Y. Okuto

680 total citations
17 papers, 502 citations indexed

About

Y. Okuto is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Astronomy and Astrophysics. According to data from OpenAlex, Y. Okuto has authored 17 papers receiving a total of 502 indexed citations (citations by other indexed papers that have themselves been cited), including 16 papers in Electrical and Electronic Engineering, 5 papers in Atomic and Molecular Physics, and Optics and 1 paper in Astronomy and Astrophysics. Recurrent topics in Y. Okuto's work include Advancements in Semiconductor Devices and Circuit Design (10 papers), Semiconductor materials and devices (6 papers) and Silicon and Solar Cell Technologies (5 papers). Y. Okuto is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (10 papers), Semiconductor materials and devices (6 papers) and Silicon and Solar Cell Technologies (5 papers). Y. Okuto collaborates with scholars based in Japan, United Kingdom and United States. Y. Okuto's co-authors include C.R. Crowell, Yasuo Ohno, M. Fukuma, T. Kunio, Toshikazu Nishide, Masakiyo Matsumura and Yutaka Ohno and has published in prestigious journals such as Proceedings of the IEEE, IEEE Transactions on Electron Devices and Japanese Journal of Applied Physics.

In The Last Decade

Y. Okuto

15 papers receiving 463 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Y. Okuto Japan 6 443 164 132 43 42 17 502
S. Bigliardi Italy 7 325 0.7× 129 0.8× 95 0.7× 85 2.0× 44 1.0× 10 424
R. L. Batdorf Japan 7 512 1.2× 207 1.3× 71 0.5× 18 0.4× 65 1.5× 14 577
G. Gibbons United States 10 613 1.4× 276 1.7× 47 0.4× 8 0.2× 73 1.7× 19 677
R. B. Emmons United States 10 531 1.2× 310 1.9× 203 1.5× 24 0.6× 29 0.7× 22 588
A. Kerlain France 13 442 1.0× 144 0.9× 72 0.5× 22 0.5× 49 1.2× 53 482
K. Taguchi Japan 16 642 1.4× 476 2.9× 263 2.0× 16 0.4× 26 0.6× 47 696
S. Demiguel United States 17 769 1.7× 409 2.5× 153 1.2× 14 0.3× 34 0.8× 42 822
I. Shtrichman Israel 16 562 1.3× 410 2.5× 42 0.3× 25 0.6× 77 1.8× 50 658
T. Kaneda Japan 16 713 1.6× 490 3.0× 259 2.0× 20 0.5× 62 1.5× 50 782
Won−Tien Tsang United States 10 401 0.9× 325 2.0× 56 0.4× 30 0.7× 44 1.0× 30 498

Countries citing papers authored by Y. Okuto

Since Specialization
Citations

This map shows the geographic impact of Y. Okuto's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Y. Okuto with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Y. Okuto more than expected).

Fields of papers citing papers by Y. Okuto

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Y. Okuto. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Y. Okuto. The network helps show where Y. Okuto may publish in the future.

Co-authorship network of co-authors of Y. Okuto

This figure shows the co-authorship network connecting the top 25 collaborators of Y. Okuto. A scholar is included among the top collaborators of Y. Okuto based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Y. Okuto. Y. Okuto is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

17 of 17 papers shown
1.
Okuto, Y. & T. Kunio. (2002). ULSI technology development trend. 1. 3–9. 1 indexed citations
2.
Fukuma, M., et al.. (1982). Process-Device-Circuit CAD System for MOS VLSIs. Symposium on VLSI Technology. 56–57. 2 indexed citations
3.
Okuto, Y., M. Fukuma, & Yasuo Ohno. (1982). SOS/CMOS as a high-performance LSI device. IEEE Transactions on Electron Devices. 29(4). 574–577. 5 indexed citations
4.
Ohno, Yasuo & Y. Okuto. (1982). Electron mobility in n-channel depletion-type MOS transistors. IEEE Transactions on Electron Devices. 29(2). 190–194. 13 indexed citations
5.
Fukuma, M., Yasuo Ohno, & Y. Okuto. (1982). SOS MOSFET two-dimensional analysis. IEEE Transactions on Electron Devices. 29(3). 410–413. 2 indexed citations
6.
Fukuma, M., et al.. (1981). An Asymmetric Effect of Short Channel MOSFETs. Symposium on VLSI Technology. 18–19. 3 indexed citations
7.
Fukuma, M. & Y. Okuto. (1981). Correction to "Analysis of short-channel MOSFET's with field dependent carrier drift mobility". IEEE Transactions on Electron Devices. 28(5). 613–613. 1 indexed citations
8.
Fukuma, M. & Y. Okuto. (1980). Analysis of short-channel MOSFET's with field-dependent carrier-drift mobility. IEEE Transactions on Electron Devices. 27(11). 2109–2114. 12 indexed citations
9.
Ohno, Yasuo & Y. Okuto. (1980). Computer Aided Si-MOSFET Process Designing. Japanese Journal of Applied Physics. 19(S1). 65–65. 5 indexed citations
10.
Okuto, Y., et al.. (1975). Effect of undepleted high-resistivity region on microwave efficiency of GaAs IMPATT diodes. Proceedings of the IEEE. 63(4). 724–726. 1 indexed citations
11.
Okuto, Y. & C.R. Crowell. (1975). Threshold energy effect on avalanche breakdown voltage in semiconductor junctions. Solid-State Electronics. 18(2). 161–168. 192 indexed citations
12.
Okuto, Y. & C.R. Crowell. (1974). Ionization coefficients in semiconductors: A nonlocalized property. Physical review. B, Solid state. 10(10). 4284–4296. 142 indexed citations
13.
Okuto, Y. & C.R. Crowell. (1972). Energy-Conservation Considerations in the Characterization of Impact Ionization in Semiconductors. Physical review. B, Solid state. 6(8). 3076–3081. 107 indexed citations
14.
Okuto, Y.. (1971). The Temperature Coefficient of the Breakdown Voltage of Si Abrupt Punched-Through Type Diodes. Japanese Journal of Applied Physics. 10(1). 154–154. 3 indexed citations
15.
Okuto, Y., et al.. (1970). Effect of Field Distribution of Silicon p-n-n+ Avalanche Diodes on Efficiency. Japanese Journal of Applied Physics. 9(2). 230–230. 1 indexed citations
16.
Okuto, Y.. (1969). Junction Temperatures under Breakdown Condition. Japanese Journal of Applied Physics. 8(7). 917–917. 12 indexed citations
17.
Okuto, Y., et al.. (1968). Instability in the Avalanche Region of Si p-i-n Diodes. Japanese Journal of Applied Physics. 7(5). 553–553.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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