Huake Su

410 total citations
34 papers, 275 citations indexed

About

Huake Su is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Huake Su has authored 34 papers receiving a total of 275 indexed citations (citations by other indexed papers that have themselves been cited), including 27 papers in Condensed Matter Physics, 17 papers in Electrical and Electronic Engineering and 16 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Huake Su's work include GaN-based semiconductor devices and materials (27 papers), Ga2O3 and related materials (16 papers) and Semiconductor materials and devices (11 papers). Huake Su is often cited by papers focused on GaN-based semiconductor devices and materials (27 papers), Ga2O3 and related materials (16 papers) and Semiconductor materials and devices (11 papers). Huake Su collaborates with scholars based in China. Huake Su's co-authors include Xinyu Tian, Qinghe Zheng, Jincheng Zhang, Yulin Wu, Shengrui Xu, Yue Hao, Tao Zhang, Yue Hao, Zhihong Liu and Yachao Zhang and has published in prestigious journals such as Applied Physics Letters, Chemical Engineering Journal and Optics Letters.

In The Last Decade

Huake Su

31 papers receiving 260 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Huake Su China 8 151 120 69 42 41 34 275
Yun-Han Chang Taiwan 15 201 1.3× 557 4.6× 50 0.7× 69 1.6× 41 1.0× 48 653
Huimin Lu China 12 185 1.2× 313 2.6× 123 1.8× 96 2.3× 17 0.4× 76 491
Ardimas Andi Purwita United Kingdom 12 93 0.6× 584 4.9× 31 0.4× 33 0.8× 24 0.6× 37 672
Wenqing Niu China 14 30 0.2× 443 3.7× 21 0.3× 49 1.2× 26 0.6× 43 517
Zixian Wei China 15 134 0.9× 755 6.3× 51 0.7× 84 2.0× 40 1.0× 90 869
Meng Tian China 11 299 2.0× 206 1.7× 182 2.6× 131 3.1× 6 0.1× 28 494
Matthias R. Schweizer Germany 8 41 0.3× 115 1.0× 70 1.0× 59 1.4× 108 2.6× 14 397
Xiangyu He China 6 248 1.6× 538 4.5× 66 1.0× 75 1.8× 15 0.4× 19 650
Giulio Siracusano Italy 15 131 0.9× 191 1.6× 133 1.9× 35 0.8× 11 0.3× 30 537
Dingchen Wang China 9 14 0.1× 144 1.2× 45 0.7× 59 1.4× 24 0.6× 40 315

Countries citing papers authored by Huake Su

Since Specialization
Citations

This map shows the geographic impact of Huake Su's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Huake Su with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Huake Su more than expected).

Fields of papers citing papers by Huake Su

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Huake Su. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Huake Su. The network helps show where Huake Su may publish in the future.

Co-authorship network of co-authors of Huake Su

This figure shows the co-authorship network connecting the top 25 collaborators of Huake Su. A scholar is included among the top collaborators of Huake Su based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Huake Su. Huake Su is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
2.
Zhang, Tao, et al.. (2025). A 614 MW/cm2 AlGaN-channel Schottky barrier diode with high breakdown voltage and high temperature sensitivity. Applied Physics Letters. 126(1). 1 indexed citations
3.
Su, Huake, Tao Zhang, Yachao Zhang, et al.. (2025). A Performance-Enhanced p-Channel GaN MESFET With Tungsten Gate and High ION/ IOFF Ratio on SiC Substrate Operational at 525 K. IEEE Transactions on Electron Devices. 72(8). 4558–4562.
4.
Liu, Xu, Shengrui Xu, Tao Zhang, et al.. (2025). Demonstration of a GaN-based P-channel FinFET with high current density based on multi-channel structure. Applied Physics Letters. 126(20). 1 indexed citations
5.
Su, Huake, Tao Zhang, Shengrui Xu, et al.. (2024). An energy-band modulated p-GaN/InGaN/AlN p-channel MESFET with high ION/IOFF ratio and steep subthreshold swing. Applied Physics Letters. 124(16). 8 indexed citations
6.
Su, Huake, Tao Zhang, Shengrui Xu, et al.. (2024). A Normally-Off Tungsten-Gated p-AlGaN/u-GaN Composite-Channel p-MESFET With Negligible Hysteresis and a High I ON/I OFF Ratio. IEEE Transactions on Electron Devices. 71(7). 4433–4436.
7.
Zhang, Tao, Huake Su, Zeyang Ren, et al.. (2024). Comprehensive study of Schottky-gated p-channel GaN field-effect transistors. Applied Physics Letters. 125(23). 1 indexed citations
8.
Wang, Xinhao, Shengrui Xu, Jiaduo Zhu, et al.. (2023). The solution of wetting issues in GaN epitaxy on (111) SCD with magnetron sputtered AlN. Journal of Alloys and Compounds. 970. 172560–172560. 1 indexed citations
9.
Xu, Shengrui, Jincheng Zhang, Huake Su, et al.. (2023). Improved crystal quality and enhanced optical performance of GaN enabled by ion implantation induced high-quality nucleation. Optics Express. 31(13). 20850–20850. 23 indexed citations
10.
Xu, Shengrui, Yanrong Cao, Huake Su, et al.. (2023). Enhanced Performance of N-Polar AlGaN-Based Ultraviolet Light-Emitting Diodes With Lattice- Matched AlInGaN Insertion in n-AlGaN Layer. IEEE photonics journal. 15(3). 1–5. 4 indexed citations
11.
Xu, Shengrui, Weiguo Liu, Huake Su, et al.. (2023). Enhanced performance of GaN-based ultraviolet light emitting diodes with ITO/graphene/ITO transparent conductive layer. Results in Physics. 51. 106714–106714. 5 indexed citations
12.
Su, Huake, et al.. (2023). Interface state analysis of Schottky-gated p-AlGaN/u-GaN/AlGaN p-FET with negligible hysteresis at high temperatures. Applied Physics Letters. 123(13). 9 indexed citations
13.
Su, Huake, et al.. (2023). Normally-Off p-Channel AlGaN/GaN/AlGaN MESFET With High Breakdown Voltage and Ultra-Low Interface State Density. IEEE Electron Device Letters. 44(12). 1939–1942. 7 indexed citations
14.
Xu, Shengrui, Yachao Zhang, Jinfeng Zhang, et al.. (2023). High quality GaN films on miscut (1 1 1) diamond substrates through non-c orientation suppression. Results in Physics. 47. 106368–106368. 3 indexed citations
15.
Xu, Shengrui, et al.. (2022). Green light-emitting diodes with improved efficiency by an in situ C-doping GaN current spreading layer. Optics Letters. 47(16). 4139–4139. 5 indexed citations
16.
Su, Huake, Tao Zhang, Shengrui Xu, et al.. (2022). Mechanism of low Ohmic contact resistance to p-type GaN by suppressed edge dislocations. Applied Physics Letters. 120(22). 16 indexed citations
17.
Liu, Zhihong, Huake Su, Tao Zhang, et al.. (2022). High-Performance E-Mode p-Channel GaN FinFET on Silicon Substrate With High I ON/I OFF and High Threshold Voltage. IEEE Electron Device Letters. 43(5). 705–708. 28 indexed citations
18.
Su, Huake, Shengrui Xu, Ying Zhao, et al.. (2021). Improving the Current Spreading by Fe Doping in n-GaN Layer for GaN-Based Ultraviolet Light-Emitting Diodes. IEEE Electron Device Letters. 42(9). 1346–1349. 22 indexed citations
19.
Zheng, Qinghe, et al.. (2020). CLMIP: cross-layer manifold invariance based pruning method of deep convolutional neural network for real-time road type recognition. Multidimensional Systems and Signal Processing. 32(1). 239–262. 18 indexed citations
20.
Zheng, Qinghe, et al.. (2019). PAC-Bayesian framework based drop-path method for 2D discriminative convolutional network pruning. Multidimensional Systems and Signal Processing. 31(3). 793–827. 84 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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