Pavel A. Ivanov

471 citations

45 papers · 374 indexed · h-index 12

Co-authors: M. E. Levinshteĭn John W. Palmour Anant Agarwal T. T. Mnatsakanov S. L. Rumyantsev S. N. Yurkov Mrinal K. Das Brett Hull
Topics: Silicon Carbide Semiconductor Technologies (36 papers)Semiconductor materials and interfaces (11 papers)Pulsed Power Technology Applications (10 papers)
Cited by: Electrical and Electronic Engineering Endocrinology Atomic and Molecular Physics, and Optics
Journals: Scientific Reports International Journal of Molecular Sciences Solid-State Electronics
Partner nations: Russia United States China

In The Last Decade

Pavel A. Ivanov

41 papers receiving 341 citations

Peers

Countries citing papers authored by Pavel A. Ivanov

Since Specialization

Citations

This map shows the geographic impact of Pavel A. Ivanov's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Pavel A. Ivanov with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Pavel A. Ivanov more than expected).

Fields of papers citing papers by Pavel A. Ivanov

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Pavel A. Ivanov. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Pavel A. Ivanov. The network helps show where Pavel A. Ivanov may publish in the future.

Co-authorship network of co-authors of Pavel A. Ivanov

This figure shows the co-authorship network connecting the top 25 collaborators of Pavel A. Ivanov. A scholar is included among the top collaborators of Pavel A. Ivanov based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Pavel A. Ivanov. Pavel A. Ivanov is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Issues in improving the quality of strategic planning system in the Russian Federation regions 2023 ·Pavel A. Ivanov	0
2	Prospects of abrasive flow machining of the inner surface of bended tubular parts of rectangular section 2021 ·Pavel A. Ivanov,(unknown)	1
3	High-throughput LPS profiling as a tool for revealing of bacteriophage infection strategies 2019 ·Scientific Reports ·Eugene E. Kulikov,Alla K. Golomidova,Nikolai S. Prokhorov,Pavel A. Ivanov,Andrey V. Letarov	35
4	Research of dynamic goniometer system for direction measurements 2019 ·Optical Engineering ·(unknown),(unknown),Pavel A. Ivanov,(unknown),(unknown),(unknown),Vladimir Y. Venediktov	2
5	Escherichia coli bacteriophage Gostya9, representing a new species within the genus T5virus 2018 ·Archives of Virology ·Alla K. Golomidova,Eugene E. Kulikov,Vladislav V. Babenko,Pavel A. Ivanov,Nikolai S. Prokhorov,Andrey V. Letarov	7
6	SiC-based electronics (100th anniversary of the Ioffe Institute) 2018 ·Uspekhi Fizicheskih Nauk ·A. А. Lebedev,Pavel A. Ivanov,M. E. Levinshteĭn,(unknown),(unknown),A. N. Anisimov,P. G. Baranov	1
7	Systematization of approaches to the interpretation of the concept of financial capacity of a territorial unit in the context of financial security 2015 ·Russian Journal of Entrepreneurship ·Pavel A. Ivanov	0
8	Silicon Carbide and Related Materials 2012 2013 ·Trans Tech Publications Ltd. eBooks ·A. А. Lebedev,(unknown),Pavel A. Ivanov,(unknown)	4
9	Subnanosecond Semiconductor Opening Switch Based on 4H-SiC Junction Diode 2013 ·Materials science forum ·Pavel A. Ivanov,I. V. Grekhov	5
10	Reverse Leakage Currents in High-Voltage 4H-SiC Schottky Diodes 2013 ·Materials science forum ·Pavel A. Ivanov,I. V. Grekhov,А. С. Потапов,(unknown),O. I. Kon’kov,(unknown)	2
11	Bipolar Degradation of High Voltage 4H-SiC <i>p-i-n</i> Diodes in Pulse Regime 2011 ·Materials science forum ·M. E. Levinshteĭn,Pavel A. Ivanov,John W. Palmour,Anant Agarwal,Mrinal K. Das	7
12	Analysis of Forward Current-Voltage Characteristics of Non-Ideal Ti/4H-SiC Schottky Barriers 2009 ·Materials science forum ·Pavel A. Ivanov,А. С. Потапов,(unknown)	1
13	Self-Heating of 4H-SiC PiN Diodes at High Current Densities 2008 ·Materials science forum ·M. E. Levinshteĭn,T. T. Mnatsakanov,Pavel A. Ivanov,John W. Palmour,Mrinal K. Das,Brett Hull	3
14	Steady state self-heating and dc current–voltage characteristics of high-voltage 4H-SiC p+–n–n+ rectifier diodes 2007 ·Solid-State Electronics ·M. E. Levinshteĭn,T. T. Mnatsakanov,Pavel A. Ivanov,John W. Palmour,Mrinal K. Das,Brett Hull	6
15	High-Temperature (up to 800 K) Operation of 6-kV 4H-SiC Junction Diodes 2006 ·Materials science forum ·M. E. Levinshteĭn,Pavel A. Ivanov,(unknown),(unknown),John W. Palmour,Mrinal K. Das,Brett Hull	4
16	Steady-state and transient characteristics of 10 kV 4H-SiC diodes 2004 ·Solid-State Electronics ·M. E. Levinshteĭn,T. T. Mnatsakanov,Pavel A. Ivanov,Ranbir Singh,John W. Palmour,S. N. Yurkov	30
17	On the homogeneity of the turn-on process in high-voltage 4H–SiC thyristors 2004 ·Solid-State Electronics ·M. E. Levinshteĭn,Pavel A. Ivanov,Anant Agarwal,John W. Palmour	4
18	Fast switch-off of high voltage 4H–SiC npn bipolar junction transistor from deep saturation regime 2003 ·Solid-State Electronics ·M. E. Levinshteĭn,Pavel A. Ivanov,Anant Agarwal,John W. Palmour	4
19	Reverse Current Recovery in 4H-SiC Diodes with n- and p-Base 2003 ·Materials science forum ·Pavel A. Ivanov,I. V. Grekhov,Andrey O. Konstantinov,(unknown)	0
20	Temperature dependence of turn-on processes in 4H–SiC thyristors 2001 ·Solid-State Electronics ·M. E. Levinshteĭn,T. T. Mnatsakanov,Pavel A. Ivanov,Anant Agarwal,John W. Palmour,S. L. Rumyantsev,(unknown),S. N. Yurkov	26

About Pavel A. Ivanov

Pavel A. Ivanov is a scholar working on Electrical and Electronic Engineering, Development and Control and Systems Engineering, having authored 45 papers that have together received 374 indexed citations. Recurring topics across this work include Silicon Carbide Semiconductor Technologies (36 papers), Semiconductor materials and interfaces (11 papers) and Pulsed Power Technology Applications (10 papers). The work is most often cited by research in Electrical and Electronic Engineering (312 citations), Endocrinology (17 citations) and Atomic and Molecular Physics, and Optics (96 citations). Pavel A. Ivanov has collaborated with scholars based in Russia, United States and China. Frequent co-authors include M. E. Levinshteĭn, John W. Palmour, Anant Agarwal, T. T. Mnatsakanov, S. L. Rumyantsev, S. N. Yurkov, Mrinal K. Das, Brett Hull, Andrey V. Letarov and Alla K. Golomidova. Their work appears in journals such as Scientific Reports, International Journal of Molecular Sciences and Solid-State Electronics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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