Alfonso Patti

697 total citations
18 papers, 569 citations indexed

About

Alfonso Patti is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Alfonso Patti has authored 18 papers receiving a total of 569 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Electrical and Electronic Engineering, 12 papers in Condensed Matter Physics and 3 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Alfonso Patti's work include GaN-based semiconductor devices and materials (12 papers), Semiconductor materials and devices (11 papers) and Silicon Carbide Semiconductor Technologies (10 papers). Alfonso Patti is often cited by papers focused on GaN-based semiconductor devices and materials (12 papers), Semiconductor materials and devices (11 papers) and Silicon Carbide Semiconductor Technologies (10 papers). Alfonso Patti collaborates with scholars based in Italy, Switzerland and Czechia. Alfonso Patti's co-authors include Fabrizio Roccaforte, Giuseppe Greco, Patrick Fiorenza, Ferdinando Iucolano, Mario Saggio, Filippo Giannazzo, Raffaella Lo Nigro, Marilena Vivona, Gaudenzio Meneghesso and G. Verzellesi and has published in prestigious journals such as Applied Physics Letters, Applied Surface Science and IEEE Transactions on Electron Devices.

In The Last Decade

Alfonso Patti

18 papers receiving 553 citations

Peers

Alfonso Patti

EEE

CMP

EOMM

AMPO

Wenjian Liu United States

Hamid Amini Moghadam Australia

R. Tyagi United States

Norikazu Nakamura Japan

A. Constant Spain

T. P. Chow United States

Gregor Pobegen Austria

J. L. Garrett United States

N. Killat United Kingdom

Wenjian Liu United States

Alfonso Patti

202 ×0.4

EEE

212 ×0.6

CMP

175 ×0.9

EOMM

133 ×1.3

93 ×1.1

AMPO

Citations per year, relative to Alfonso Patti Alfonso Patti (= 1×) peers Wenjian Liu

Countries citing papers authored by Alfonso Patti

Since Specialization

Citations

This map shows the geographic impact of Alfonso Patti's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Alfonso Patti with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Alfonso Patti more than expected).

Fields of papers citing papers by Alfonso Patti

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Alfonso Patti. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Alfonso Patti. The network helps show where Alfonso Patti may publish in the future.

Co-authorship network of co-authors of Alfonso Patti

This figure shows the co-authorship network connecting the top 25 collaborators of Alfonso Patti. A scholar is included among the top collaborators of Alfonso Patti based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Alfonso Patti. Alfonso Patti is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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18 of 18 papers shown

Fiorenza, Patrick, Giuseppe Greco, Ferdinando Iucolano, Alfonso Patti, & Fabrizio Roccaforte. (2017). Channel Mobility in GaN Hybrid MOS-HEMT Using SiO₂as Gate Insulator. IEEE Transactions on Electron Devices. 64(7). 2893–2899. 39 indexed citations

Chini, Alessandro, Gaudenzio Meneghesso, Matteo Meneghini, et al.. (2016). Experimental and Numerical Analysis of Hole Emission Process From Carbon-Related Traps in GaN Buffer Layers. IEEE Transactions on Electron Devices. 63(9). 3473–3478. 90 indexed citations

Greco, Giuseppe, Ferdinando Iucolano, Filippo Giannazzo, et al.. (2016). Metal/P-GaN Contacts on AlGaN/GaN Heterostructures for Normally-Off HEMTs. Materials science forum. 858. 1170–1173. 7 indexed citations

Roccaforte, Fabrizio, Marilena Vivona, Giuseppe Greco, et al.. (2016). Ti/Al-based contacts to p-type SiC and GaN for power device applications. physica status solidi (a). 214(4). 1600357–1600357. 17 indexed citations

Iucolano, Ferdinando, Antonino Parisi, Alfonso Patti, et al.. (2016). Correlation between dynamic Rdsou transients and Carbon related buffer traps in AlGaN/GaN HEMTs. IRIS UNIMORE (University of Modena and Reggio Emilia). CD–2. 18 indexed citations

Fiorenza, Patrick, Giuseppe Greco, Marilena Vivona, et al.. (2016). Electrical characterization of trapping phenomena at SiO₂/SiC and SiO₂/GaN in MOS-based devices. physica status solidi (a). 214(4). 1600366–1600366. 4 indexed citations

Greco, Giuseppe, Ferdinando Iucolano, Salvatore Di Franco, et al.. (2016). Effects of Annealing Treatments on the Properties of Al/Ti/p-GaN Interfaces for Normally OFF p-GaN HEMTs. IEEE Transactions on Electron Devices. 63(7). 2735–2741. 60 indexed citations

Fiorenza, Patrick, Giuseppe Greco, Ferdinando Iucolano, Alfonso Patti, & Fabrizio Roccaforte. (2015). Slow and fast traps in metal-oxide-semiconductor capacitors fabricated on recessed AlGaN/GaN heterostructures. Applied Physics Letters. 106(14). 31 indexed citations

Saggio, Mario, et al.. (2015). SiC- and GaN-based power devices: Technologies, products and applications. 16.8.1–16.8.5. 13 indexed citations

10.

Roccaforte, Fabrizio, Patrick Fiorenza, Giuseppe Greco, et al.. (2014). Challenges for energy efficient wide band gap semiconductor power devices. physica status solidi (a). 211(9). 2063–2071. 113 indexed citations

11.

Roccaforte, Fabrizio, Patrick Fiorenza, Giuseppe Greco, et al.. (2014). Recent advances on dielectrics technology for SiC and GaN power devices. Applied Surface Science. 301. 9–18. 131 indexed citations

12.

Iucolano, F., Antonio Stocco, Fabiana Rampazzo, et al.. (2013). Influence of properties of Si<inf>3</inf>N<inf>4</inf> passivation layer on the electrical characteristics of Normally-off AlGaN/GaN HEMT. IRIS UNIMORE (University of Modena and Reggio Emilia). 98. 162–165. 8 indexed citations

13.

Sorrentino, Giuseppe, et al.. (2013). GaN HEMT devices: Experimental results on normally-on, normally-off and cascode configuration. 816–821. 21 indexed citations

14.

Busatto, G., et al.. (2002). Nondestructive testing of power MOSFET's failures during reverse recovery of drain-source diode. 1. 593–599. 7 indexed citations

15.

Lavalle, Marco, et al.. (1999). On the use of a bipolar power transistor as routine dosimeter in radiation processing. 1 indexed citations

16.

Busatto, G., et al.. (1996). Advanced RBSOA analysis for advanced power BJTs. Microelectronics Reliability. 36(7-8). 1077–1093. 4 indexed citations

17.

Patti, Alfonso, et al.. (1993). Switching time control on bipolar power transistors by electron irradiation. Radiation Physics and Chemistry. 42(4-6). 1015–1018. 2 indexed citations

18.

Puglisi, Orazio, et al.. (1987). Breakdown voltage and surface compositon in a lead borosilicate glass. Surface and Interface Analysis. 10(7). 327–331. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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