Praneeth Ranga

1.1k total citations
27 papers, 805 citations indexed

About

Praneeth Ranga is a scholar working on Materials Chemistry, Electronic, Optical and Magnetic Materials and Renewable Energy, Sustainability and the Environment. According to data from OpenAlex, Praneeth Ranga has authored 27 papers receiving a total of 805 indexed citations (citations by other indexed papers that have themselves been cited), including 24 papers in Materials Chemistry, 23 papers in Electronic, Optical and Magnetic Materials and 14 papers in Renewable Energy, Sustainability and the Environment. Recurrent topics in Praneeth Ranga's work include Ga2O3 and related materials (23 papers), ZnO doping and properties (23 papers) and Advanced Photocatalysis Techniques (14 papers). Praneeth Ranga is often cited by papers focused on Ga2O3 and related materials (23 papers), ZnO doping and properties (23 papers) and Advanced Photocatalysis Techniques (14 papers). Praneeth Ranga collaborates with scholars based in United States, Sweden and Germany. Praneeth Ranga's co-authors include Sriram Krishnamoorthy, Arkka Bhattacharyya, Saurav Roy, Carl Peterson, Michael A. Scarpulla, Jacob H. Leach, Berardi Sensale‐Rodriguez, Luisa Whittaker‐Brooks, A. Osinsky and Fikadu Alema and has published in prestigious journals such as ACS Nano, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Praneeth Ranga

27 papers receiving 786 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Praneeth Ranga United States 17 757 722 384 169 88 27 805
Saurav Roy United States 16 771 1.0× 716 1.0× 388 1.0× 172 1.0× 75 0.9× 27 811
Kazushiro Nomura Japan 7 800 1.1× 774 1.1× 405 1.1× 137 0.8× 80 0.9× 8 837
Daivasigamani Krishnamurthy Japan 8 874 1.2× 865 1.2× 384 1.0× 222 1.3× 127 1.4× 24 954
Riena Jinno Japan 15 703 0.9× 688 1.0× 361 0.9× 172 1.0× 82 0.9× 22 743
Yuncong Cai China 12 636 0.8× 583 0.8× 276 0.7× 153 0.9× 77 0.9× 17 667
Nidhin Kurian Kalarickal United States 13 627 0.8× 569 0.8× 296 0.8× 191 1.1× 118 1.3× 27 678
Tiwei Chen China 14 410 0.5× 404 0.6× 242 0.6× 159 0.9× 95 1.1× 36 507
Keita Konishi Japan 9 1.3k 1.7× 1.2k 1.7× 638 1.7× 237 1.4× 121 1.4× 26 1.3k
А. I. Kochkova Russia 17 897 1.2× 852 1.2× 594 1.5× 165 1.0× 53 0.6× 50 934
Mario Brützam Germany 9 445 0.6× 502 0.7× 210 0.5× 159 0.9× 43 0.5× 12 566

Countries citing papers authored by Praneeth Ranga

Since Specialization
Citations

This map shows the geographic impact of Praneeth Ranga's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Praneeth Ranga with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Praneeth Ranga more than expected).

Fields of papers citing papers by Praneeth Ranga

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Praneeth Ranga. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Praneeth Ranga. The network helps show where Praneeth Ranga may publish in the future.

Co-authorship network of co-authors of Praneeth Ranga

This figure shows the co-authorship network connecting the top 25 collaborators of Praneeth Ranga. A scholar is included among the top collaborators of Praneeth Ranga based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Praneeth Ranga. Praneeth Ranga is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Mock, A., Steffen Richter, V. Stanishev, et al.. (2024). Effective uniaxial dielectric function tensor and optical phonons in (2¯01)-oriented β-Ga2O3 films with equally distributed sixfold-rotation domains. Physical Review Applied. 22(4). 2 indexed citations
2.
Bhattacharyya, Arkka, Sriram Krishnamoorthy, Praneeth Ranga, et al.. (2024). Utilizing (Al, Ga)2O3/Ga2O3 superlattices to measure cation vacancy diffusion and vacancy-concentration-dependent diffusion of Al, Sn, and Fe in β-Ga2O3. APL Materials. 12(8). 3 indexed citations
3.
Bhattacharyya, Arkka, Carl Peterson, Takeki Itoh, et al.. (2023). Enhancing the electron mobility in Si-doped (010) β-Ga2O3 films with low-temperature buffer layers. APL Materials. 11(2). 46 indexed citations
4.
Ranga, Praneeth, Jani Jesenovec, John S. McCloy, et al.. (2022). Effect of extended defects on photoluminescence of gallium oxide and aluminum gallium oxide epitaxial films. Scientific Reports. 12(1). 3243–3243. 36 indexed citations
5.
Bhattacharyya, Arkka, Saurav Roy, Praneeth Ranga, Carl Peterson, & Sriram Krishnamoorthy. (2022). High-Mobility Tri-Gate β-Ga2O3 MESFETs With a Power Figure of Merit Over 0.9 GW/cm2. IEEE Electron Device Letters. 43(10). 1637–1640. 44 indexed citations
6.
Ranga, Praneeth, Arkka Bhattacharyya, Yunshan Wang, et al.. (2022). Sympetalous defects in metalorganic vapor phase epitaxy (MOVPE)-grown homoepitaxial β-Ga2O3 films. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 41(1). 14 indexed citations
7.
Bhattacharyya, Arkka, Shivam Sharma, Fikadu Alema, et al.. (2022). 4.4 kV β-Ga2O3 MESFETs with power figure of merit exceeding 100 MW cm−2. Applied Physics Express. 15(6). 61001–61001. 56 indexed citations
8.
Roy, Saurav, Arkka Bhattacharyya, Praneeth Ranga, et al.. (2021). In Situ Dielectric Al2O3/β‐Ga2O3 Interfaces Grown Using Metal–Organic Chemical Vapor Deposition. Advanced Electronic Materials. 7(11). 23 indexed citations
9.
Roy, Saurav, et al.. (2021). High-k Oxide Field-Plated Vertical (001) β-Ga2O3Schottky Barrier Diode With Baliga’s Figure of Merit Over 1 GW/cm2. IEEE Electron Device Letters. 42(8). 1140–1143. 135 indexed citations
10.
Bhattacharyya, Arkka, Praneeth Ranga, Saurav Roy, et al.. (2021). Multi-kV Class β-Ga₂O₃ MESFETs With a Lateral Figure of Merit Up to 355 MW/cm². IEEE Electron Device Letters. 42(9). 1272–1275. 68 indexed citations
11.
Sun, Rujun, et al.. (2021). Oxygen annealing induced changes in defects within β -Ga 2 O 3 epitaxial films measured using photoluminescence. Journal of Physics D Applied Physics. 54(17). 174004–174004. 19 indexed citations
12.
Ranga, Praneeth, Arkka Bhattacharyya, Luisa Whittaker‐Brooks, Michael A. Scarpulla, & Sriram Krishnamoorthy. (2021). N-type doping of low-pressure chemical vapor deposition grown β-Ga2O3 thin films using solid-source germanium. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 39(3). 25 indexed citations
13.
Thoutam, Laxman Raju, et al.. (2021). Impurity band conduction in Si-doped β -Ga2O3 films. Applied Physics Letters. 118(7). 15 indexed citations
14.
Bhattacharyya, Arkka, Saurav Roy, Praneeth Ranga, et al.. (2021). 130 mA mm−1 β-Ga2O3 metal semiconductor field effect transistor with low-temperature metalorganic vapor phase epitaxy-regrown ohmic contacts. Applied Physics Express. 14(7). 76502–76502. 46 indexed citations
15.
Knight, Sean, Ashish Chanana, Praneeth Ranga, et al.. (2020). The anisotropic quasi-static permittivity of single-crystal β -Ga2O3 measured by terahertz spectroscopy. Applied Physics Letters. 117(25). 40 indexed citations
16.
Bhattacharyya, Arkka, Praneeth Ranga, Saurav Roy, et al.. (2020). Low temperature homoepitaxy of (010) β -Ga2O3 by metalorganic vapor phase epitaxy: Expanding the growth window. Applied Physics Letters. 117(14). 64 indexed citations
17.
Ranga, Praneeth, et al.. (2020). Delta-doped β -Ga2O3 films with narrow FWHM grown by metalorganic vapor-phase epitaxy. Applied Physics Letters. 117(17). 18 indexed citations
18.
Chatterjee, Bikramjit, Yiwen Song, James Spencer Lundh, et al.. (2020). Electro-thermal co-design of β -(AlxGa1-x)2O3/Ga2O3 modulation doped field effect transistors. Applied Physics Letters. 117(15). 40 indexed citations
19.
20.
Ranga, Praneeth, et al.. (2017). Growth of InGaP Alloy Nanowires with Widely Tunable Bandgaps on Silicon Substrates. Conference on Lasers and Electro-Optics. 85. STh3I.4–STh3I.4. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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