I. D. Goepfert

779 total citations
10 papers, 660 citations indexed

About

I. D. Goepfert is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, I. D. Goepfert has authored 10 papers receiving a total of 660 indexed citations (citations by other indexed papers that have themselves been cited), including 9 papers in Condensed Matter Physics, 5 papers in Atomic and Molecular Physics, and Optics and 5 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in I. D. Goepfert's work include GaN-based semiconductor devices and materials (9 papers), Semiconductor Quantum Structures and Devices (5 papers) and Ga2O3 and related materials (5 papers). I. D. Goepfert is often cited by papers focused on GaN-based semiconductor devices and materials (9 papers), Semiconductor Quantum Structures and Devices (5 papers) and Ga2O3 and related materials (5 papers). I. D. Goepfert collaborates with scholars based in United States and Netherlands. I. D. Goepfert's co-authors include E. Fred Schubert, W. Grieshaber, Joan M. Redwing, E. F. Schubert, A. Osinsky, P. Norris, R. F. Karlicek, C. A. Tran, M. Schurman and N. N. Faleev and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

I. D. Goepfert

10 papers receiving 644 citations

Peers

I. D. Goepfert

CMP

EOMM

MC

EEE

AMPO

Munehiro Kato Japan

Anand V. Sampath United States

Tanya Paskova United States

V. Schwegler Germany

P. Schley Germany

B. Monemar Sweden

A. S. Zubrilov Russia

C. Roder Germany

Maosheng Hao Japan

B. Schineller Germany

Munehiro Kato Japan

I. D. Goepfert

447 ×0.8

CMP

176 ×0.5

EOMM

323 ×1.1

MC

202 ×0.9

EEE

217 ×1.1

AMPO

Citations per year, relative to I. D. Goepfert I. D. Goepfert (= 1×) peers Munehiro Kato

Countries citing papers authored by I. D. Goepfert

Since Specialization

Citations

This map shows the geographic impact of I. D. Goepfert's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by I. D. Goepfert with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites I. D. Goepfert more than expected).

Fields of papers citing papers by I. D. Goepfert

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by I. D. Goepfert. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by I. D. Goepfert. The network helps show where I. D. Goepfert may publish in the future.

Co-authorship network of co-authors of I. D. Goepfert

This figure shows the co-authorship network connecting the top 25 collaborators of I. D. Goepfert. A scholar is included among the top collaborators of I. D. Goepfert based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with I. D. Goepfert. I. D. Goepfert is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

10 of 10 papers shown

1.

Goepfert, I. D., E. Fred Schubert, A. Osinsky, P. Norris, & N. N. Faleev. (2000). Experimental and theoretical study of acceptor activation and transport properties in p-type AlxGa1−xN/GaN superlattices. Journal of Applied Physics. 88(4). 2030–2038. 70 indexed citations

2.

Stocker, D. A., I. D. Goepfert, E. Fred Schubert, K. S. Boutros, & Joan M. Redwing. (2000). Crystallographic Wet Chemical Etching of p-Type GaN. Journal of The Electrochemical Society. 147(2). 763–763. 17 indexed citations

3.

Goepfert, I. D., E. Fred Schubert, A. Osinsky, & P. Norris. (2000). Efficient Acceptor Activation in Al_xGa_1−xN/GaN Doped Superlattices. MRS Internet Journal of Nitride Semiconductor Research. 5(S1). 329–335. 1 indexed citations

4.

Goepfert, I. D., E. Fred Schubert, A. Osinsky, & P. Norris. (1999). Demonstration of efficient p-type doping in Al _x Ga _1–x N/GaNsuperlattice structures. Electronics Letters. 35(13). 1109–1111. 32 indexed citations

5.

Schubert, E. Fred, I. D. Goepfert, W. Grieshaber, & Joan M. Redwing. (1997). Optical properties of Si-doped GaN. Applied Physics Letters. 71(7). 921–923. 185 indexed citations

6.

Schubert, E. F., I. D. Goepfert, & Joan M. Redwing. (1997). Evidence of compensating centers as origin of yellow luminescence in GaN. Applied Physics Letters. 71(22). 3224–3226. 71 indexed citations

7.

Vaudo, R. P., et al.. (1996). Characteristics of light-emitting diodes based on GaN p-n junctions grown by plasma-assisted molecular beam epitaxy. Journal of Applied Physics. 79(5). 2779–2783. 52 indexed citations

8.

Grieshaber, W., E. Fred Schubert, I. D. Goepfert, et al.. (1996). Competition between band gap and yellow luminescence in GaN and its relevance for optoelectronic devices. Journal of Applied Physics. 80(8). 4615–4620. 114 indexed citations

9.

Schubert, E. Fred, W. Grieshaber, & I. D. Goepfert. (1996). Enhancement of deep acceptor activation in semiconductors by superlattice doping. Applied Physics Letters. 69(24). 3737–3739. 111 indexed citations

10.

Korakakis, D., et al.. (1995). Growth and Doping of GaN Directly on 6H-SiC by MBE. MRS Proceedings. 395. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact