W. Swider

808 citations

35 papers · 662 indexed · h-index 14

Impact in

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 23
- GaN-based semiconductor devices and materials 22
Electronic, Optical and Magnetic Materials 14
- Ga2O3 and related materials 13

Co-authors: Z. Liliental‐Weber J. Washburn Mourad Benamara K. M. Yu Jacek B. Jasiński J. B. Kortright F. W. Smith A. R. Calawa
Journals: Applied Physics Letters (7 papers)MRS Internet Journal of Nitride Semiconductor Research (4 papers)Journal of Electronic Materials (2 papers)Journal of Crystal Growth (1 paper)Thin Solid Films (1 paper)
Partner nations: United States Poland Japan

In The Last Decade

W. Swider

32 papers receiving 646 citations

Peers

Countries citing papers authored by W. Swider

Since Specialization

Citations

This map shows the geographic impact of W. Swider's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by W. Swider with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites W. Swider more than expected).

Fields of papers citing papers by W. Swider

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by W. Swider. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by W. Swider. The network helps show where W. Swider may publish in the future.

Co-authorship network

The 25 scholars most cited alongside W. Swider, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with W. Swider Line = papers co-authored together W. Swider links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Crystal structure of κ-In2Se3 Applied Physics Letters ·Jacek B. Jasiński, W. Swider, J. Washburn, Z. Liliental‐Weber, A. Chaiken, K. Nauka, Gary A. P. Gibson, Chuankai Yang	2002	81
2	Characterization of free-standing hydride vapor phase epitaxy GaN Applied Physics Letters ·Jacek B. Jasiński, W. Swider, Z. Liliental‐Weber, Paolo Visconti, K. M. Jones, M. A. Reshchikov, Feng Yun, H. Morkoç̌, S. S. Park, Kiyoung Lee	2001	47
3	Study of high quality GaN grown by OMVPE using an intermediate layer Journal of Crystal Growth ·Mourad Benamara, Z. Liliental‐Weber, S Kellermann, W. Swider, J. Washburn, J.H. Mazur, Edith Bourret-Courchesne	2000	17
4	Structural analysis of interfacial layers in Ti/Ta/Al ohmic contacts to n-AlGaN Journal of Applied Physics ·Sung‐Hwan Lim, W. Swider, J. Washburn, Z. Liliental‐Weber	2000	15
5	TEM Study of Defects in Laterally Overgrown GaN Layers MRS Internet Journal of Nitride Semiconductor Research ·Z. Liliental‐Weber, Mourad Benamara, W. Swider, J. Washburn, Jihun Park, Piotr Grudowski, C. J. Eiting, Russell D. Dupuis	1999	14
6	Mg-doped GaN: Similar defects in bulk crystals and layers grown on Al2O3 by metal–organic chemical-vapor deposition Applied Physics Letters ·Z. Liliental‐Weber, Mourad Benamara, W. Swider, J. Washburn, I. Grzegory, S. Porowski, Damien Lambert, C. J. Eiting, Russell D. Dupuis	1999	77
7	Effects of GaAs-spacer strain on vertical ordering of stacked InAs quantum dots in a GaAs matrix Journal of Electronic Materials ·Sergei Rouvimov, Z. Liliental‐Weber, W. Swider, J. Washburn, E. R. Weber, Akio Sasaki, Akihiro Wakahara, María Dolores Abelló Planas, Tomoki Abe, Susumu Noda	1998	27
8	Polarity of GaN MRS Proceedings ·Z. Liliental‐Weber, Mourad Benamara, Tatjana Sotnikova, W. Swider, J. Washburn, I. Grzegory, S. Porowski, Jinwei Yang, Shuji Nakamura	1998	9
9	Al-based thermal oxides in vertical cavity surface emitting lasers Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Z. Liliental‐Weber, S. Ruvimov, W. Swider, J. Washburn, Meng Li, Abigail M Cahill, Constance J. Chang-Hasnain, Eicke R. Weber	1997	3
10	Role of Dopants and Impurities on Pinhole Formation; Defects Formed At Ingan/Gan And AlGaN/GaN Quantum Wells MRS Proceedings ·Z. Liliental‐Weber, S. Ruvimov, W. Swider, Youngmee Kim, J. Washburn, Shuji Nakamura, R. S. Kern, Yuan Yuan Chen, Jinwei Yang	1997	13
11	Structural characterization of thin Ni films deposited on (001) ZnSe Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·S. Ruvimov, Z. Liliental‐Weber, Edith Bourret, W. Swider, J. Washburn, K. J. Duxstad, E. E. Haller	1997	2
12	Nano-Tubes in GaN MRS Proceedings ·Z. Liliental‐Weber, Yuan Yuan Chen, S. Ruvimov, W. Swider, J. Washburn	1996	20
13	Effect of Si Doping on The Structure of Gan MRS Proceedings ·Z. Liliental‐Weber, S. Ruvimov, T. Suski, Joel W. Ager, W. Swider, Y. Chen, C. Kisielowski, J. Washburn, Isamu Akasaki, Hiroshi Amano, Diane S. Deutsch, W. Imler	1996	12
14	Structural Defects in Heteroepitaxial and Homoepitaxial GaN MRS Proceedings ·Z. Liliental‐Weber, S. Ruvimov, C. Kisielowski, Y. Chen, W. Swider, J. Washburn, N. Newman, Andrea Gassmann, X. Liu, Y.H. Chen, E. R. Weber, I. Grzegory, Michał Boćkowski, J. Jun, T. Suski, K. Pakuła, Jacek Baranowski, S. Porowski, Hiroshi Amano, Isamu Akasaki	1995	32
15	Metallurgy of Al–Ni–Ge ohmic contact formation on n-GaAs Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Xi–Wei Lin, W. V. Lampert, T. W. Haas, Paul H. Holloway, Z. Liliental‐Weber, W. Swider, J. Washburn	1995	6
16	Morphology of Al—Ni—Ge ohmic contacts to n-GaAs as a function of contact composition Thin Solid Films ·Xi–Wei Lin, W. V. Lampert, W. Swider, T. W. Haas, Paul H. Holloway, J. Washburn, Z. Liliental‐Weber	1994	2
17	Defects In GaAs Bulk Crystals and Multi-Layers Caused by In Diffusion MRS Proceedings ·P. Werner, Z. Liliental‐Weber, W. Swider, Hyunchul Sohn, Katie Coughlin, Jacek Baranowski, E. R. Weber	1993	0
18	Epitaxial Phase Formation of FeSi₂ in an Fe-Implanted Si by Ion Irradiation and Rapid Thermal Annealing MRS Proceedings ·Xi–Wei Lin, M. Behar, J. Desimoni, Domenico Cecere, W. Swider, Z. Liliental‐Weber, J. Washburn	1992	4
19	Breakdown of crystallinity in low-temperature-grown GaAs layers Applied Physics Letters ·Z. Liliental‐Weber, W. Swider, K. M. Yu, J. B. Kortright, F. W. Smith, A. R. Calawa	1991	101
20	TEM and HREM Studies of As-Grown Low-Temperature Molecular Beam Epitaxial In_0.52Al_0.48As/InP Heterolayers MRS Proceedings ·A. Claverie, Z. Liliental‐Weber, P. Werner, W. Swider, H Fürstenberg, Sandeep Gupta, G. Mourou	1991	1

About W. Swider

W. Swider is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Mechanics of Materials, having authored 35 papers that have together received 662 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (22 papers), Ga2O3 and related materials (13 papers), Semiconductor materials and devices (13 papers), Semiconductor Quantum Structures and Devices (11 papers), ZnO doping and properties (8 papers), Semiconductor materials and interfaces (6 papers), Metal and Thin Film Mechanics (6 papers) and Advanced Semiconductor Detectors and Materials (5 papers). The work is most often cited by research in Condensed Matter Physics (382 citations), Electronic, Optical and Magnetic Materials (178 citations), Atomic and Molecular Physics, and Optics (270 citations), Electrical and Electronic Engineering (388 citations) and Materials Chemistry (295 citations). W. Swider has collaborated with scholars based in United States, Poland and Japan. Frequent co-authors include Z. Liliental‐Weber, J. Washburn, Mourad Benamara, K. M. Yu, Jacek B. Jasiński, J. B. Kortright, F. W. Smith, A. R. Calawa, C. J. Eiting and Russell D. Dupuis. Their work appears in journals such as Applied Physics Letters, MRS Internet Journal of Nitride Semiconductor Research, Journal of Electronic Materials, Journal of Crystal Growth and Thin Solid Films.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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