B. Monemar

617 total citations
27 papers, 494 citations indexed

About

B. Monemar is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Electrical and Electronic Engineering. According to data from OpenAlex, B. Monemar has authored 27 papers receiving a total of 494 indexed citations (citations by other indexed papers that have themselves been cited), including 20 papers in Condensed Matter Physics, 14 papers in Atomic and Molecular Physics, and Optics and 11 papers in Electrical and Electronic Engineering. Recurrent topics in B. Monemar's work include GaN-based semiconductor devices and materials (20 papers), Semiconductor Quantum Structures and Devices (13 papers) and Ga2O3 and related materials (9 papers). B. Monemar is often cited by papers focused on GaN-based semiconductor devices and materials (20 papers), Semiconductor Quantum Structures and Devices (13 papers) and Ga2O3 and related materials (9 papers). B. Monemar collaborates with scholars based in Sweden, Germany and Japan. B. Monemar's co-authors include T. Paskova, Vanya Darakchieva, Akira Usui, A. Kasic, Г. Позина, J. P. Bergman, Tania Paskova, M. Schubert, Weimin Chen and D. Siche and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

B. Monemar

27 papers receiving 480 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
B. Monemar Sweden 10 385 249 220 172 154 27 494
C. Roder Germany 11 472 1.2× 344 1.4× 264 1.2× 129 0.8× 145 0.9× 25 580
Shih-Wei Feng Taiwan 10 372 1.0× 224 0.9× 161 0.7× 187 1.1× 105 0.7× 15 446
Yen-Sheng Lin Taiwan 7 358 0.9× 229 0.9× 156 0.7× 179 1.0× 116 0.8× 9 425
S. Fritze Germany 8 372 1.0× 222 0.9× 227 1.0× 127 0.7× 220 1.4× 10 476
S. K. Lee South Korea 10 504 1.3× 241 1.0× 270 1.2× 144 0.8× 251 1.6× 13 552
Tommy Ive Sweden 13 277 0.7× 426 1.7× 205 0.9× 205 1.2× 252 1.6× 32 615
Anand V. Sampath United States 13 469 1.2× 217 0.9× 297 1.4× 149 0.9× 182 1.2× 69 553
A. Chandolu United States 13 276 0.7× 219 0.9× 172 0.8× 94 0.5× 184 1.2× 21 427
D. A. Stocker United States 8 359 0.9× 191 0.8× 169 0.8× 103 0.6× 160 1.0× 11 393

Countries citing papers authored by B. Monemar

Since Specialization
Citations

This map shows the geographic impact of B. Monemar's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. Monemar with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. Monemar more than expected).

Fields of papers citing papers by B. Monemar

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. Monemar. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. Monemar. The network helps show where B. Monemar may publish in the future.

Co-authorship network of co-authors of B. Monemar

This figure shows the co-authorship network connecting the top 25 collaborators of B. Monemar. A scholar is included among the top collaborators of B. Monemar based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with B. Monemar. B. Monemar is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Paskova, T., B. Monemar, T. Paskova, et al.. (2008). Photoluminescence study of near-surface GaN/AlN superlattices. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6894. 68940G–68940G. 2 indexed citations
2.
Darakchieva, Vanya, B. Monemar, & Akira Usui. (2007). On the lattice parameters of GaN. Applied Physics Letters. 91(3). 98 indexed citations
3.
Hemmingsson, Carl, T. Paskova, Г. Позина, et al.. (2006). Growth of bulk GaN in a vertical hydride vapour phase epitaxy reactor. Superlattices and Microstructures. 40(4-6). 205–213. 26 indexed citations
4.
Paskova, T., S. Figge, D. Hommel, et al.. (2006). Microscopic emission properties of nonpolar a -plane GaN grown by HVPE. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6121. 612106–612106. 6 indexed citations
5.
Monemar, B., T. Paskova, & A. Kasic. (2005). Optical properties of InN—the bandgap question. Superlattices and Microstructures. 38(1). 38–56. 79 indexed citations
6.
Darakchieva, Vanya, et al.. (2004). Structural characteristics and lattice parameters of hydride vapor phase epitaxial GaN free-standing quasisubstrates. Journal of Applied Physics. 97(1). 28 indexed citations
7.
Darakchieva, Vanya, T. Paskova, E. Valcheva, et al.. (2004). Deformation potentials of the E1(TO) and E2 modes of InN. Applied Physics Letters. 84(18). 3636–3638. 38 indexed citations
8.
Arnaudov, B., et al.. (2003). Effect of carrier concentration on the microhardness of GaN layers. Journal of Materials Science Materials in Electronics. 14(10-12). 771–772. 2 indexed citations
9.
Shubina, T. V., et al.. (2003). Phonon-assisted exciton luminescence in GaN layers grown by MBE and chloride-hydride VPE. Semiconductors. 37(5). 532–536. 6 indexed citations
10.
Buyanova, I. A., Ivan G. Ivanov, B. Monemar, et al.. (2002). Tunable laser spectroscopy of spin injection in ZnMnSe/ZnCdSe quantum structures. Applied Physics Letters. 81(12). 2196–2198. 20 indexed citations
11.
Valakh, M. Ya., С. В. Иванов, N. Mestres, et al.. (2002). Optical investigation of CdSe/ZnSe quantum nanostructures. Semiconductor Science and Technology. 17(2). 173–177. 3 indexed citations
12.
Valcheva, E., T. Paskova, Per O. Å. Persson, & B. Monemar. (2002). Nanopipes in Thick GaN Films Grown at High Growth Rate. physica status solidi (a). 194(2). 532–535. 4 indexed citations
13.
Ivanov, Ivan G., T. Egilsson, Anne Henry, B. Monemar, & Erik Janzén. (2001). Resonant sharp hot free-exciton luminescence in 6H- and 4H-SiC due to inhibited exciton-phonon interaction. Physical review. B, Condensed matter. 64(8). 8 indexed citations
14.
Paskova, T., et al.. (2001). Internal Structure of Free Excitons in GaN. physica status solidi (b). 228(2). 467–470. 3 indexed citations
15.
Hai, Pham Nam, Weimin Chen, I. A. Buyanova, et al.. (2000). Ga-related defect in as-grown Zn-doped GaN: An optically detected magnetic resonance study. Physical review. B, Condensed matter. 62(16). R10607–R10609. 8 indexed citations
16.
Wagner, Mt., I. A. Buyanova, Weimin Chen, et al.. (2000). Magneto-optical studies of the 0.88-eV photoluminescence emission in electron-irradiated GaN. Physical review. B, Condensed matter. 62(24). 16572–16577. 6 indexed citations
17.
Sernelius, Bo E., et al.. (2000). Many-body effects in highlyp-type modulation-dopedGaAs/AlxGa1−xAsquantum wells. Physical review. B, Condensed matter. 61(4). 2794–2798. 9 indexed citations
18.
Позина, Г., et al.. (1999). Bound exciton dynamics in GaN grown by hydride vapor-phase epitaxy. Applied Physics Letters. 75(26). 4124–4126. 43 indexed citations
19.
Zhao, Q. X., B. Monemar, T. Lundström, et al.. (1994). Magnetic-field-induced localization effects on radiative recombination in GaAs/AlxGa1−xAs heterostructures. Physical review. B, Condensed matter. 50(11). 7514–7517. 5 indexed citations
20.
Monemar, B., et al.. (1986). Electronic properties of an electron-attractive complex neutral defect in GaAs. Physical review. B, Condensed matter. 33(6). 4424–4427. 12 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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