Ronghui Hao

543 total citations
19 papers, 436 citations indexed

About

Ronghui Hao is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Ronghui Hao has authored 19 papers receiving a total of 436 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Condensed Matter Physics, 13 papers in Electrical and Electronic Engineering and 9 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Ronghui Hao's work include GaN-based semiconductor devices and materials (18 papers), Semiconductor materials and devices (9 papers) and Ga2O3 and related materials (9 papers). Ronghui Hao is often cited by papers focused on GaN-based semiconductor devices and materials (18 papers), Semiconductor materials and devices (9 papers) and Ga2O3 and related materials (9 papers). Ronghui Hao collaborates with scholars based in China and Canada. Ronghui Hao's co-authors include Guohao Yu, Baoshun Zhang, Yong Cai, Liang Song, Kai Fu, Xiaodong Zhang, Weiyi Li, Fu Chen, Yaming Fan and Jie Yuan and has published in prestigious journals such as Applied Physics Letters, IEEE Transactions on Electron Devices and Ecological Indicators.

In The Last Decade

Ronghui Hao

19 papers receiving 408 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Ronghui Hao China 10 416 287 257 118 60 19 436
Quanbin Zhou China 12 311 0.7× 224 0.8× 157 0.6× 133 1.1× 79 1.3× 28 376
Shichuang Sun China 8 328 0.8× 248 0.9× 220 0.9× 108 0.9× 47 0.8× 18 365
Y. K. T. Maung Singapore 8 419 1.0× 395 1.4× 246 1.0× 91 0.8× 78 1.3× 9 475
Sreenidhi Turuvekere India 7 384 0.9× 347 1.2× 165 0.6× 79 0.7× 92 1.5× 15 429
Towhidur Razzak United States 12 344 0.8× 293 1.0× 217 0.8× 92 0.8× 54 0.9× 22 403
Chia-Hsun Wu Taiwan 13 314 0.8× 271 0.9× 162 0.6× 91 0.8× 53 0.9× 22 374
Shota Kaneki Japan 10 355 0.9× 338 1.2× 218 0.8× 128 1.1× 69 1.1× 15 450
Joshua Perozek United States 8 306 0.7× 243 0.8× 158 0.6× 101 0.9× 48 0.8× 13 355
S. C. Foo Singapore 9 328 0.8× 301 1.0× 180 0.7× 74 0.6× 62 1.0× 11 369
Qilong Bao China 11 423 1.0× 310 1.1× 222 0.9× 104 0.9× 75 1.3× 14 444

Countries citing papers authored by Ronghui Hao

Since Specialization
Citations

This map shows the geographic impact of Ronghui Hao's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Ronghui Hao with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Ronghui Hao more than expected).

Fields of papers citing papers by Ronghui Hao

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Ronghui Hao. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Ronghui Hao. The network helps show where Ronghui Hao may publish in the future.

Co-authorship network of co-authors of Ronghui Hao

This figure shows the co-authorship network connecting the top 25 collaborators of Ronghui Hao. A scholar is included among the top collaborators of Ronghui Hao based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Ronghui Hao. Ronghui Hao is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

19 of 19 papers shown
1.
Liu, Ming, Ronghui Hao, Ling Han, Gaoxiang Zhou, & Liangzhi Li. (2023). An integrated economic-ecological index based on satellite-derived carbon sequestration and carbon price: A case study during 2015–2020 in Shaanxi, China. Ecological Indicators. 153. 110458–110458. 6 indexed citations
2.
3.
Hao, Ronghui, Bin Fang, Zhi‐Fu Tao, et al.. (2019). Monolithic integration of enhancement/depletion-mode high electron mobility transistors using hydrogen plasma treatment. Applied Physics Express. 12(3). 36502–36502. 11 indexed citations
4.
Hao, Ronghui, Liang Song, Fu Chen, et al.. (2019). Enhancement mode AlGaN/GaN HEMTs by fluorine ion thermal diffusion with high V th stability. Applied Physics Express. 12(6). 66501–66501. 11 indexed citations
5.
Hao, Ronghui, Tao He, Guohao Yu, et al.. (2019). Normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors using oxygen plasma treatment. Applied Physics Express. 12(5). 51001–51001. 20 indexed citations
6.
Chen, Fu, Ronghui Hao, Guohao Yu, et al.. (2019). Enhancement-mode n-GaN gate p-channel heterostructure field effect transistors based on GaN/AlGaN 2D hole gas. Applied Physics Letters. 115(11). 9 indexed citations
7.
Hao, Ronghui, et al.. (2018). p-GaN hybrid anode AlGaN/GaN diode with 1000 V operation. Acta Physica Sinica. 67(19). 198501–198501. 6 indexed citations
8.
Song, Liang, Kai Fu, Jie Zhao, et al.. (2018). Influence factors and temperature reliability of ohmic contact on AlGaN/GaN HEMTs. AIP Advances. 8(3). 11 indexed citations
9.
Song, Liang, Kai Fu, Jie Zhao, et al.. (2018). Degradation of AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors under off-state electrical stress. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 36(4). 3 indexed citations
10.
Hao, Ronghui, Guohao Yu, Liang Song, et al.. (2018). Studies on Fabrication and Reliability of GaN High-Resistivity-Cap-Layer HEMT. IEEE Transactions on Electron Devices. 65(4). 1314–1320. 28 indexed citations
11.
Hao, Ronghui, Fu Chen, Xiaodong Zhang, et al.. (2018). Gate leakage mechanisms in normally off p-GaN/AlGaN/GaN high electron mobility transistors. Applied Physics Letters. 113(15). 94 indexed citations
12.
Hao, Ronghui, Dongdong Wu, Kai Fu, et al.. (2018). 10 A/567 V normally off p‐GaN gate HEMT with high‐threshold voltage and low‐gate leakage current. Electronics Letters. 54(13). 848–849. 7 indexed citations
13.
Hao, Ronghui, Weiyi Li, Kai Fu, et al.. (2017). Breakdown Enhancement and Current Collapse Suppression by High-Resistivity GaN Cap Layer in Normally-Off AlGaN/GaN HEMTs. IEEE Electron Device Letters. 38(11). 1567–1570. 102 indexed citations
14.
Li, Weiyi, Zhili Zhang, Kai Fu, et al.. (2017). Design and simulation of a novel E-mode GaN MIS-HEMT based on a cascode connection for suppression of electric field under gate and improvement of reliability. Journal of Semiconductors. 38(7). 74001–74001. 7 indexed citations
15.
Song, Liang, Kai Fu, Zhili Zhang, et al.. (2017). Interface Si donor control to improve dynamic performance of AlGaN/GaN MIS-HEMTs. AIP Advances. 7(12). 6 indexed citations
16.
17.
Hao, Ronghui, Kai Fu, Guohao Yu, et al.. (2016). Normally-off p-GaN/AlGaN/GaN high electron mobility transistors using hydrogen plasma treatment. Applied Physics Letters. 109(15). 75 indexed citations
18.
Zhang, Zhili, Kai Fu, Guohao Yu, et al.. (2016). Fabrication of normally-off AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors by photo-electrochemical gate recess etching in ionic liquid. Applied Physics Express. 9(8). 84102–84102. 20 indexed citations
19.
Dong, Zhihua, et al.. (2014). Impact of N<sup>&#x2212;</sup> plasma treatment on the Current collapse of ALGAN/GAN HEMTs. 35. 1–3. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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