldman. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. S. Goldman. The network helps show where R. S. Goldman may publish in the future.

Co-authorship network of co-authors of R. S. Goldman

This figure shows the co-authorship network connecting the top 25 collaborators of R. S. Goldman. A scholar is included among the top collaborators of R. S. Goldman based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. S. Goldman. R. S. Goldman is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Cooper, Joshua J., et al.. (2025). Influence of heterovalent doping on tetrahedral N interstitial formation in dilute GaAsN alloys. Applied Physics Letters. 127(20).
2.
Subedi, Indra, Xiaobo Chen, Sooyeon Hwang, et al.. (2025). Formation and optical properties of indium nanoparticle arrays for deep-UV plasmonics. Applied Physics Letters. 127(3).
3.
Li, Meng, et al.. (2024). Influence of excess silicon on polytype selection during metal-mediated epitaxy of GaN nanowires. Applied Physics Letters. 125(4). 1 indexed citations
4.
Cooper, Joshua J., A. Novak, Liang Qi, et al.. (2024). Onset of tetrahedral interstitial formation in GaAsN alloys. Applied Physics Letters. 124(16). 2 indexed citations
5.
Teodoro, M. D., et al.. (2024). Influence of carrier localization on photoluminescence emission from sub-monolayer quantum dot layers. Applied Physics Letters. 125(12).
6.
Cooper, Joshua J., Joseph Casamento, R. S. Goldman, et al.. (2024). Lattice-matched multiple channel AlScN/GaN heterostructures. APL Materials. 12(10). 13 indexed citations
7.
Hammond, K., et al.. (2024). Influence of non-stoichiometry and local atomic environments on carrier transport in GaAs1−x−yNxBiy alloys. Applied Physics Letters. 124(15). 1 indexed citations
8.
Pavelescu, E.-M., Cosmin Romanițan, Alina Matei, et al.. (2024). Enhancement in photoluminescence from GaPAsN/GaP alloys by 6-MeV electrons irradiation and rapid thermal annealing. Optical Materials. 149. 115075–115075. 1 indexed citations
9.
Muhowski, Aaron J., Joshua J. Cooper, Fabián Naab, et al.. (2023). Influence of H on Sn incorporation in GeSnC alloys grown using molecular beam epitaxy. Journal of Applied Physics. 134(19). 5 indexed citations
10.
Muhowski, Aaron J., et al.. (2023). Why Room Temperature GeSn Lasers Need Carbon. 1–2. 1 indexed citations
11.
Thakur, Varun, et al.. (2023). Homologous Self‐Assembled Superlattices: What Causes their Periodic Polarity Switching?. SHILAP Revista de lepidopterología. 3(2). 1 indexed citations
12.
Marks, Leah, et al.. (2022). Writing-to-learn in introductory materials science and engineering. MRS Communications. 12(1). 1–11. 5 indexed citations
13.
Goldman, R. S., et al.. (2021). Freedom Should Be Free: An Interview With The Bail Project. CUNY Academic Works (City University of New York). 24(2). 6. 1 indexed citations
14.
Norman, Andrew G., et al.. (2018). Surfactant-induced chemical ordering of GaAsN:Bi. Applied Physics Letters. 113(21). 8 indexed citations
15.
Finkenstaedt-Quinn, Solaire A., et al.. (2017). Investigation of the Influence of a Writing-to-Learn Assignment on Student Understanding of Polymer Properties. Journal of Chemical Education. 94(11). 1610–1617. 40 indexed citations
16.
Sih, Vanessa, et al.. (2015). Influence of arsenic species on the growth and properties of GaAsBi alloys. Bulletin of the American Physical Society. 2015. 1 indexed citations
17.
Jeon, Sera, et al.. (2015). Formation and coarsening of near-surface Ga nanoparticles on SiNx. Applied Physics Letters. 106(24). 2 indexed citations
18.
Goldman, R. S., Amy Eguchi, & Elizabeth Sklar. (2004). Using educational robotics to engage inner-city students with technology. International Conference of Learning Sciences. 214–221. 37 indexed citations
19.
Goldman, R. S., et al.. (2004). Nanometer-scale studies of point defect distributions in GaMnAs alloys. Applied Physics Letters. 86(1). 11 indexed citations
20.
Rich, Daniel H., et al.. (1995). Influence of GaAs(001) substrate misorientation towards {111} on the optical properties of InxGa1−xAs/GaAs. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 13(4). 1766–1772. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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