Shiro Sakai

792 total citations
49 papers, 680 citations indexed

About

Shiro Sakai is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Shiro Sakai has authored 49 papers receiving a total of 680 indexed citations (citations by other indexed papers that have themselves been cited), including 34 papers in Condensed Matter Physics, 27 papers in Electrical and Electronic Engineering and 16 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Shiro Sakai's work include GaN-based semiconductor devices and materials (34 papers), Semiconductor Quantum Structures and Devices (16 papers) and Ga2O3 and related materials (11 papers). Shiro Sakai is often cited by papers focused on GaN-based semiconductor devices and materials (34 papers), Semiconductor Quantum Structures and Devices (16 papers) and Ga2O3 and related materials (11 papers). Shiro Sakai collaborates with scholars based in Japan, China and United States. Shiro Sakai's co-authors include Yoshiki Naoi, Masayoshi Umeno, Tomoya Sugahara, Masakazu Anpo, Masato Takeuchi, Tao Wang, Daisuke Nakagawa, H. Naoi, Maosheng Hao and Naoki Wada and has published in prestigious journals such as Applied Physics Letters, Applied Catalysis B: Environmental and Thin Solid Films.

In The Last Decade

Shiro Sakai

48 papers receiving 654 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Shiro Sakai Japan 15 352 318 290 240 138 49 680
James S. Kurtz United States 5 227 0.6× 195 0.6× 264 0.9× 370 1.5× 98 0.7× 5 678
Gufei Zhang China 17 239 0.7× 268 0.8× 214 0.7× 572 2.4× 291 2.1× 45 885
A. Yu. Nikiforov United States 16 297 0.8× 255 0.8× 110 0.4× 362 1.5× 209 1.5× 40 629
Kazuhide Kusakabe Japan 15 438 1.2× 180 0.6× 149 0.5× 330 1.4× 289 2.1× 42 603
А. В. Мудрый Belarus 16 236 0.7× 491 1.5× 272 0.9× 644 2.7× 176 1.3× 49 837
Hadj M. Benia Germany 17 180 0.5× 251 0.8× 442 1.5× 702 2.9× 69 0.5× 25 912
Dennis H. van Dorp Belgium 17 178 0.5× 533 1.7× 134 0.5× 389 1.6× 197 1.4× 53 794
J. Allègre France 18 428 1.2× 683 2.1× 749 2.6× 643 2.7× 219 1.6× 69 1.2k
D. Siche Germany 16 158 0.4× 507 1.6× 153 0.5× 305 1.3× 190 1.4× 64 719
P.A.A. van der Heijden Netherlands 15 233 0.7× 168 0.5× 725 2.5× 550 2.3× 484 3.5× 30 950

Countries citing papers authored by Shiro Sakai

Since Specialization
Citations

This map shows the geographic impact of Shiro Sakai's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Shiro Sakai with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Shiro Sakai more than expected).

Fields of papers citing papers by Shiro Sakai

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Shiro Sakai. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Shiro Sakai. The network helps show where Shiro Sakai may publish in the future.

Co-authorship network of co-authors of Shiro Sakai

This figure shows the co-authorship network connecting the top 25 collaborators of Shiro Sakai. A scholar is included among the top collaborators of Shiro Sakai based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Shiro Sakai. Shiro Sakai is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Muramoto, Yoshihiko, et al.. (2011). High‐efficiency UV LEDs and RGB white LEDs for lighting and LCD backlights. Journal of the Society for Information Display. 19(12). 907–912. 13 indexed citations
2.
Zhang, Jing, et al.. (2010). GaN surface nanostructure photodetector based on back side incidence. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 7(7-8). 1804–1806. 1 indexed citations
3.
Naoi, Yoshiki, et al.. (2010). GaN‐based light emitting diodes with periodic nano‐structures on the surface fabricated by nanoimprint lithography technique. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 7(7-8). 2154–2156. 3 indexed citations
4.
Sumiyoshi, Kazuhide, et al.. (2006). Al0.17Ga0.83N film with middle temperature-intermediate layer grown on trenched sapphire substrate by MOCVD. Journal of Crystal Growth. 298. 300–304. 1 indexed citations
5.
Naoi, Yoshiki, et al.. (2005). Interdiffusion induced In(Ga)NAs films growth on GaAs substrates by low-pressure metalorganic chemical vapor deposition. Journal of Crystal Growth. 282(1-2). 29–35. 1 indexed citations
6.
Nakamura, Akihiro, et al.. (2004). Surface Smoothing Mechanism of AlN Film by Initially Alternating Supply of Ammonia. Japanese Journal of Applied Physics. 43(8B). L1057–L1057. 15 indexed citations
7.
Nishino, Katsushi, Daigo Kikuta, & Shiro Sakai. (2002). Bulk GaN growth by direct synthesis method. Journal of Crystal Growth. 237-239. 922–925. 3 indexed citations
8.
Lee, Young-Bae, Tao Wang, Yuhuai Liu, et al.. (2002). Fabrication of High-Output-Power AlGaN/GaN-Based UV-Light-Emitting Diode Using a Ga Droplet Layer. Japanese Journal of Applied Physics. 41(10A). L1037–L1037. 7 indexed citations
9.
Li, Hongdong, Tao Wang, Yuhuai Liu, Jin‐Ping Ao, & Shiro Sakai. (2002). V-Shaped Defects in AlGaN/GaN Superlattices Grown on Thin Undoped-GaN Layers on Sapphire Substrate. Japanese Journal of Applied Physics. 41(Part 2, No. 6B). L732–L735. 2 indexed citations
10.
Lee, Young-Bae, Tao Wang, Yuhuai Liu, et al.. (2002). High-Performance 348 nm AlGaN/GaN-Based Ultraviolet-Light-Emitting Diode with a SiN Buffer Layer. Japanese Journal of Applied Physics. 41(Part 1, No. 7A). 4450–4453. 36 indexed citations
11.
Basak, Durga, Kenji Yamashita, Tomoya Sugahara, et al.. (1999). Selective Etching of GaN over AlxGa1-xN Using Reactive Ion Plasma of Cl2/CH4/Ar Gas Mixture. Japanese Journal of Applied Physics. 38(1R). 42–42. 7 indexed citations
12.
Basak, Durga, Kenji Yamashita, Tomoya Sugahara, et al.. (1999). Reactive Ion Etching of GaN and AlxGa1-xN Using Cl2/CH4/Ar Plasma. Japanese Journal of Applied Physics. 38(4S). 2646–2646. 17 indexed citations
13.
Eliseev, Petr G., Hong‐Bo Sun, Saulius Juodkazis, et al.. (1999). Laser-Induced Damage Threshold and Surface Processing of GaN at 400 nm Wavelength. Japanese Journal of Applied Physics. 38(7B). L839–L839. 16 indexed citations
14.
Naoi, H., Yoshiki Naoi, & Shiro Sakai. (1997). MOCVD growth of InAsN for infrared applications. Solid-State Electronics. 41(2). 319–321. 56 indexed citations
15.
Wada, Naoki, et al.. (1992). Stable Operation of AlGaAs/GaAs Light-Emitting Diodes Fabricated on Si Substrate. Japanese Journal of Applied Physics. 31(2A). L78–L78. 14 indexed citations
16.
Sakai, Shiro, et al.. (1988). Al0.3Ga0.7As/Al0.05Ga0.95As light-emitting diodes on GaAs-coated Si substrates grown by liquid phase epitaxy. Applied Physics Letters. 53(13). 1201–1203. 5 indexed citations
17.
Sakai, Shiro, et al.. (1986). MOCVD Growth of GaAs1-xPx (x=0-1) and Fabrication of GaAs0.6P0.4 LED on Si Substrate. Japanese Journal of Applied Physics. 25(9R). 1388–1388. 5 indexed citations
18.
Sakai, Shiro, et al.. (1985). AlGaAs/GaAs Wavelength-Dividing Photodiode with Multi-Layer Filters Grown by MOCVD. Japanese Journal of Applied Physics. 24(7R). 887–887. 1 indexed citations
19.
Shima, Akihiro, et al.. (1985). Visible InGaP/GaAsP Dual Wavelength Light Emitting Diodes. Japanese Journal of Applied Physics. 24(4A). L233–L233. 9 indexed citations
20.
Sakai, Shiro, et al.. (1979). A new InGaAsP/InP dual-wavelength LED. Applied Physics Letters. 35(8). 588–589. 16 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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