David J. Spry

1.5k total citations
85 papers, 1.2k citations indexed

About

David J. Spry is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, David J. Spry has authored 85 papers receiving a total of 1.2k indexed citations (citations by other indexed papers that have themselves been cited), including 78 papers in Electrical and Electronic Engineering, 13 papers in Atomic and Molecular Physics, and Optics and 9 papers in Materials Chemistry. Recurrent topics in David J. Spry's work include Silicon Carbide Semiconductor Technologies (65 papers), Semiconductor materials and devices (19 papers) and Electromagnetic Compatibility and Noise Suppression (17 papers). David J. Spry is often cited by papers focused on Silicon Carbide Semiconductor Technologies (65 papers), Semiconductor materials and devices (19 papers) and Electromagnetic Compatibility and Noise Suppression (17 papers). David J. Spry collaborates with scholars based in United States, Cyprus and Germany. David J. Spry's co-authors include Philip G. Neudeck, Glenn M. Beheim, Liang-Yü Chen, Michael J. Krasowski, Dorothy Lukco, Norman F. Prokop, Carl W. Chang, Roger D. Meredith, Robert S. Okojie and Gary W. Hunter and has published in prestigious journals such as Journal of Applied Physics, Journal of Physics D Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

David J. Spry

81 papers receiving 1.2k citations

Peers

Countries citing papers authored by David J. Spry

Since Specialization

Citations

This map shows the geographic impact of David J. Spry's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by David J. Spry with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites David J. Spry more than expected).

Fields of papers citing papers by David J. Spry

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by David J. Spry. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by David J. Spry. The network helps show where David J. Spry may publish in the future.

Co-authorship network of co-authors of David J. Spry

This figure shows the co-authorship network connecting the top 25 collaborators of David J. Spry. A scholar is included among the top collaborators of David J. Spry based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with David J. Spry. David J. Spry is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Detection of Proton Irradiation Damage in 4H-SiC Schottky Diodes Via Electrically Detected Magnetic Resonance and Near-Zero-Field Magnetoresistance 2025 ·IEEE Transactions on Device and Materials Reliability ·(unknown), Patrick M. Lenahan, Edward S. Bielejec, (unknown), David J. Spry	1
2	Venus Surface Environmental Chamber Test of SiC JFET-R Multi-Chip Circuit Board 2024 ·Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena ·Philip G. Neudeck, Liang-Yü Chen, (unknown), David J. Spry, Norman F. Prokop, Dorothy Lukco, Michael J. Krasowski, Gary W. Hunter	0
3	Optimization of TaSi<sub>2</sub> Processing for 500 °C Durable SiC JFET-R Integrated Circuits 2023 ·Key engineering materials ·David J. Spry, Philip G. Neudeck, Carl W. Chang, Srihari Rajgopal, (unknown)	3
4	Pt/HTCC Alumina based Electronic Packaging System and Integration Processes for High Temperature Harsh Environment Applications 2023 ·IMAPSource Proceedings ·Liang‐Yu Chen, Philip G. Neudeck, David J. Spry, Gary W. Hunter	1
5	Recent Progress in Extreme Environment Durable SiC JFET-R Integrated Circuit Technology 2023 ·IMAPSource Proceedings ·Philip G. Neudeck, David J. Spry, Michael J. Krasowski, Carl W. Chang, (unknown), Srihari Rajgopal, Norman F. Prokop, (unknown), Dorothy Lukco, (unknown), (unknown)	5
6	Durable bond pad structure for electrical connection to extreme environment microelectronic integrated circuits 2023 ·OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) ·David J. Spry	1
7	Upscaling of 500 °C Durable SiC JFET-R Integrated Circuits 2021 ·Additional Conferences (Device Packaging HiTEC HiTEN & CICMT) ·Philip G. Neudeck, David J. Spry, Michael J. Krasowski, Liang-Yü Chen, (unknown), Carl W. Chang, Dorothy Lukco, Glenn M. Beheim, Norman F. Prokop	7
8	Long-Life In-Situ Solar System Explorer (LLISSE) Probe Development 2018 ·Lunar and Planetary Science Conference ·Tibor Kremic, Gary W. Hunter, (unknown), Philip G. Neudeck, David J. Spry, George E. Ponchak, Jennifer L. Jordan, Glenn M. Beheim, Robert S. Okojie, Maximilian C. Scardelletti, John D. Wrbanek, (unknown)	2
9	Magnetic Field Sensing with 4H SiC Diodes: N vs P Implantation 2018 ·Materials science forum ·Corey J. Cochrane, Hannes Kraus, Philip G. Neudeck, David J. Spry, (unknown), (unknown), Patrick M. Lenahan	5
10	Prolonged 500°C Operation of 100+ Transistor Silicon Carbide Integrated Circuits 2018 ·Materials science forum ·David J. Spry, Philip G. Neudeck, Dorothy Lukco, Liangyu Chen, Michael J. Krasowski, Norman F. Prokop, Carl W. Chang, Glenn M. Beheim	16
11	Long-Life In-Situ Solar System Explorer (LLISSE) Probe Concept and Enabling High Temperature Electronics 2017 ·Lunar and Planetary Science Conference ·Tibor Kremic, Gary W. Hunter, Philip G. Neudeck, David J. Spry, George E. Ponchak, Glenn M. Beheim, (unknown), Maximilian C. Scardelletti, John D. Wrbanek, (unknown), (unknown), (unknown)	4
12	Prolonged silicon carbide integrated circuit operation in Venus surface atmospheric conditions 2016 ·AIP Advances ·Philip G. Neudeck, Roger D. Meredith, Liang-Yü Chen, David J. Spry, (unknown), Gary W. Hunter	55
13	Experimental Durability Testing of 4H SiC JFET Integrated Circuit Technology at 727 C 2016 ·NASA Technical Reports Server (NASA) ·David J. Spry, (unknown), Liang-Yü Chen, Carl W. Chang, Dorothy Lukco, Glenn M. Beheim	2
14	4H-SiC JFET Multilayer Integrated Circuit Technologies Tested up to 1000 K 2015 ·ECS Meeting Abstracts ·David J. Spry, (unknown), Liang-Yü Chen, Carl W. Chang, Dorothy Lukco, Glenn M. Beheim	1
15	High Temperature Capacitive Pressure Sensor Employing a SiC Based Ring Oscillator 2012 ·Materials science forum ·Roger D. Meredith, Philip G. Neudeck, George E. Ponchak, Glenn M. Beheim, Maximilian C. Scardelletti, Jennifer L. Jordan, Liangyu Chen, David J. Spry, Michael J. Krasowski, Gary W. Hunter	2
16	Packaging Technologies for 500°C SiC Electronics and Sensors 2012 ·Materials science forum ·(unknown), Wayne Johnson, Philip G. Neudeck, Glenn M. Beheim, David J. Spry, Roger D. Meredith, Gary W. Hunter	5
17	Prolonged 500 °C Operation of 6H-SiC JFET Integrated Circuitry 2009 ·Materials science forum ·Philip G. Neudeck, David J. Spry, Liangyu Chen, Carl W. Chang, Glenn M. Beheim, Robert S. Okojie, Laura J. Evans, Roger D. Meredith, (unknown), Michael J. Krasowski, Norman F. Prokop	13
18	CVD Growth of 3C‐SiC on 4H/6H Mesas 2006 ·Chemical Vapor Deposition ·Philip G. Neudeck, Andrew J. Trunek, David J. Spry, J. A. Powell, Hui Du, Marek Skowroński, (unknown), Michael Dudley	56
19	Step Free Surface Heteroepitaxy of 3C-SiC Layers on Patterned 4H/6H-SiC Mesas and Cantilevers 2004 ·Materials science forum ·Philip G. Neudeck, J. A. Powell, Andrew J. Trunek, David J. Spry	9
20	Comparative Growth Behavior of 3C-SiC Mesa Heterofilms with and without Extended Defects 2004 ·Materials science forum ·Andrew J. Trunek, Philip G. Neudeck, J. A. Powell, David J. Spry	6

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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