Jonathan Anderson

600 total citations
32 papers, 465 citations indexed

About

Jonathan Anderson is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Mechanics of Materials. According to data from OpenAlex, Jonathan Anderson has authored 32 papers receiving a total of 465 indexed citations (citations by other indexed papers that have themselves been cited), including 19 papers in Electrical and Electronic Engineering, 19 papers in Materials Chemistry and 15 papers in Mechanics of Materials. Recurrent topics in Jonathan Anderson's work include Diamond and Carbon-based Materials Research (14 papers), Metal and Thin Film Mechanics (14 papers) and Semiconductor materials and devices (14 papers). Jonathan Anderson is often cited by papers focused on Diamond and Carbon-based Materials Research (14 papers), Metal and Thin Film Mechanics (14 papers) and Semiconductor materials and devices (14 papers). Jonathan Anderson collaborates with scholars based in United States, United Kingdom and Denmark. Jonathan Anderson's co-authors include E. L. Piner, M. Holtz, Raju Ahmed, Samuel Graham, Luke Yates, Mohammad Nazari, Mark S. Goorsky, Cathy Lee, Xing Gu and Toshihiro Aoki and has published in prestigious journals such as SHILAP Revista de lepidopterología, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Jonathan Anderson

31 papers receiving 442 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Jonathan Anderson United States 12 307 302 199 135 64 32 465
Shih-Yung Huang Taiwan 13 231 0.8× 216 0.7× 140 0.7× 83 0.6× 103 1.6× 34 401
Tela Favaloro United States 9 123 0.4× 245 0.8× 88 0.4× 103 0.8× 58 0.9× 17 369
Zhen Bi China 13 229 0.7× 240 0.8× 101 0.5× 40 0.3× 151 2.4× 25 388
G.M. Matenoglou Greece 13 152 0.5× 260 0.9× 110 0.6× 284 2.1× 54 0.8× 19 413
Amber Reed United States 12 136 0.4× 192 0.6× 47 0.2× 96 0.7× 86 1.3× 22 347
Kyoung‐Bo Kim South Korea 12 227 0.7× 214 0.7× 35 0.2× 61 0.5× 72 1.1× 57 358
Thomas Gessmann United States 10 247 0.8× 203 0.7× 273 1.4× 39 0.3× 96 1.5× 14 482
Joseph Casamento United States 15 233 0.8× 322 1.1× 283 1.4× 184 1.4× 114 1.8× 32 597
Jun Uzuhashi Japan 14 180 0.6× 174 0.6× 141 0.7× 61 0.5× 96 1.5× 59 418
Peide Han China 11 210 0.7× 168 0.6× 118 0.6× 38 0.3× 81 1.3× 31 392

Countries citing papers authored by Jonathan Anderson

Since Specialization
Citations

This map shows the geographic impact of Jonathan Anderson's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Jonathan Anderson with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Jonathan Anderson more than expected).

Fields of papers citing papers by Jonathan Anderson

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Jonathan Anderson. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Jonathan Anderson. The network helps show where Jonathan Anderson may publish in the future.

Co-authorship network of co-authors of Jonathan Anderson

This figure shows the co-authorship network connecting the top 25 collaborators of Jonathan Anderson. A scholar is included among the top collaborators of Jonathan Anderson based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Jonathan Anderson. Jonathan Anderson is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Anderson, Jonathan, et al.. (2025). Lateral growth of diamond based on precise seeding patterns using electron-beam lithography. SHILAP Revista de lepidopterología. 5(1).
2.
Muhowski, Aaron J., Joshua J. Cooper, Fabián Naab, et al.. (2023). Influence of H on Sn incorporation in GeSnC alloys grown using molecular beam epitaxy. Journal of Applied Physics. 134(19). 5 indexed citations
3.
Anderson, Jonathan, et al.. (2023). Atomic layer deposition of Al2O3 interlayer for improving AlN growth on silicon substrates. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 41(5). 2 indexed citations
4.
Anderson, Jonathan, et al.. (2023). Heterogeneous integration of high-quality diamond on aluminum nitride with low and high seeding density. Journal of Crystal Growth. 610. 127172–127172. 4 indexed citations
5.
Anderson, Jonathan, et al.. (2022). Heterogeneous Integration of High-Quality Diamond on Aluminum Nitride with High Seeding Density. SSRN Electronic Journal. 1 indexed citations
6.
Ahmed, Raju, et al.. (2021). Improved Electrical Properties of AlGaN/GaN High-Electron-Mobility Transistors by In Situ Tailoring the SiNx Passivation Layer. ACS Applied Materials & Interfaces. 13(15). 18264–18273. 18 indexed citations
7.
Anderson, Jonathan, et al.. (2021). Effect of seeding density on the growth of diamond films by hot-filament chemical vapor deposition from sparse to dense range. Journal of Applied Physics. 130(22). 12 indexed citations
8.
Ahmed, Raju, et al.. (2020). Integration of GaN and Diamond Using Epitaxial Lateral Overgrowth. ACS Applied Materials & Interfaces. 12(35). 39397–39404. 24 indexed citations
9.
Ahmed, Raju, et al.. (2020). Effect of precursor stoichiometry on morphology, phase purity, and texture formation of hot filament CVD diamond films grown on Si (100) substrate. Journal of Materials Science Materials in Electronics. 31(11). 8597–8606. 7 indexed citations
10.
Kjeldsen, Thomas, Wouter F. J. Hogendorf, Christian W. Tornøe, et al.. (2020). Dually Reactive Long Recombinant Linkers for Bioconjugations as an Alternative to PEG. ACS Omega. 5(31). 19827–19833. 3 indexed citations
11.
Ahmed, Raju, Jonathan Anderson, Mohammad Nazari, et al.. (2019). Structure and Interface Analysis of Diamond on an AlGaN/GaN HEMT Utilizing an in Situ SiNx Interlayer Grown by MOCVD. ACS Applied Electronic Materials. 1(8). 1387–1399. 42 indexed citations
12.
Ahmed, Raju, et al.. (2019). Selective Area Deposition of Hot Filament CVD Diamond on 100 mm MOCVD Grown AlGaN/GaN Wafers. Crystal Growth & Design. 19(2). 672–677. 20 indexed citations
13.
Ahmed, Raju, et al.. (2019). Effect of reactant gas stoichiometry of in-situ SiNx passivation on structural properties of MOCVD AlGaN/GaN HEMTs. Journal of Crystal Growth. 517. 28–34. 13 indexed citations
14.
15.
Nazari, Mohammad, Jonathan Anderson, Karl D. Hobart, et al.. (2017). Optical characterization and thermal properties of CVD diamond films for integration with power electronics. Solid-State Electronics. 136. 12–17. 11 indexed citations
16.
Nazari, Mohammad, Jonathan Anderson, Karl D. Hobart, et al.. (2017). Hexagonal boron nitride particles for determining the thermal conductivity of diamond films based on near-ultraviolet micro-Raman mapping. Journal of Physics D Applied Physics. 50(24). 24LT01–24LT01. 2 indexed citations
17.
Anderson, Jonathan, E. L. Piner, Firooz Faili, et al.. (2017). Ultraviolet and visible micro‐Raman and micro‐photoluminescence spectroscopy investigations of stress on a 75‐mm GaN‐on‐diamond wafer. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 14(8). 4 indexed citations
18.
Nazari, Mohammad, Jonathan Anderson, A. Savage, et al.. (2016). Near-ultraviolet micro-Raman study of diamond grown on GaN. Applied Physics Letters. 108(3). 14 indexed citations
19.
Nazari, Mohammad, Jonathan Anderson, E. L. Piner, et al.. (2016). Ultraviolet micro-Raman spectroscopy stress mapping of a 75-mm GaN-on-diamond wafer. Applied Physics Letters. 108(21). 27 indexed citations
20.
Johnson, Derek W., et al.. (2013). PECVD Silicon Nitride Passivation of AlGaN/GaN Heterostructures. IEEE Transactions on Electron Devices. 60(3). 1082–1087. 27 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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