Peter M. Sandvik

877 total citations
31 papers, 720 citations indexed

About

Peter M. Sandvik is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Peter M. Sandvik has authored 31 papers receiving a total of 720 indexed citations (citations by other indexed papers that have themselves been cited), including 24 papers in Electrical and Electronic Engineering, 14 papers in Condensed Matter Physics and 8 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Peter M. Sandvik's work include GaN-based semiconductor devices and materials (14 papers), Silicon Carbide Semiconductor Technologies (12 papers) and Thin-Film Transistor Technologies (12 papers). Peter M. Sandvik is often cited by papers focused on GaN-based semiconductor devices and materials (14 papers), Silicon Carbide Semiconductor Technologies (12 papers) and Thin-Film Transistor Technologies (12 papers). Peter M. Sandvik collaborates with scholars based in United States, Israel and South Korea. Peter M. Sandvik's co-authors include X. A. Cao, S. F. LeBoeuf, Ho‐Young Cha, D. Walker, J. Kretchmer, E. B. Stokes, S. D. Arthur, Stanislav I. Soloviev, Jody Fronheiser and J.P.R. David and has published in prestigious journals such as IEEE Transactions on Electron Devices, Japanese Journal of Applied Physics and IEEE Electron Device Letters.

In The Last Decade

Peter M. Sandvik

30 papers receiving 680 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Peter M. Sandvik United States 13 465 459 235 201 186 31 720
C.J. Collins United States 13 258 0.6× 496 1.1× 218 0.9× 339 1.7× 145 0.8× 23 650
C. Largeron France 7 265 0.6× 229 0.5× 130 0.6× 63 0.3× 134 0.7× 13 415
Andrew Erickson United States 7 283 0.6× 183 0.4× 234 1.0× 79 0.4× 61 0.3× 16 417
Brenda L. VanMil United States 18 915 2.0× 119 0.3× 358 1.5× 209 1.0× 834 4.5× 62 1.4k
Yu. A. Goldberg Russia 11 347 0.7× 121 0.3× 200 0.9× 110 0.5× 167 0.9× 27 485
Jeomoh Kim United States 14 216 0.5× 519 1.1× 257 1.1× 266 1.3× 245 1.3× 27 690
J. Novák Slovakia 16 674 1.4× 552 1.2× 303 1.3× 315 1.6× 296 1.6× 97 933
R. D. Briggs United States 14 544 1.2× 351 0.8× 210 0.9× 182 0.9× 178 1.0× 31 714
Tsutomu Uesugi Japan 21 1.1k 2.4× 1.1k 2.4× 215 0.9× 491 2.4× 223 1.2× 59 1.3k
K. D. Mynbaev Russia 15 747 1.6× 167 0.4× 445 1.9× 105 0.5× 312 1.7× 139 854

Countries citing papers authored by Peter M. Sandvik

Since Specialization
Citations

This map shows the geographic impact of Peter M. Sandvik's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Peter M. Sandvik with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Peter M. Sandvik more than expected).

Fields of papers citing papers by Peter M. Sandvik

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Peter M. Sandvik. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Peter M. Sandvik. The network helps show where Peter M. Sandvik may publish in the future.

Co-authorship network of co-authors of Peter M. Sandvik

This figure shows the co-authorship network connecting the top 25 collaborators of Peter M. Sandvik. A scholar is included among the top collaborators of Peter M. Sandvik based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Peter M. Sandvik. Peter M. Sandvik is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Marshall, Andrew, et al.. (2012). Impact Ionization Coefficients in 4H-SiC by Ultralow Excess Noise Measurement. IEEE Transactions on Electron Devices. 59(4). 1030–1036. 13 indexed citations
2.
Cha, Ho‐Young, Hyuk‐Kee Sung, Hyungtak Kim, Chun-Hyung Cho, & Peter M. Sandvik. (2010). 4H-SiC Avalanche Photodiodes for 280 nm UV Detection. IEICE Transactions on Electronics. E93-C(5). 648–650. 5 indexed citations
3.
Vert, Alexey, Stanislav I. Soloviev, Jody Fronheiser, & Peter M. Sandvik. (2009). Influence of Defects in 4H-SiC Avalanche Photodiodes on Geiger-Mode Dark Count Probability. Materials science forum. 615-617. 877–880. 5 indexed citations
4.
David, J.P.R., Beng Koon Ng, Stanislav I. Soloviev, et al.. (2009). Temperature Dependence of Hole Impact Ionization Coefficient in 4H-SiC Photodiodes. Materials science forum. 615-617. 311–314. 3 indexed citations
5.
Rowland, L.B., et al.. (2009). 6H and 4H-SiC Avalanche Photodiodes. Materials science forum. 615-617. 869–872. 1 indexed citations
6.
Sandvik, Peter M., Stanislav I. Soloviev, Alexey Vert, et al.. (2009). SiC APDs and arrays for UV and solar blind detection. DSpace@MIT (Massachusetts Institute of Technology). 6739. 291–292. 1 indexed citations
7.
Soloviev, Stanislav I., Alexey Vert, Jody Fronheiser, & Peter M. Sandvik. (2009). Positive Temperature Coefficient of Avalanche Breakdown Observed in a-Plane 6H-SiC Photodiodes. Materials science forum. 615-617. 865–868. 1 indexed citations
8.
Soloviev, Stanislav I., Alexey Vert, Jody Fronheiser, & Peter M. Sandvik. (2009). Solar-Blind 4H-SiC Avalanche Photodiodes. Materials science forum. 615-617. 873–876. 8 indexed citations
9.
Ng, Beng Koon, Jo Shien Ng, Stanislav I. Soloviev, et al.. (2008). Impact Ionization Coefficients in 4H-SiC. IEEE Transactions on Electron Devices. 55(8). 1984–1990. 67 indexed citations
10.
Brown, D.M., et al.. (2008). Determination of Lean Burn Combustion Temperature Using Ultraviolet Emission. IEEE Sensors Journal. 8(3). 255–260. 13 indexed citations
11.
Cha, Ho‐Young & Peter M. Sandvik. (2008). Electrical and Optical Modeling of 4H-SiC Avalanche Photodiodes. Japanese Journal of Applied Physics. 47(7R). 5423–5423. 55 indexed citations
12.
McNally, P.J., Na Ren, A.N. Danilewsky, et al.. (2007). An X-Ray Topographic Analysis of the Crystal Quality of Globally Available SiC Wafers. Materials science forum. 556-557. 227–230. 1 indexed citations
13.
Ali, Muhammad, V. Cimalla, V. Lebedev, et al.. (2006). A Study of Hydrogen Sensing Performance of Pt–GaN Schottky Diodes. IEEE Sensors Journal. 6(5). 1115–1119. 25 indexed citations
14.
Guo, Xiangyi, L.B. Rowland, Greg Dunne, et al.. (2005). Demonstration of ultraviolet separate absorption and multiplication 4H-SiC avalanche photodiodes. IEEE Photonics Technology Letters. 18(1). 136–138. 53 indexed citations
15.
Brown, D.M., J.B. Fedison, J. Kretchmer, et al.. (2005). Silicon carbide photodiode sensor for combustion control. IEEE Sensors Journal. 5(5). 983–988. 18 indexed citations
16.
Cao, X. A., S. F. LeBoeuf, Peter M. Sandvik, et al.. (2002). Investigation of radiative tunneling in GaN/InGaN single quantum well light-emitting diodes. Solid-State Electronics. 46(12). 2291–2294. 32 indexed citations
17.
Ebong, Abasifreke, et al.. (2002). Modeling and circuit simulation of GaN-based light-emitting diodes for optimum efficiency through uniform current spreading. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 4776. 187–187. 2 indexed citations
18.
Cao, X. A., F. Shahedipour‐Sandvik, Julie Teetsov, et al.. (2002). Influence of defects on electrical and optical characteristics of GaN/InGaN-based light-emitting diodes. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 4776. 105–105. 26 indexed citations
19.
Sandvik, Peter M., D. Walker, Patrick Kung, et al.. (2000). Solar-blind Al x Ga 1-x N p-i-n photodetectors grown on LEO and non-LEO GaN. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 3948. 265–265. 10 indexed citations
20.
Kung, Patrick, et al.. (1999). Schottky MSM photodetectors on GaN films grown on sapphire by lateral epitaxial overgrowth. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 3629. 223–223. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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