H. M. Ng

2.1k total citations
47 papers, 1.8k citations indexed

About

H. M. Ng is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, H. M. Ng has authored 47 papers receiving a total of 1.8k indexed citations (citations by other indexed papers that have themselves been cited), including 42 papers in Condensed Matter Physics, 20 papers in Atomic and Molecular Physics, and Optics and 17 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in H. M. Ng's work include GaN-based semiconductor devices and materials (42 papers), Semiconductor Quantum Structures and Devices (18 papers) and Ga2O3 and related materials (17 papers). H. M. Ng is often cited by papers focused on GaN-based semiconductor devices and materials (42 papers), Semiconductor Quantum Structures and Devices (18 papers) and Ga2O3 and related materials (17 papers). H. M. Ng collaborates with scholars based in United States, Taiwan and Germany. H. M. Ng's co-authors include T. D. Moustakas, D. Doppalapudi, Nils Weimann, L.F. Eastman, Claire Gmachl, S. N. G. Chu, S. N. G. Chu, E. Iliopoulos, D. Korakakis and Joerg Heber and has published in prestigious journals such as Applied Physics Letters, Journal of Crystal Growth and Electronics Letters.

In The Last Decade

H. M. Ng

47 papers receiving 1.7k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
H. M. Ng United States 20 1.3k 800 738 729 675 47 1.8k
A. Dussaigne France 28 1.4k 1.1× 736 0.9× 627 0.8× 643 0.9× 680 1.0× 74 1.8k
R. Averbeck Germany 19 1.2k 0.9× 617 0.8× 596 0.8× 538 0.7× 506 0.7× 39 1.5k
B. El Jani Tunisia 22 1.1k 0.8× 790 1.0× 519 0.7× 952 1.3× 896 1.3× 147 1.8k
A. Abare United States 21 2.0k 1.5× 823 1.0× 790 1.1× 641 0.9× 1.1k 1.6× 46 2.2k
M. Siekacz Poland 24 1.4k 1.1× 499 0.6× 456 0.6× 547 0.8× 918 1.4× 113 1.6k
S. B. Fleischer United States 12 1.0k 0.8× 446 0.6× 583 0.8× 442 0.6× 673 1.0× 20 1.4k
Ronald A. Arif United States 16 1.6k 1.2× 730 0.9× 559 0.8× 550 0.8× 943 1.4× 40 1.8k
M. Laügt France 27 1.8k 1.3× 1.3k 1.6× 1.2k 1.6× 820 1.1× 749 1.1× 67 2.5k
J. Menniger Germany 13 1.6k 1.2× 1.1k 1.4× 785 1.1× 500 0.7× 817 1.2× 26 2.0k
Yoichi Yamada Japan 28 1.5k 1.1× 1.3k 1.6× 912 1.2× 926 1.3× 1.2k 1.7× 161 2.4k

Countries citing papers authored by H. M. Ng

Since Specialization
Citations

This map shows the geographic impact of H. M. Ng's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. M. Ng with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. M. Ng more than expected).

Fields of papers citing papers by H. M. Ng

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. M. Ng. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. M. Ng. The network helps show where H. M. Ng may publish in the future.

Co-authorship network of co-authors of H. M. Ng

This figure shows the co-authorship network connecting the top 25 collaborators of H. M. Ng. A scholar is included among the top collaborators of H. M. Ng based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H. M. Ng. H. M. Ng is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Kwo, J., et al.. (2008). GaN on Si with nm-thick single-crystal Sc2O3 as a template using molecular beam epitaxy. Journal of Crystal Growth. 311(7). 2006–2009. 11 indexed citations
2.
Ng, H. M., et al.. (2004). State-of-the-art program on compound semiconductors XLI and nitride and wide bandgap semiconductors for sensors, photonics, and electronics V : proceedings of the international symposia. Electrochemical Society eBooks. 1 indexed citations
3.
Chen, Gang, Ronen Rapaport, Oleg Mitrofanov, Claire Gmachl, & H. M. Ng. (2003). Measurement of optical nonlinearities from intersubband transitions in GaN/AlGaN quantum wells at 1.5 μm. physica status solidi (b). 240(2). 384–387. 10 indexed citations
4.
Zhong, Jian, Sriram Muthukumar, Y. Chen, et al.. (2003). Ga-doped ZnO single-crystal nanotips grown on fused silica by metalorganic chemical vapor deposition. Applied Physics Letters. 83(16). 3401–3403. 149 indexed citations
5.
Hsu, Julia W. P., F. Schrey, & H. M. Ng. (2003). Spatial distribution of yellow luminescence related deep levels in GaN. Applied Physics Letters. 83(20). 4172–4174. 17 indexed citations
6.
Gmachl, Claire, et al.. (2003). Ultrafast intersubband transitions at λ ∼ 1.35-1.55 μm in GaN/AlGaN multiple quantum wells. 38. 27–27. 1 indexed citations
7.
Vaschenko, G., et al.. (2002). Nonlinear macroscopic polarization in GaN/AlxGa1−xN quantum wells. Applied Physics Letters. 80(22). 4211–4213. 23 indexed citations
8.
Hsu, Julia W. P., H. M. Ng, A. M. Sergent, & S. N. G. Chu. (2002). Scanning Kelvin force microscopy imaging of surface potential variations near threading dislocations in GaN. Applied Physics Letters. 81(19). 3579–3581. 42 indexed citations
9.
Moustakas, T. D., E. Iliopoulos, Anand V. Sampath, et al.. (2001). Growth and device applications of III-nitrides by MBE. Journal of Crystal Growth. 227-228. 13–20. 42 indexed citations
10.
Ng, H. M., S. N. G. Chu, S.V. Frolov, A.Y. Cho, & Claire Gmachl. (2001). Sub-picosecond intersub-band electron scattering times in GaN/AlGaN superlattices grown by molecular beam epitaxy. IEE Proceedings - Optoelectronics. 148(5). 215–218. 3 indexed citations
11.
Hong, M., K.A. Anselm, J. Kwo, et al.. (2000). Properties of Ga2O3(Gd2O3)/GaN metal–insulator–semiconductor diodes. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 18(3). 1453–1456. 57 indexed citations
12.
Ng, H. M. & T. D. Moustakas. (2000). Group-III nitride VCSEL structures grown by molecular beam epitaxy. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 3944. 22–22. 1 indexed citations
13.
Ng, H. M., T. D. Moustakas, & S. N. G. Chu. (2000). High reflectivity and broad bandwidth AlN/GaN distributed Bragg reflectors grown by molecular-beam epitaxy. Applied Physics Letters. 76(20). 2818–2820. 144 indexed citations
14.
Singh, R., Charles R. Eddy, T. D. Moustakas, & H. M. Ng. (2000). High Density Plasma Etching Damage Effects on Contacts to n-GaN. MRS Proceedings. 639. 1 indexed citations
15.
Ng, H. M., et al.. (2000). Molecular beam epitaxy of GaN/AlxGa1−xN superlattices for 1.52–4.2μm intersubband transitions. Journal of Crystal Growth. 220(4). 432–438. 45 indexed citations
16.
Ng, H. M., D. Doppalapudi, T. D. Moustakas, Nils Weimann, & L.F. Eastman. (1998). The role of dislocation scattering in n-type GaN films. Applied Physics Letters. 73(6). 821–823. 373 indexed citations
17.
Iliopoulos, E., D. Doppalapudi, H. M. Ng, & T. D. Moustakas. (1997). Near Band Gap Photoluminescence Broadening In n-Gan Films. MRS Proceedings. 482. 2 indexed citations
18.
Moustakas, T. D., R. Singh, D. Korakakis, et al.. (1997). Phase Separation and Atomic Ordering in AlGaInN Alloys. MRS Proceedings. 482. 2 indexed citations
19.
Korakakis, D., et al.. (1996). Growth and Doping of AlGaN Alloys by ECR-assisted MBE. MRS Internet Journal of Nitride Semiconductor Research. 1. 14 indexed citations
20.
Korakakis, D., et al.. (1995). Growth and Doping of GaN Directly on 6H-SiC by MBE. MRS Proceedings. 395. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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