R. J. Hauenstein

963 citations

37 papers · 797 indexed · h-index 16

Condensed Matter Physics top 2%
Atomic and Molecular Physics, and Optics top 5%
Electrical and Electronic Engineering top 10%
Materials Chemistry
Electronic, Optical and Magnetic Materials top 10%

Co-authors: T. C. McGill W. Shan B. Goldenberg Mark Osteen R. M. Feenstra W. G. Perry M. D. Bremser A. J. Fischer
Topics: GaN-based semiconductor devices and materials (19 papers)Semiconductor Quantum Structures and Devices (15 papers)Semiconductor materials and devices (12 papers)
Cited by: Condensed Matter Physics Atomic and Molecular Physics, and Optics Electronic, Optical and Magnetic Materials
Journals: Physical review. B, Condensed matter Applied Physics Letters Journal of Applied Physics
Partner nations: United States Spain Switzerland

In The Last Decade

R. J. Hauenstein

37 papers receiving 766 citations

Peers

Countries citing papers authored by R. J. Hauenstein

Since Specialization

Citations

This map shows the geographic impact of R. J. Hauenstein's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. J. Hauenstein with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. J. Hauenstein more than expected).

Fields of papers citing papers by R. J. Hauenstein

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. J. Hauenstein. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. J. Hauenstein. The network helps show where R. J. Hauenstein may publish in the future.

Co-authorship network of co-authors of R. J. Hauenstein

This figure shows the co-authorship network connecting the top 25 collaborators of R. J. Hauenstein. A scholar is included among the top collaborators of R. J. Hauenstein based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. J. Hauenstein. R. J. Hauenstein is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	High Reflectivity AlGaN/AlN DBR Mirrors Grown by PA‐MBE 2002 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·F. Fedler,(unknown),R. J. Hauenstein,Arturo Ponce,Sergio I. Molina,O. Semchinova,J. Aderhold,J. Graul	6
2	Effect of High Temperature Single and Multiple AlN Intermediate Layers on N-polar and Ga-polar GaN Grown by Molecular Beam Epitaxy 2001 ·MRS Proceedings ·F. Fedler,J. Stemmer,R. J. Hauenstein,T. Rotter,Ana M. Sánchez,Arturo Ponce,Sergio I. Molina,D. Mistele,(unknown),O. Semchinova,J. Aderhold,J. Graul	1
3	High resolution x-ray analysis of pseudomorphic InGaN/GaN multiple quantum wells: Influence of Si doping concentration 1999 ·Journal of Applied Physics ·Yong‐Hoon Cho,F. Fedler,R. J. Hauenstein,(unknown),J. J. Song,S. Keller,Umesh K. Mishra,Steven P. DenBaars	34
4	Effect of substrate temperature and V/III flux ratio on In incorporation for InGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy 1999 ·Applied Physics Letters ·Mark Osteen,F. Fedler,R. J. Hauenstein	15
5	Intrinsic exciton transitions in GaN 1998 ·Journal of Applied Physics ·W. Shan,A. J. Fischer,Sung‐Ho Hwang,B. D. Little,R. J. Hauenstein,X. C. Xie,J. J. Song,(unknown),B. Goldenberg,R. D. Horning,S. Krishnankutty,W. G. Perry,M. D. Bremser,R. F. Davis	35
6	Nanometer-scale studies of nitride/arsenide heterostructures produced by nitrogen plasma exposure of GaAs 1997 ·Journal of Electronic Materials ·R. S. Goldman,R. M. Feenstra,B. G. Briner,Mark Osteen,R. J. Hauenstein	3
7	Atomic-scale structure and electronic properties of GaN/GaAs superlattices 1996 ·Applied Physics Letters ·R. S. Goldman,R. M. Feenstra,B. G. Briner,Mark Osteen,R. J. Hauenstein	45
8	Kinetic modeling of microscopic processes during electron cyclotron resonance microwave plasma-assisted molecular beam epitaxial growth of GaN/GaAs-based heterostructures 1996 ·Applied Physics Letters ·Zvonimir Bandić,R. J. Hauenstein,Mark Osteen,T. C. McGill	16
9	Microscopic processes during electron cyclotron resonance microwave nitrogen plasma-assisted molecular beam epitaxial growth of GaN/GaAs heterostructures: Experiments and kinetic modeling 1996 ·Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Zvonimir Bandić,T. C. McGill,R. J. Hauenstein,Mark Osteen	4
10	Strain effects on excitonic transitions in GaN: Deformation potentials 1996 ·Physical review. B, Condensed matter ·W. Shan,R. J. Hauenstein,A. J. Fischer,J. J. Song,W. G. Perry,M. D. Bremser,R. F. Davis,B. Goldenberg	141
11	Schottky-based band lineups for refractory semiconductors 1995 ·Applied Physics Letters ·(unknown),J. O. McCaldin,(unknown),T. C. McGill,R. J. Hauenstein	52
12	Observation of a (2×8) surface reconstruction on Si1−xGex alloys grown on (100) Si by molecular-beam epitaxy 1991 ·Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·E. T. Croke,R. J. Hauenstein,Tao Fu,T. C. McGill	9
13	High resolution secondary ion mass spectrometry depth profiling using continuous sample rotation and its application to superlattice and delta-doped sample analysis 1990 ·Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·Eun‐Hee Cirlin,John J. Vajo,(unknown),R. J. Hauenstein	26
14	Evidence of segregation in (100) strained Si1−xGex alloys grown at low temperature by molecular beam epitaxy 1990 ·Applied Physics Letters ·E. T. Croke,T. C. McGill,R. J. Hauenstein,R. H. Miles	25
15	Dependence of critical thickness on growth temperature in GexSi1−x/Si superlattices 1988 ·Applied Physics Letters ·R. H. Miles,T. C. McGill,P. P. Chow,(unknown),R. J. Hauenstein,C. W. Nieh,M. D. Strathman	22
16	Growth of superconducting V3Si on Si by molecular beam epitaxial techniques 1988 ·Applied Physics Letters ·E. T. Croke,R. J. Hauenstein,T. C. McGill	4
17	Accommodation of lattice mismatch in GexSi1−x/Si superlattices 1988 ·Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ·R. H. Miles,P. P. Chow,(unknown),R. J. Hauenstein,O. J. Marsh,C. W. Nieh,M. D. Strathman,T. C. McGill	2
18	Vibrational modes of oxygen in GaP including nearest-neighbor interactions 1983 ·Physical review. B, Condensed matter ·R. M. Feenstra,R. J. Hauenstein,T. C. McGill	17
19	Isotope shifts for the P, Q, R lines in indium-doped silicon 1983 ·Solid State Communications ·T. E. Schlesinger,R. J. Hauenstein,R. M. Feenstra,T. C. McGill	13
20	Dislocation structures in cyclically strained aluminium-copper alloy containing θ′ precipitates 1981 ·Scripta Metallurgica ·R. J. Hauenstein,(unknown)	2

About R. J. Hauenstein

R. J. Hauenstein is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Structural Biology, having authored 37 papers that have together received 797 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (19 papers), Semiconductor Quantum Structures and Devices (15 papers) and Semiconductor materials and devices (12 papers). The work is most often cited by research in Condensed Matter Physics (488 citations), Atomic and Molecular Physics, and Optics (448 citations) and Electronic, Optical and Magnetic Materials (217 citations). R. J. Hauenstein has collaborated with scholars based in United States, Spain and Switzerland. Frequent co-authors include T. C. McGill, W. Shan, B. Goldenberg, Mark Osteen, R. M. Feenstra, W. G. Perry, M. D. Bremser, A. J. Fischer, R. F. Davis and J. J. Song. Their work appears in journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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