Lezhi Wang

523 total citations
25 papers, 383 citations indexed

About

Lezhi Wang is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Condensed Matter Physics. According to data from OpenAlex, Lezhi Wang has authored 25 papers receiving a total of 383 indexed citations (citations by other indexed papers that have themselves been cited), including 16 papers in Atomic and Molecular Physics, and Optics, 14 papers in Electrical and Electronic Engineering and 10 papers in Condensed Matter Physics. Recurrent topics in Lezhi Wang's work include Magnetic properties of thin films (14 papers), GaN-based semiconductor devices and materials (7 papers) and ZnO doping and properties (6 papers). Lezhi Wang is often cited by papers focused on Magnetic properties of thin films (14 papers), GaN-based semiconductor devices and materials (7 papers) and ZnO doping and properties (6 papers). Lezhi Wang collaborates with scholars based in China, United States and France. Lezhi Wang's co-authors include Weisheng Zhao, Wang Kang, Kang L. Wang, He Zhang, Shouzhong Peng, Kaihua Cao, Kang L. Wang, Xiaoxuan Zhao, Xiang Li and Chao Zhao and has published in prestigious journals such as Applied Physics Letters, Applied Catalysis B: Environmental and IEEE Transactions on Electron Devices.

In The Last Decade

Lezhi Wang

24 papers receiving 370 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Lezhi Wang China 12 282 204 84 79 78 25 383
Guanda Wang China 12 314 1.1× 236 1.2× 100 1.2× 68 0.9× 38 0.5× 26 440
A. Venkatesan India 10 167 0.6× 225 1.1× 49 0.6× 101 1.3× 52 0.7× 16 307
Ao Du China 11 208 0.7× 265 1.3× 110 1.3× 112 1.4× 87 1.1× 30 407
Astera S. Tang United States 6 373 1.3× 432 2.1× 224 2.7× 101 1.3× 87 1.1× 7 546
Weiliang Gan Singapore 11 158 0.6× 240 1.2× 109 1.3× 83 1.1× 87 1.1× 15 313
Miguel Dias Costa Portugal 7 100 0.4× 102 0.5× 51 0.6× 261 3.3× 58 0.7× 8 396
Takuya Tsukahara Japan 6 80 0.3× 253 1.2× 157 1.9× 109 1.4× 67 0.9× 11 308
Yuichi Yamazaki Japan 11 185 0.7× 150 0.7× 43 0.5× 199 2.5× 29 0.4× 40 335
Kumari Gaurav Rana Netherlands 9 153 0.5× 156 0.8× 128 1.5× 157 2.0× 91 1.2× 15 387
Kohei Nawaoka Japan 9 83 0.3× 289 1.4× 174 2.1× 106 1.3× 100 1.3× 13 329

Countries citing papers authored by Lezhi Wang

Since Specialization
Citations

This map shows the geographic impact of Lezhi Wang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Lezhi Wang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Lezhi Wang more than expected).

Fields of papers citing papers by Lezhi Wang

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Lezhi Wang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Lezhi Wang. The network helps show where Lezhi Wang may publish in the future.

Co-authorship network of co-authors of Lezhi Wang

This figure shows the co-authorship network connecting the top 25 collaborators of Lezhi Wang. A scholar is included among the top collaborators of Lezhi Wang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Lezhi Wang. Lezhi Wang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Li, Xiangdong, Lezhi Wang, Zilan Li, et al.. (2024). Achieving ≥ 1200-V High-Performance GaN HEMTs on Sapphire With Carbon-Doped Buffer. IEEE Transactions on Electron Devices. 71(12). 7689–7695. 1 indexed citations
2.
Li, Xiangdong, Jie Zhang, Jian Ji, et al.. (2024). Demonstration of >8-kV GaN HEMTs With CMOS-Compatible Manufacturing on 6-in Sapphire Substrates for Medium-Voltage Applications. IEEE Transactions on Electron Devices. 71(6). 3989–3993. 11 indexed citations
3.
4.
Wang, Junbo, Xiangdong Li, Tao Zhang, et al.. (2024). Suppressing the Leakage of GaN HEMTs on Single-Crystalline AlN Templates by Buffer Optimization. IEEE Transactions on Electron Devices. 71(11). 6609–6615. 3 indexed citations
5.
Li, Xiangdong, Jian Ji, Lezhi Wang, et al.. (2024). p-GaN Gate HEMTs on 6-Inch Sapphire by CMOS-Compatible Process: A Promising Game Changer for Power Electronics. IEEE Electron Device Letters. 45(7). 1257–1260. 13 indexed citations
6.
Li, Xiangdong, Junbo Wang, Jincheng Zhang, et al.. (2023). 1700 V High-Performance GaN HEMTs on 6-inch Sapphire With 1.5 μm Thin Buffer. IEEE Electron Device Letters. 45(1). 84–87. 23 indexed citations
7.
Wang, Dewen, Dongxu Jiao, Yu‐Ting Chen, et al.. (2022). Nickel metaphosphate supported ruthenium for all pH hydrogen evolution: From single atom, cluster to nanoparticle. Applied Catalysis B: Environmental. 325. 122331–122331. 16 indexed citations
8.
Chen, Wenjing, Shaohua Yan, Lin Lin, et al.. (2021). Tuning the pinning direction of giant magnetoresistive sensor by post annealing process. Science China Information Sciences. 64(6). 8 indexed citations
9.
Ren, Xiaozhen, et al.. (2020). Bi and oxygen defects improved visible light photocatalysis with BiOBr nanosheets. Nanotechnology. 31(49). 495405–495405. 15 indexed citations
10.
Wang, Lezhi, Kewen Shi, Shouzhong Peng, et al.. (2019). Large spin Hall effect of perpendicularly magnetized β -W/CoFeB/MgO layers with high thermal stability. Japanese Journal of Applied Physics. 58(5). 50903–50903. 7 indexed citations
11.
Wang, Lezhi, Wang Kang, Farbod Ebrahimi, et al.. (2018). Voltage-Controlled Magnetic Tunnel Junctions for Processing-In-Memory Implementation. IEEE Electron Device Letters. 39(3). 440–443. 27 indexed citations
12.
Peng, Shouzhong, Lezhi Wang, Xiang Li, et al.. (2018). Enhancement of Perpendicular Magnetic Anisotropy Through Fe Insertion at the CoFe/W Interface. IEEE Transactions on Magnetics. 54(11). 1–5. 7 indexed citations
13.
Wang, Xuechuan, et al.. (2018). Modification of PA/PU superfine non-woven fiber for “breath” property using collagen and vegetable tannins. Journal of Industrial Textiles. 48(10). 1593–1615. 6 indexed citations
14.
Huang, Yangqi, Xiang Li, Lezhi Wang, et al.. (2018). Interface control of domain wall depinning field. AIP Advances. 8(5). 5 indexed citations
15.
Zhang, Yue, Zhizhong Zhang, Lezhi Wang, et al.. (2017). Partial spin absorption induced magnetization switching and its voltage-assisted improvement in an asymmetrical all spin logic device at the mesoscopic scale. Applied Physics Letters. 111(5). 16 indexed citations
16.
Cai, Wenlong, Kaihua Cao, Mengxing Wang, et al.. (2017). Interfacial property tuning of heavy metal/CoFeB for large density STT-MRAM. 1–4. 1 indexed citations
17.
Zeng, Lang, Tianqi Gao, Deming Zhang, et al.. (2017). Novel Magnetic Tunneling Junction Memory Cell With Negative Capacitance-Amplified Voltage-Controlled Magnetic Anisotropy Effect. IEEE Transactions on Electron Devices. 64(12). 4919–4927. 6 indexed citations
18.
Peng, Shouzhong, Wang Kang, Mengxing Wang, et al.. (2017). Interfacial Perpendicular Magnetic Anisotropy in Sub-20 nm Tunnel Junctions for Large-Capacity Spin-Transfer Torque Magnetic Random-Access Memory. IEEE Magnetics Letters. 8. 1–5. 28 indexed citations
19.
Zhang, He, Wang Kang, Lezhi Wang, Kang L. Wang, & Weisheng Zhao. (2017). Stateful Reconfigurable Logic via a Single-Voltage-Gated Spin Hall-Effect Driven Magnetic Tunnel Junction in a Spintronic Memory. IEEE Transactions on Electron Devices. 64(10). 4295–4301. 71 indexed citations
20.
Wang, Lezhi, et al.. (2016). Recent progresses in spin transfer torque-based magnetoresistive random access memory (STT-MRAM). Zhongguo kexue. Wulixue Lixue Tianwenxue. 46(10). 107306–107306. 19 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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