S. S. Park

1.2k total citations
36 papers, 1.0k citations indexed

About

S. S. Park is a scholar working on Condensed Matter Physics, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, S. S. Park has authored 36 papers receiving a total of 1.0k indexed citations (citations by other indexed papers that have themselves been cited), including 33 papers in Condensed Matter Physics, 21 papers in Materials Chemistry and 20 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in S. S. Park's work include GaN-based semiconductor devices and materials (33 papers), ZnO doping and properties (21 papers) and Ga2O3 and related materials (20 papers). S. S. Park is often cited by papers focused on GaN-based semiconductor devices and materials (33 papers), ZnO doping and properties (21 papers) and Ga2O3 and related materials (20 papers). S. S. Park collaborates with scholars based in South Korea, United States and Poland. S. S. Park's co-authors include Kiyoung Lee, M. A. Reshchikov, H. Morkoç̌, S. K. Lee, Jeong-Yeol Han, H. Morkoç, Feng Yun, W. J. Moore, B. V. Shanabrook and R. J. Molnar and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

S. S. Park

36 papers receiving 1.0k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
S. S. Park South Korea 20 875 582 536 429 249 36 1.0k
E. Richter Germany 17 724 0.8× 456 0.8× 445 0.8× 418 1.0× 228 0.9× 69 919
I. K. Shmagin United States 11 795 0.9× 389 0.7× 419 0.8× 391 0.9× 360 1.4× 16 1.0k
C. H. Kuo Taiwan 17 715 0.8× 433 0.7× 573 1.1× 345 0.8× 234 0.9× 46 935
P. H. Jefferson United Kingdom 16 529 0.6× 435 0.7× 662 1.2× 554 1.3× 337 1.4× 23 1.1k
B. P. Luther United States 12 743 0.8× 323 0.6× 272 0.5× 602 1.4× 233 0.9× 16 930
Darren B. Thomson United States 15 609 0.7× 566 1.0× 673 1.3× 397 0.9× 152 0.6× 56 1.1k
G. H. Gainer United States 13 942 1.1× 492 0.8× 565 1.1× 409 1.0× 565 2.3× 36 1.2k
C. J. Tun Taiwan 17 546 0.6× 414 0.7× 499 0.9× 333 0.8× 153 0.6× 46 781
Junxue Ran China 14 576 0.7× 402 0.7× 358 0.7× 367 0.9× 208 0.8× 47 828

Countries citing papers authored by S. S. Park

Since Specialization
Citations

This map shows the geographic impact of S. S. Park's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. S. Park with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. S. Park more than expected).

Fields of papers citing papers by S. S. Park

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. S. Park. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. S. Park. The network helps show where S. S. Park may publish in the future.

Co-authorship network of co-authors of S. S. Park

This figure shows the co-authorship network connecting the top 25 collaborators of S. S. Park. A scholar is included among the top collaborators of S. S. Park based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. S. Park. S. S. Park is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Park, Yongsung, et al.. (2011). 4.2: Integrated Scan Driver with Oxide TFTs Using Floating Gate Method. SID Symposium Digest of Technical Papers. 42(1). 25–27. 27 indexed citations
2.
Wysmołek, A., K.P. Korona, R. Stępniewski, et al.. (2004). Reply to “Comment on ‘Recombination of excitons bound to oxygen and silicon donors in freestanding GaN’ ”. Physical Review B. 69(15). 6 indexed citations
3.
Freitas, Jaime A., W. J. Moore, B. V. Shanabrook, et al.. (2003). Shallow donors in GaN. physica status solidi (b). 240(2). 330–336. 10 indexed citations
4.
Glaser, E. R., Jaime A. Freitas, B. V. Shanabrook, et al.. (2003). Optically detected magnetic resonance of (effective-mass) shallow acceptors in Si-doped GaN homoepitaxial layers. Physical review. B, Condensed matter. 68(19). 31 indexed citations
5.
Reshchikov, M. A., Daming Huang, Feng Yun, et al.. (2003). Unusual luminescence lines in GaN. Journal of Applied Physics. 94(9). 5623–5632. 49 indexed citations
6.
Irokawa, Yoshihiro, B. Luo, Jihyun Kim, et al.. (2003). Current–voltage and reverse recovery characteristics of bulk GaN p-i-n rectifiers. Applied Physics Letters. 83(11). 2271–2273. 22 indexed citations
7.
Baik, Kwang Hyeon, Yoshihiro Irokawa, Jihyun Kim, et al.. (2003). 160-A bulk GaN Schottky diode array. Applied Physics Letters. 83(15). 3192–3194. 10 indexed citations
8.
Choh, Sung Ho, et al.. (2003). Paramagnetic defects in neutron irradiated bulk GaN crystals. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 597–600. 4 indexed citations
9.
Choi, H. W., et al.. (2002). 69Gaand71GaNMR studies of quadrupole interaction in the free-standing GaN single crystals grown by hydride vapor-phase epitaxy. Physical review. B, Condensed matter. 65(19). 9 indexed citations
10.
Reshchikov, M. A., Feng Yun, Daming Huang, et al.. (2002). Photoluminescence of GaN Grown by Molecular Beam Epitaxy on Freestanding GaN Template. MRS Proceedings. 722. 5 indexed citations
11.
Wysmołek, A., K.P. Korona, R. Stępniewski, et al.. (2002). Recombination of excitons bound to oxygen and silicon donors in freestanding GaN. Physical review. B, Condensed matter. 66(24). 56 indexed citations
12.
Moore, W. J., Jaime A. Freitas, S. K. Lee, S. S. Park, & Jeong-Yeol Han. (2002). Magneto-optical studies of free-standing hydride-vapor-phase epitaxial GaN. Physical review. B, Condensed matter. 65(8). 50 indexed citations
13.
Jasiński, Jacek B., Z. Liliental‐Weber, Daming Huang, et al.. (2002). Microstructures of GaN and InxGa1-xN Films Grown by MOCVD on freestanding GaN Templates. MRS Proceedings. 722. 2 indexed citations
14.
Freitas, J. A., W. J. Moore, B. V. Shanabrook, et al.. (2002). Donor-related recombination processes in hydride-vapor-phase epitaxial GaN. Physical review. B, Condensed matter. 66(23). 79 indexed citations
15.
Polyakov, A. Y., A. V. Govorkov, N. B. Smirnov, et al.. (2002). Microcathodoluminescence and electron beam induced current observation of dislocations in freestanding thick n-GaN sample grown by hydride vapor phase epitaxy. Journal of Applied Physics. 92(9). 5238–5240. 9 indexed citations
16.
Oh, Eunsoon, et al.. (2001). Optical properties of GaN grown by hydride vapor-phase epitaxy. Applied Physics Letters. 78(3). 273–275. 38 indexed citations
17.
Huang, Daming, Feng Yun, M. A. Reshchikov, et al.. (2001). Hall mobility and carrier concentration in free-standing high quality GaN templates grown by hydride vapor phase epitaxy. Solid-State Electronics. 45(5). 711–715. 57 indexed citations
18.
Reshchikov, M. A., Daming Huang, Feng Yun, et al.. (2001). Photoluminescence of GaN grown by molecular-beam epitaxy on a freestanding GaN template. Applied Physics Letters. 79(23). 3779–3781. 40 indexed citations
19.
Jasiński, Jacek B., W. Swider, Z. Liliental‐Weber, et al.. (2001). Characterization of free-standing hydride vapor phase epitaxy GaN. Applied Physics Letters. 78(16). 2297–2299. 47 indexed citations
20.
Visconti, Paolo, K. M. Jones, M. A. Reshchikov, et al.. (2000). Characteristics of free-standing hydride-vapor-phase-epitaxy-grown GaN with very low defect concentration. Applied Physics Letters. 77(23). 3743–3745. 29 indexed citations

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