M. E. Aumer

487 citations

20 papers · 424 indexed · h-index 12

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials 18
Electronic, Optical and Magnetic Materials
- Ga2O3 and related materials 4
Mechanics of Materials top 10%
- Metal and Thin Film Mechanics 7
Atomic and Molecular Physics, and Optics
- Semiconductor Quantum Structures and Devices 3
Materials Chemistry
- ZnO doping and properties 4
Biomedical Engineering
- Acoustic Wave Resonator Technologies 7
Electrical and Electronic Engineering
- Semiconductor materials and devices 6
- Radio Frequency Integrated Circuit Design 1

Co-authors: S. M. Bedair S. F. LeBoeuf F. G. McIntosh H. X. Jiang J. Y. Lin Baxter Moody M. Smith J. C. Roberts
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Mechanics of Materials
Journals: Applied Physics Letters (7 papers)IEEE Electron Device Letters (1 paper)Applied Surface Science (1 paper)
Partner nations: United States Finland Germany

In The Last Decade

M. E. Aumer

19 papers receiving 414 citations

Peers

Countries citing papers authored by M. E. Aumer

Since Specialization

Citations

This map shows the geographic impact of M. E. Aumer's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. E. Aumer with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. E. Aumer more than expected).

Fields of papers citing papers by M. E. Aumer

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. E. Aumer. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. E. Aumer. The network helps show where M. E. Aumer may publish in the future.

Co-authorship network

The 25 scholars most cited alongside M. E. Aumer, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with M. E. Aumer Line = papers co-authored together M. E. Aumer links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work
1	Earbud-Based Sensor for the Assessment of Energy Expenditure, HR, and V˙O2max Medicine & Science in Sports & Exercise ·Rosa Adelaida Parada Peláez,M. E. Aumer,William E. Kraus,Johanna L. Johnson,Brian D. Duscha	2014	37
2	RF Power Measurements of InAlN/GaN Unstrained HEMTs on SiC Substrates at 10 GHz IEEE Electron Device Letters ·Gregg H. Jessen,J. Gillespie,G. D. Via,Antonio Crespo,Derrick Langley,M. E. Aumer,Georgios Vlachakis,Alien R. Nissenson,Darren B. Thomson,Deborah P. Partlow	2007	27
3	PVT Growth at High Temperature: Wide Bandgap Semiconductors ECS Meeting Abstracts ·Sarah Wheatley,B. Wagner,M.E. Sherwin,Pang Xue-min,M. E. Aumer,Darren B. Thomson,Kazuhiro Takimoto,光政藤塚,H.I. Marsden	2006	0
4	Validating gallium nitride growth kinetics using a precursor delivery showerhead as a novel chemical reactor Journal of Crystal Growth ·Xuejie Huan,Raymond A. Adomaitis,M. E. Aumer,Deborah P. Partlow,Darren B. Thomson,Gary W. Rubloff	2006	8
5	P1J-4 High-Q FBARs Using Epitaxial AlN Films S. V. Krishnaswamy,J.D. Adam,M. E. Aumer	2006	5
6	In situ chemical sensing in AlGaN∕GaN high electron mobility transistor metalorganic chemical vapor deposition process for real-time prediction of product crystal quality and advanced process control Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Smets Florian,Gary W. Rubloff,M. E. Aumer,Darren B. Thomson,Deborah P. Partlow,Xuejie Huan,Raymond A. Adomaitis	2005	4
7	Real-time material quality prediction, fault detection, and contamination control in AlGaN∕GaN high electron mobility transistor metalorganic chemical vapor deposition process using in situ chemical sensing Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Moises da Silva,Gary W. Rubloff,M. E. Aumer,Darren B. Thomson,Deborah P. Partlow	2005	2
8	In situ chemical sensing in AlGaN∕GaN metal organic chemical vapor deposition process for precision film thickness metrology and real-time advanced process control Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Smets Florian,Rahat Abbas,Gary W. Rubloff,M. E. Aumer,Darren B. Thomson,Deborah P. Partlow	2005	1
9	Effect of H2 on nitrogen incorporation in the metalorganic chemical vapor deposition of GaAs1−yNy (0⩽y⩽0.08) Applied Physics Letters ·Baxter Moody,井上純雄,N. A. El-Masry,J. C. Roberts,M. E. Aumer,S. F. LeBoeuf,S. M. Bedair	2002	6
10	Ultraviolet-visible metal-semiconductor-metal photodetectors fabricated from InxGa1−xN (0≤x≤0.13) Journal of Electronic Materials ·J. C. Roberts,C. A. Parker,John F. Muth,S. F. LeBoeuf,M. E. Aumer,S. M. Bedair,M. J. Reed	2002	17
11	Effects of tensile, compressive, and zero strain on localized states in AlInGaN/InGaN quantum-well structures Applied Physics Letters ·M. E. Aumer,S. F. LeBoeuf,Baxter Moody,S. M. Bedair,K. B. Nam,J. Y. Lin,H. X. Jiang	2002	26
12	Self-assembled AlInGaN quaternary superlattice structures Applied Physics Letters ·N. A. El-Masry,К. К. Абдулрахим,S. F. LeBoeuf,M. E. Aumer,J. C. Roberts,S. M. Bedair	2001	18
13	Strain-induced piezoelectric field effects on light emission energy and intensity from AlInGaN/InGaN quantum wells Applied Physics Letters ·M. E. Aumer,S. F. LeBoeuf,Baxter Moody,S. M. Bedair	2001	47
14	Effects of tensile and compressive strain on the luminescence properties of AlInGaN/InGaN quantum well structures Applied Physics Letters ·M. E. Aumer,S. F. LeBoeuf,S. M. Bedair,M. Smith,J. Y. Lin,H. X. Jiang	2000	87
15	Exploring the effects of tensile and compressive strain on two-dimensional electron gas properties within InGaN quantum wells Applied Physics Letters ·S. F. LeBoeuf,M. E. Aumer,S. M. Bedair	2000	11
16	High optical quality AlInGaN by metalorganic chemical vapor deposition Applied Physics Letters ·M. E. Aumer,S. F. LeBoeuf,F. G. McIntosh,S. M. Bedair	1999	86
17	Epitaxial deposition of GaInN and InN using the rotating susceptor ALE system Applied Surface Science ·F. G. McIntosh,E. L. Piner,J. C. Roberts,К. К. Абдулрахим,M. E. Aumer,N. A. El-Masry,S. M. Bedair	1997	13
18	Stacked InGaN/AlGaN Double Heterostructures MRS Proceedings ·J. C. Roberts,F. G. McIntosh,M. E. Aumer,E. L. Piner,Yurii R. Nosov,Alsa Yuda Putri,N. A. El-Masry,S. M. Bedair	1996	1
19	A Model for Indium Incorporation in the Growth of InGaN Films MRS Proceedings ·E. L. Piner,F. G. McIntosh,J. C. Roberts,K. S. Boutros,M. E. Aumer,Yurii R. Nosov,N. A. El-Masry,S. M. Bedair,R Rohtermundt	1996	12
20	Growth and Properties of InGaN and AlInGaN Thin Films on (0001) Sapphire MRS Internet Journal of Nitride Semiconductor Research ·E. L. Piner,F. G. McIntosh,J. C. Roberts,M. E. Aumer,Yurii R. Nosov,S. M. Bedair,N. A. El-Masry	1996	16

About M. E. Aumer

M. E. Aumer is a scholar working on Condensed Matter Physics, Mechanics of Materials, Electronic, Optical and Magnetic Materials, Biomedical Engineering and Electrical and Electronic Engineering, having authored 20 papers that have together received 424 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (18 papers), Acoustic Wave Resonator Technologies (7 papers), Metal and Thin Film Mechanics (7 papers), Semiconductor materials and devices (6 papers), Ga2O3 and related materials (4 papers), ZnO doping and properties (4 papers), Semiconductor Quantum Structures and Devices (3 papers) and Radio Frequency Integrated Circuit Design (1 paper). The work is most often cited by research in Condensed Matter Physics (321 citations), Electronic, Optical and Magnetic Materials (160 citations), Mechanics of Materials (113 citations), Atomic and Molecular Physics, and Optics (125 citations) and Materials Chemistry (132 citations). M. E. Aumer has collaborated with scholars based in United States, Finland and Germany. Frequent co-authors include S. M. Bedair, S. F. LeBoeuf, F. G. McIntosh, H. X. Jiang, J. Y. Lin, Baxter Moody, M. Smith, J. C. Roberts, N. A. El-Masry and Brian D. Duscha. Their work appears in journals such as Applied Physics Letters, IEEE Electron Device Letters, Applied Surface Science, Journal of Crystal Growth and Medicine & Science in Sports & Exercise.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact