Yue‐Ming Hsin

930 total citations
116 papers, 748 citations indexed

About

Yue‐Ming Hsin is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Yue‐Ming Hsin has authored 116 papers receiving a total of 748 indexed citations (citations by other indexed papers that have themselves been cited), including 105 papers in Electrical and Electronic Engineering, 49 papers in Condensed Matter Physics and 34 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Yue‐Ming Hsin's work include GaN-based semiconductor devices and materials (49 papers), Semiconductor materials and devices (45 papers) and Radio Frequency Integrated Circuit Design (41 papers). Yue‐Ming Hsin is often cited by papers focused on GaN-based semiconductor devices and materials (49 papers), Semiconductor materials and devices (45 papers) and Radio Frequency Integrated Circuit Design (41 papers). Yue‐Ming Hsin collaborates with scholars based in Taiwan, United States and Japan. Yue‐Ming Hsin's co-authors include Jen‐Inn Chyi, Guanyu Chen, Yu‐Chang Liu, P.M. Asbeck, Huei Wang, Hong‐Yeh Chang, Che-Chung Kuo, Po‐An Lin, Hsin‐Chia Lu and Ching-Wen Wang and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

Yue‐Ming Hsin

109 papers receiving 720 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Yue‐Ming Hsin Taiwan 16 620 263 162 122 105 116 748
C. Largeron France 7 265 0.4× 229 0.9× 130 0.8× 63 0.5× 134 1.3× 13 415
Steven C. Binari United States 11 315 0.5× 249 0.9× 105 0.6× 127 1.0× 106 1.0× 21 422
John T. Leonard United States 14 559 0.9× 544 2.1× 455 2.8× 103 0.8× 94 0.9× 30 755
Sourav Adhikary India 15 664 1.1× 73 0.3× 550 3.4× 43 0.4× 324 3.1× 39 789
Eiji Yagyu Japan 14 519 0.8× 420 1.6× 197 1.2× 199 1.6× 115 1.1× 52 705
Manoj Kesaria United Kingdom 12 214 0.3× 183 0.7× 167 1.0× 149 1.2× 194 1.8× 39 430
C. Monier United States 18 781 1.3× 427 1.6× 504 3.1× 202 1.7× 191 1.8× 71 986
Bart Van Zeghbroeck United States 14 449 0.7× 261 1.0× 190 1.2× 106 0.9× 136 1.3× 49 579
Timothy J. Tredwell United States 15 642 1.0× 58 0.2× 134 0.8× 17 0.1× 196 1.9× 56 719
Tolga Kartaloğlu Türkiye 13 275 0.4× 189 0.7× 252 1.6× 188 1.5× 130 1.2× 30 509

Countries citing papers authored by Yue‐Ming Hsin

Since Specialization
Citations

This map shows the geographic impact of Yue‐Ming Hsin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yue‐Ming Hsin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yue‐Ming Hsin more than expected).

Fields of papers citing papers by Yue‐Ming Hsin

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yue‐Ming Hsin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yue‐Ming Hsin. The network helps show where Yue‐Ming Hsin may publish in the future.

Co-authorship network of co-authors of Yue‐Ming Hsin

This figure shows the co-authorship network connecting the top 25 collaborators of Yue‐Ming Hsin. A scholar is included among the top collaborators of Yue‐Ming Hsin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Yue‐Ming Hsin. Yue‐Ming Hsin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Hsin, Yue‐Ming, et al.. (2024). An AlGaN-GaN HEMT with p-GaN Extended Gate for Improvements on Current Dispersion and Breakdown Characteristics. ECS Journal of Solid State Science and Technology. 13(1). 15004–15004. 2 indexed citations
2.
3.
Tsai, Wen‐Hsuan, et al.. (2022). I–V Characteristics of E-mode GaN-based transistors under gate floating. Semiconductor Science and Technology. 37(4). 45002–45002. 1 indexed citations
4.
Hsin, Yue‐Ming, et al.. (2021). Low-frequency noise characterization of AlGaN/GaN HEMTs with and without a p-GaN gate layer. Semiconductor Science and Technology. 36(12). 125021–125021. 3 indexed citations
5.
Hsin, Yue‐Ming, et al.. (2021). Design of Hybrid Schottky-Ohmic Gate in Normally-Off p-GaN Gate AlGaN/GaN HEMTs. ECS Journal of Solid State Science and Technology. 10(12). 125003–125003. 1 indexed citations
6.
Hsin, Yue‐Ming, et al.. (2019). Thermal analysis of GaN-on-SiC HEMTs with different backside via layouts. Japanese Journal of Applied Physics. 58(SC). SCCD24–SCCD24. 1 indexed citations
7.
Hsin, Yue‐Ming, et al.. (2018). AlGaN/GaN High Electron Mobility Transistors with a p-GaN Backgate Structure. ECS Meeting Abstracts. MA2018-01(23). 1431–1431.
8.
Hsin, Yue‐Ming, et al.. (2017). Determination of Suitable Indicators of AlGaN/GaN HEMT Wafer Quality Based on Wafer Test and Device Characteristics. physica status solidi (a). 215(9). 4 indexed citations
9.
Lin, Jerry Chun‐Wei, et al.. (2017). GaAsSb/InGaAs tunnel field effect transistor with a pocket layer. Microelectronics Reliability. 83. 235–237. 3 indexed citations
10.
Chyi, Jen‐Inn, et al.. (2015). Trap-Profile Extraction Using High-Voltage Capacitance–Voltage Measurement in AlGaN/GaN Heterostructure Field-Effect Transistors With Field Plates. IEEE Transactions on Electron Devices. 62(3). 835–839. 14 indexed citations
11.
Chyi, Jen‐Inn, et al.. (2014). Gate leakage current induced trapping in AlGaN/GaN Schottky-gate HFETs and MISHFETs. Nanoscale Research Letters. 9(1). 474–474. 8 indexed citations
12.
Hsieh, Yu-Chen, et al.. (2013). 850-nm Edge-Illuminated Si Photodiodes Fabricated With CMOS-MEMS Technology. IEEE Photonics Technology Letters. 25(20). 2018–2021. 1 indexed citations
13.
14.
Liu, Hongkai, et al.. (2012). Time-dependent device characteristics in InAs/AlSb HEMTs. Solid-State Electronics. 73. 51–55. 1 indexed citations
15.
Kuo, Che-Chung, Po‐An Lin, Jing-Lin Kuo, et al.. (2011). A 3.5-GHz SiGe 0.35µm HBT flip-chip assembled on ceramics integrated passive device Doherty power amplifier for SiP integration. Asia-Pacific Microwave Conference. 114–117. 1 indexed citations
16.
Weng, Shou‐Hsien, Guanyu Chen, Hong‐Yeh Chang, & Yue‐Ming Hsin. (2011). A K-band high efficiency high output power CG-CS frequency doubler in 0.5-µm GaAs E/D-mode PHEMT process. Asia-Pacific Microwave Conference. 1258–1261. 1 indexed citations
17.
Hsin, Yue‐Ming, et al.. (2011). CMOS large-signal substrate modeling for high-power RF switch design. Asia-Pacific Microwave Conference. 1893–1896. 1 indexed citations
18.
Wang, Ching-Wen, et al.. (2010). An 8.7 GHz Si photodiode in standard 0.18-μm CMOS technology. 826–827. 2 indexed citations
19.
Hsin, Yue‐Ming, et al.. (2007). Low-Frequency Noise Properties of SiGe Heterojunction Bipolar Transistors. Japanese Journal of Applied Physics. 46(9R). 5729–5729. 2 indexed citations
20.
Hsin, Yue‐Ming, et al.. (1995). Selectively regrown carbon-doped (Al)GaAs by chemical beam epitaxy with novel gas sources. Journal of Crystal Growth. 150. 562–567. 9 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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