Bastian Galler

1.4k total citations
30 papers, 1.2k citations indexed

About

Bastian Galler is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Electrical and Electronic Engineering. According to data from OpenAlex, Bastian Galler has authored 30 papers receiving a total of 1.2k indexed citations (citations by other indexed papers that have themselves been cited), including 28 papers in Condensed Matter Physics, 21 papers in Atomic and Molecular Physics, and Optics and 18 papers in Electrical and Electronic Engineering. Recurrent topics in Bastian Galler's work include GaN-based semiconductor devices and materials (28 papers), Semiconductor Quantum Structures and Devices (20 papers) and Semiconductor materials and devices (11 papers). Bastian Galler is often cited by papers focused on GaN-based semiconductor devices and materials (28 papers), Semiconductor Quantum Structures and Devices (20 papers) and Semiconductor materials and devices (11 papers). Bastian Galler collaborates with scholars based in Germany, Italy and United States. Bastian Galler's co-authors include Michael Binder, H.‐J. Lugauer, Martin Straßburg, R. Zeisel, Ines Pietzonka, P. Drechsel, M. Sabathil, J. Wagner, S. Yu. Karpov and Berthold Hahn and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Bastian Galler

30 papers receiving 1.1k citations

Peers

Bastian Galler
I. Izpura Spain
A. Rebey Tunisia
Chuanxin Lian United States
Anirban Bhattacharyya United States
Kathryn M. Kelchner United States
Bastian Galler
Citations per year, relative to Bastian Galler Bastian Galler (= 1×) peers Julien Renard

Countries citing papers authored by Bastian Galler

Since Specialization
Citations

This map shows the geographic impact of Bastian Galler's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Bastian Galler with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Bastian Galler more than expected).

Fields of papers citing papers by Bastian Galler

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Bastian Galler. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Bastian Galler. The network helps show where Bastian Galler may publish in the future.

Co-authorship network of co-authors of Bastian Galler

This figure shows the co-authorship network connecting the top 25 collaborators of Bastian Galler. A scholar is included among the top collaborators of Bastian Galler based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Bastian Galler. Bastian Galler is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Schwarz, Ulrich T., et al.. (2023). Diffusion Analysis of Charge Carriers in InGaN/GaN Heterostructures by Microphotoluminescence. physica status solidi (b). 260(8). 8 indexed citations
2.
Binder, Michael, et al.. (2022). Micro-photoluminescence to investigate lateral diffusion of charge carriers in InGaN/GaN MQWs. 54. 16–16. 2 indexed citations
3.
Gaspar, Diana, L. Pereira, Kai Gehrke, et al.. (2017). High mobility hydrogenated zinc oxide thin films. Solar Energy Materials and Solar Cells. 163. 255–262. 114 indexed citations
4.
Santi, Carlo De, Matteo Meneghini, Nicola Trivellin, et al.. (2016). Thermal droop in InGaN-based LEDs: physical origin and dependence on material properties. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 9768. 97680D–97680D. 4 indexed citations
5.
Nippert, Felix, S. Yu. Karpov, Ines Pietzonka, et al.. (2016). Determination of recombination coefficients in InGaN quantum-well light-emitting diodes by small-signal time-resolved photoluminescence. Japanese Journal of Applied Physics. 55(5S). 05FJ01–05FJ01. 38 indexed citations
6.
Santi, Carlo De, Matteo Meneghini, Bastian Galler, et al.. (2016). Role of defects in the thermal droop of InGaN-based light emitting diodes. Journal of Applied Physics. 119(9). 51 indexed citations
7.
Binder, Michael, Ines Pietzonka, Hans‐Jürgen Lugauer, et al.. (2016). Towards quantification of the crucial impact of auger recombination for the efficiency droop in (AlInGa)N quantum well structures. Optics Express. 24(3). 2971–2971. 9 indexed citations
8.
Karpov, S. Yu., Michael Binder, Bastian Galler, & Dario Schiavon. (2015). Spectral dependence of light extraction efficiency of high‐power III‐nitride light‐emitting diodes. physica status solidi (RRL) - Rapid Research Letters. 9(5). 312–316. 7 indexed citations
9.
Koch, Holger M., Ines Pietzonka, Bastian Galler, et al.. (2015). Effect of antimony on growth mode and properties of thick InGaN layers. Journal of Crystal Growth. 414. 42–48. 3 indexed citations
10.
Meneghini, Matteo, Carlo De Santi, M. Mandurrino, et al.. (2015). Ageing of InGaN-based LEDs: Effects on internal quantum efficiency and role of defects. Microelectronics Reliability. 55(9-10). 1775–1778. 28 indexed citations
11.
Hahn, Berthold, Bastian Galler, & Karl Engl. (2014). Development of high-efficiency and high-power vertical light emitting diodes. Japanese Journal of Applied Physics. 53(10). 100208–100208. 55 indexed citations
12.
Meneghini, Matteo, Bastian Galler, R. Zeisel, et al.. (2014). Characterization of the deep levels responsible for non-radiative recombination in InGaN/GaN light-emitting diodes. Applied Physics Letters. 104(11). 51 indexed citations
13.
Yadav, Amit, Edik U. Rafailov, S. Yu. Karpov, et al.. (2014). Novel evaluation procedure for internal and extraction efficiency of high-power blue LEDs. 1–1. 1 indexed citations
14.
Binder, Michael, G. Brüderl, Christoph Eichler, et al.. (2013). Carrier transport in green AlInGaN based structures on c-plane substrates. Applied Physics Letters. 102(23). 14 indexed citations
15.
Binder, Michael, Bastian Galler, Michael Furitsch, et al.. (2013). Investigations on correlation between I–V characteristic and internal quantum efficiency of blue (AlGaIn)N light-emitting diodes. Applied Physics Letters. 103(22). 21 indexed citations
16.
Schiavon, Dario, Michael Binder, Matthias Peter, et al.. (2012). Wavelength‐dependent determination of the recombination rate coefficients in single‐quantum‐well GaInN/GaN light emitting diodes. physica status solidi (b). 250(2). 283–290. 99 indexed citations
17.
Galler, Bastian, M. Sabathil, A. Laubsch, et al.. (2011). Green high‐power light sources using InGaN multi‐quantum‐well structures for full conversion. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 8(7-8). 2369–2371. 17 indexed citations
18.
Stauß, P., Martin Mandl, A. Laubsch, et al.. (2011). Monolitically grown dual wavelength InGaN LEDs for improved CRI. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 8(7-8). 2396–2398. 3 indexed citations
19.
Galler, Bastian, A. Laubsch, Adam Wojcik, et al.. (2011). Investigation of the carrier distribution in InGaN‐based multi‐quantum‐well structures. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 8(7-8). 2372–2374. 17 indexed citations
20.
Hoehne, Felix, Hans Huebl, Bastian Galler, M. Stutzmann, & Martin Brandt. (2010). Spin-Dependent Recombination between Phosphorus Donors in Silicon andSi/SiO2Interface States Investigated with Pulsed Electrically Detected Electron Double Resonance. Physical Review Letters. 104(4). 46402–46402. 37 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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