Fu-Yen Jian

892 total citations
31 papers, 774 citations indexed

About

Fu-Yen Jian is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Biomedical Engineering. According to data from OpenAlex, Fu-Yen Jian has authored 31 papers receiving a total of 774 indexed citations (citations by other indexed papers that have themselves been cited), including 31 papers in Electrical and Electronic Engineering, 13 papers in Materials Chemistry and 3 papers in Biomedical Engineering. Recurrent topics in Fu-Yen Jian's work include Thin-Film Transistor Technologies (25 papers), Semiconductor materials and devices (22 papers) and Advancements in Semiconductor Devices and Circuit Design (10 papers). Fu-Yen Jian is often cited by papers focused on Thin-Film Transistor Technologies (25 papers), Semiconductor materials and devices (22 papers) and Advancements in Semiconductor Devices and Circuit Design (10 papers). Fu-Yen Jian collaborates with scholars based in Taiwan, Germany and United States. Fu-Yen Jian's co-authors include Shih-Cheng Chen, Ting-Chang Chang, Ting‐Chang Chang, Te-Chih Chen, Tien‐Yu Hsieh, Chia-Sheng Lin, Sheng-Yao Huang, Chih-Tsung Tsai, Ya‐Hsiang Tai and Geng-Wei Chang and has published in prestigious journals such as Applied Physics Letters, Journal of The Electrochemical Society and Materials Today.

In The Last Decade

Fu-Yen Jian

30 papers receiving 755 citations

Peers

Fu-Yen Jian
Brian Cobb Netherlands
Jang Yeon Kwon South Korea
Sungho Heo South Korea
Byung Seong Bae South Korea
Kwon‐Shik Park South Korea
Sungju Choi South Korea
Brian Cobb Netherlands
Fu-Yen Jian
Citations per year, relative to Fu-Yen Jian Fu-Yen Jian (= 1×) peers Brian Cobb

Countries citing papers authored by Fu-Yen Jian

Since Specialization
Citations

This map shows the geographic impact of Fu-Yen Jian's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Fu-Yen Jian with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Fu-Yen Jian more than expected).

Fields of papers citing papers by Fu-Yen Jian

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Fu-Yen Jian. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Fu-Yen Jian. The network helps show where Fu-Yen Jian may publish in the future.

Co-authorship network of co-authors of Fu-Yen Jian

This figure shows the co-authorship network connecting the top 25 collaborators of Fu-Yen Jian. A scholar is included among the top collaborators of Fu-Yen Jian based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Fu-Yen Jian. Fu-Yen Jian is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Chang, Geng-Wei, Ting‐Chang Chang, Tsung‐Ming Tsai, et al.. (2014). Temperature-Dependent Instability of Bias Stress in InGaZnO Thin-Film Transistors. IEEE Transactions on Electron Devices. 61(6). 2119–2124. 34 indexed citations
2.
Yang, Ya‐Liang, Tai-Fa Young, Ting‐Chang Chang, et al.. (2013). Mechanical Stress Influence on Electronic Transport in Low-$k$ SiOC Dielectric Dual Damascene Capacitor. IEEE Electron Device Letters. 34(8). 1056–1058. 1 indexed citations
3.
Chang, Ting‐Chang, Geng-Wei Chang, Tsung‐Ming Tsai, et al.. (2013). N2O Plasma Treatment Suppressed Temperature-dependent Point Defects Formation with Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors. ECS Transactions. 45(31). 47–55. 1 indexed citations
4.
Huang, Sheng-Yao, et al.. (2012). The asymmetrical degradation behavior on drain bias stress under illumination for InGaZnO thin film transistors. Applied Physics Letters. 100(22). 18 indexed citations
5.
Hsieh, Tien‐Yu, Ting‐Chang Chang, Te-Chih Chen, et al.. (2012). Investigation of gate-bias stress and hot-carrier stress-induced instability of InGaZnO thin-film transistors under different environments. Surface and Coatings Technology. 231. 478–481. 6 indexed citations
6.
Huang, Sheng-Yao, Ting‐Chang Chang, Min-Chen Chen, et al.. (2012). Improvement in the bias stability of amorphous InGaZnO TFTs using an Al 2 O 3 passivation layer. Surface and Coatings Technology. 231. 117–121. 31 indexed citations
7.
Hsieh, Tien‐Yu, et al.. (2012). Investigating Degradation Behavior of InGaZnO Thin-Film Transistors Induced by Charge-Trapping Effect under DC and AC Gate-Bias Stress. ECS Transactions. 45(7). 133–140. 5 indexed citations
9.
Chang, Geng-Wei, Ting‐Chang Chang, Tsung‐Ming Tsai, et al.. (2012). Suppress temperature instability of InGaZnO thin film transistors by N2O plasma treatment, including thermal-induced hole trapping phenomenon under gate bias stress. Applied Physics Letters. 100(18). 36 indexed citations
10.
Lin, Chia-Sheng, Ying-Chung Chen, Ting‐Chang Chang, et al.. (2011). Anomalous on-current and subthreshold swing improvement in low-temperature polycrystalline-silicon thin-film transistors under Gate bias stress. Applied Physics Letters. 98(12). 5 indexed citations
11.
Chang, Ting‐Chang, Geng-Wei Chang, Chia-Sheng Lin, et al.. (2011). Effect of Lateral Body Terminal on Silicon–Oxide–Nitride–Oxide–Silicon Thin-Film Transistors. IEEE Electron Device Letters. 32(10). 1394–1396. 2 indexed citations
12.
Lin, Chia-Sheng, Ying-Chung Chen, Ting‐Chang Chang, et al.. (2011). Charge-Trapping-Induced Parasitic Capacitance and Resistance in SONOS TFTs Under Gate Bias Stress. IEEE Electron Device Letters. 32(3). 321–323. 4 indexed citations
13.
Chen, Te-Chih, Ting‐Chang Chang, Tien‐Yu Hsieh, et al.. (2011). Investigating the degradation behavior caused by charge trapping effect under DC and AC gate-bias stress for InGaZnO thin film transistor. Applied Physics Letters. 99(2). 142 indexed citations
14.
Chen, Te-Chih, Ting‐Chang Chang, Shih-Ching Chen, et al.. (2010). Analysis of Degradation Mechanism in SONOS-TFT Under Hot-Carrier Operation. IEEE Electron Device Letters. 31(12). 1413–1415. 6 indexed citations
15.
Jian, Fu-Yen, Ting‐Chang Chang, Ann‐Kuo Chu, et al.. (2010). A 2 Bit Nonvolatile Memory Device with a Transistor Switch Function Accomplished with Edge-FN Tunneling Operation. Electrochemical and Solid-State Letters. 13(5). H166–H166. 2 indexed citations
16.
Jian, Fu-Yen, Ting‐Chang Chang, A. K. Chu, et al.. (2010). Unusual Threshold Voltage Shift Caused by Self-Heating-Induced Charge Trapping Effect. Electrochemical and Solid-State Letters. 13(4). H95–H95. 1 indexed citations
17.
Chang, Ting‐Chang, et al.. (2009). Asymmetric Negative Bias Temperature Instability Degradation of Poly-Si TFTs under Static Stress. Journal of The Electrochemical Society. 157(1). H22–H22. 6 indexed citations
18.
Lin, Chia-Sheng, et al.. (2009). Anomalous Capacitance Induced by GIDL in P-Channel LTPS TFTs. IEEE Electron Device Letters. 30(11). 1179–1181. 13 indexed citations
19.
Lin, Chia-Sheng, Ying-Chung Chen, Ting‐Chang Chang, et al.. (2009). Illumination-Assisted Negative Bias Temperature Instability Degradation in Low Temperature Polycrystalline Silicon Thin-Film Transistors. Electrochemical and Solid-State Letters. 12(6). H229–H229. 1 indexed citations
20.
Jian, Fu-Yen, et al.. (1994). A MICROMACHINED POLYSILICON HOT-WIRE ANEMOMETER. 264–267. 29 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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