A. Kuliev

734 citations

20 papers · 604 indexed · h-index 11

Impact in

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 18
- GaN-based semiconductor devices and materials 18
Electronic, Optical and Magnetic Materials 8
- Ga2O3 and related materials 8

Co-authors: I. Adesida V. Kumar R. Schwindt G. Simin M. Asif Khan Wu Lu J. Yang Tsuyoshi Tanaka
Journals: Electronics Letters (6 papers)Solid-State Electronics (3 papers)IEEE Electron Device Letters (2 papers)IEEE Microwave and Wireless Components Letters (2 papers)Japanese Journal of Applied Physics (1 paper)
Partner nations: United States South Korea Japan

In The Last Decade

A. Kuliev

20 papers receiving 557 citations

Peers

Countries citing papers authored by A. Kuliev

Since Specialization

Citations

This map shows the geographic impact of A. Kuliev's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Kuliev with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Kuliev more than expected).

Fields of papers citing papers by A. Kuliev

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Kuliev. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Kuliev. The network helps show where A. Kuliev may publish in the future.

Co-authorship network

The 25 scholars most cited alongside A. Kuliev, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with A. Kuliev Line = papers co-authored together A. Kuliev links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Short-Channel AlGaN/GaN Field-Plated High-Electron-Mobility Transistors for X-Band High Power Operation Japanese Journal of Applied Physics ·Jong Wook Lee, A. Kuliev, I. Adesida	2008	4
2	GaN electronics with high electron mobility transistors I. Adesida, V. Kumar, Jolanta Martyncevienė, A. Kuliev, R. Schwindt, 玉江山邨	2004	1
3	Microwave noise performances of AlGaN/GaN HEMTs on semi-insulating 6H-SiC substrates Electronics Letters ·Jeri Wohnhas, V. Kumar, R. Schwindt, A. Kuliev, R. Birkhahn, D. Gotthold, Shiping Guo, Ida M Fortin, P. Harston	2004	9
4	AlGaN/InGaN HEMTs for RF current collapse suppression Electronics Letters ·玉江山邨, V. Kumar, R. Schwindt, A. Kuliev, I. Adesida, A. M. Dabiran, A. M. Wowchak, P. P. Chow, S.P. Mishra	2004	27
5	Microwave noise characteristics of AlGaN/GaN HEMTs on SiC substrates for broad-band low-noise amplifiers IEEE Microwave and Wireless Components Letters ·Taro Saiki, A. Kuliev, V. Kumar, R. Schwindt, I. Adesida	2004	57
6	Characterisation of iridium Schottky contacts on n -Al _x Ga _{1− x} N Electronics Letters ·V. Kumar, D. Selvanathan, A. Kuliev, Marissa Litwin, J.S. Flynn, I. Adesida	2003	26
7	High performance 0.25 µm gate-length AlGaN/GaN HEMTs on 6H-SiC with power density of 6.7 W/mm at 18 GHz Electronics Letters ·V. Kumar, Jeri Wohnhas, A. Kuliev, Özgür Aktaş, R. Schwindt, R. Birkhahn, D. Gotthold, Efrat Katz, Ida M Fortin, I. Adesida	2003	3
8	High performance 0.25 μm gate-length AlGaN/GaN HEMTs on sapphire with power density of over 4.5 W/mm at 20 GHz Solid-State Electronics ·V. Kumar, A. Kuliev, R. Schwindt, Intissar Tabsh Abou-Khadra, G. Simin, J. Yang, M. Asif Khan, I. Adesida	2003	31
9	Millimeter-wave high-power 0.25-/spl mu/m gate-length AlGaN/GaN HEMTs on SiC substrates IEEE Microwave and Wireless Components Letters ·R. Schwindt, V. Kumar, A. Kuliev, G. Simin, Jinwei Yang, M.A. Khan, Intissar Tabsh Abou-Khadra, I. Adesida	2003	8
10	0.15 μm gate-length AlGaN/GaN HEMTs with varying gate recess length Solid-State Electronics ·A. Kuliev, V. Kumar, R. Schwindt, D. Selvanathan, A. M. Dabiran, P. P. Chow, I. Adesida	2003	21
11	Effect of recess length on DC and RF performance of gate-recessed AlGaN/GaN HEMTs A. Kuliev, V. Kumar, R. Schwindt, D. Selvanathan, A. M. Dabiran, P. P. Chow, I. Adesida	2003	2
12	High transconductance enhancement-mode AlGaN/GaN HEMTs on SiC substrate Electronics Letters ·V. Kumar, A. Kuliev, Tsuyoshi Tanaka, Y. Otoki, I. Adesida	2003	85
13	60Co gamma radiation effects on DC, RF, and pulsed I–V characteristics of AlGaN/GaN HEMTs Solid-State Electronics ·Özgür Aktaş, A. Kuliev, V. Kumar, R. Schwindt, Eva M. Szegoe, Stephanie Seberson‟s, James F. Stubbins, I. Adesida	2003	82
14	High performance 0.25 μm gate-length AlGaN/GaN HEMTs on sapphire with transconductance of over 400 mS/mm Electronics Letters ·V. Kumar, Wu Lu, Farid Khan, R. Schwindt, A. Kuliev, G. Simin, J. Yang, M. Asif Khan, I. Adesida	2002	13
15	AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz IEEE Electron Device Letters ·V. Kumar, Wu Lu, R. Schwindt, A. Kuliev, G. Simin, J. Yang, M. Asif Khan, I. Adesida	2002	191
16	High-Performance AlGaN/GaN High Electron Mobility Transistors on SiC physica status solidi (a) ·V. Kumar, A. Kuliev, R. Schwindt, G. Simin, Jinwei Yang, M. Asif Khan, I. Adesida	2002	5
17	High performance 0.15 μm recessed gate AlGaN/GaN HEMTs on sapphire V. Kumar, Wu Lu, Farid Khan, R. Schwindt, A. Kuliev, Jinbo Yang, 杨佩昌, I. Adesida	2002	5
18	A study of on-state and off-state breakdown voltages in GaN MESFETs A. Kuliev, Mehak Viz, Wu Lu, E. L. Piner, S.R. Bahl, I. Adesida	2002	6
19	High performance 0.1 μm gate-length p-type SiGe MODFET's and MOS-MODFET's IEEE Transactions on Electron Devices ·Wu Lu, A. Kuliev, Steven J. Koester, Ayodeji Aladejebi, J. O. Chu, T.P. Ma, I. Adesida	2000	13
20	p-Type SiGe transistors with low gate leakage using SiN gate dielectric IEEE Electron Device Letters ·Wu Lu, X.W. Wang, R. Hammond, A. Kuliev, Steven J. Koester, J. O. Chu, K. Ismail, T.P. Ma, I. Adesida	1999	15

About A. Kuliev

A. Kuliev is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Infectious Diseases, having authored 20 papers that have together received 604 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (18 papers), Semiconductor materials and devices (9 papers), Radio Frequency Integrated Circuit Design (8 papers), Ga2O3 and related materials (8 papers), Silicon Carbide Semiconductor Technologies (7 papers), Advancements in Semiconductor Devices and Circuit Design (4 papers), Semiconductor Quantum Structures and Devices (4 papers) and Semiconductor materials and interfaces (1 paper). The work is most often cited by research in Condensed Matter Physics (540 citations), Electronic, Optical and Magnetic Materials (214 citations), Electrical and Electronic Engineering (470 citations), Atomic and Molecular Physics, and Optics (195 citations) and Materials Chemistry (95 citations). A. Kuliev has collaborated with scholars based in United States, South Korea and Japan. Frequent co-authors include I. Adesida, V. Kumar, R. Schwindt, G. Simin, M. Asif Khan, Wu Lu, J. Yang, Tsuyoshi Tanaka, Y. Otoki and Özgür Aktaş. Their work appears in journals such as Electronics Letters, Solid-State Electronics, IEEE Electron Device Letters, IEEE Microwave and Wireless Components Letters and Japanese Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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