J.H. Mazur

451 total citations
19 papers, 351 citations indexed

About

J.H. Mazur is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, J.H. Mazur has authored 19 papers receiving a total of 351 indexed citations (citations by other indexed papers that have themselves been cited), including 14 papers in Electrical and Electronic Engineering, 9 papers in Atomic and Molecular Physics, and Optics and 7 papers in Condensed Matter Physics. Recurrent topics in J.H. Mazur's work include Semiconductor materials and devices (10 papers), GaN-based semiconductor devices and materials (7 papers) and Semiconductor Quantum Structures and Devices (5 papers). J.H. Mazur is often cited by papers focused on Semiconductor materials and devices (10 papers), GaN-based semiconductor devices and materials (7 papers) and Semiconductor Quantum Structures and Devices (5 papers). J.H. Mazur collaborates with scholars based in United States, Poland and Canada. J.H. Mazur's co-authors include J. Washburn, H. Morkoç̌, R. Fischer, John F. Klem, W. T. Masselink, T. Henderson, M. V. Klein, P. J. Grunthaner, R. W. Fathauer and T. L. Lin and has published in prestigious journals such as Journal of Applied Physics, Thin Solid Films and Journal of Crystal Growth.

In The Last Decade

J.H. Mazur

18 papers receiving 315 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J.H. Mazur United States 7 266 224 98 61 51 19 351
B.J. Garcı́a Spain 11 253 1.0× 154 0.7× 152 1.6× 41 0.7× 103 2.0× 51 368
Shinichiro Takatani Japan 12 348 1.3× 220 1.0× 203 2.1× 48 0.8× 54 1.1× 38 452
B. Gruzza France 12 434 1.6× 385 1.7× 104 1.1× 56 0.9× 41 0.8× 31 478
Masayasu Nishizawa Japan 10 381 1.4× 184 0.8× 199 2.0× 24 0.4× 51 1.0× 30 467
L. J. Chen Taiwan 13 209 0.8× 257 1.1× 86 0.9× 77 1.3× 58 1.1× 23 377
L. M. Williams United States 9 259 1.0× 151 0.7× 229 2.3× 26 0.4× 45 0.9× 20 378
Baoxue Bo China 10 361 1.4× 215 1.0× 156 1.6× 62 1.0× 47 0.9× 80 422
R R Varma United Kingdom 11 367 1.4× 287 1.3× 124 1.3× 21 0.3× 32 0.6× 15 449
Y. Makita Japan 12 448 1.7× 360 1.6× 286 2.9× 61 1.0× 57 1.1× 50 569
Vl. Kolkovsky Germany 12 334 1.3× 169 0.8× 185 1.9× 72 1.2× 27 0.5× 49 425

Countries citing papers authored by J.H. Mazur

Since Specialization
Citations

This map shows the geographic impact of J.H. Mazur's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.H. Mazur with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.H. Mazur more than expected).

Fields of papers citing papers by J.H. Mazur

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.H. Mazur. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.H. Mazur. The network helps show where J.H. Mazur may publish in the future.

Co-authorship network of co-authors of J.H. Mazur

This figure shows the co-authorship network connecting the top 25 collaborators of J.H. Mazur. A scholar is included among the top collaborators of J.H. Mazur based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J.H. Mazur. J.H. Mazur is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

19 of 19 papers shown
1.
Mazur, J.H., et al.. (2011). XPS and AFM studies of surface chemistry and morphology of In2O3 ultrathin films deposited by rheotaxial growth and vacuum oxidation. Thin Solid Films. 520(3). 927–931. 24 indexed citations
2.
Benamara, Mourad, Z. Liliental‐Weber, S Kellermann, et al.. (2000). Study of high quality GaN grown by OMVPE using an intermediate layer. Journal of Crystal Growth. 218(2-4). 447–450. 17 indexed citations
3.
Benamara, Mourad, Z. Liliental‐Weber, J.H. Mazur, et al.. (2000). The Role of the Multi Buffer Layer Technique on the Structural Quality of GaN. MRS Internet Journal of Nitride Semiconductor Research. 5(S1). 398–404. 2 indexed citations
4.
Mazur, J.H., Mourad Benamara, Z. Liliental‐Weber, et al.. (2000). Effect of the Doping and the Al Content on the Microstructure and Morphology of Thin AlxGa1−xN Layers Grown by MOCVD. MRS Internet Journal of Nitride Semiconductor Research. 5(S1). 294–300. 3 indexed citations
5.
Benamara, Mourad, Z. Liliental‐Weber, S Kellermann, et al.. (2000). TEM Study of High Quality GaN Grown by OMVPE Using an Intermediate Layer. MRS Proceedings. 622.
6.
Liliental‐Weber, Z., Mourad Benamara, S. Ruvimov, et al.. (1999). TEM Study of Mg-Doped Bulk GaN Crystals. MRS Proceedings. 572. 6 indexed citations
7.
Grunthaner, P. J., F. J. Grunthaner, R. W. Fathauer, et al.. (1989). Hydrogen-terminated silicon substrates for low-temperature molecular beam epitaxy. Thin Solid Films. 183(1-2). 197–212. 86 indexed citations
8.
Dubowski, Jan J., et al.. (1989). Ga and In Autodoping of Cdt, MnxTe Epitaxial Layers Grown on GaAs and InSb Substrates. MRS Proceedings. 161. 3 indexed citations
9.
Fathauer, R. W., P. J. Grunthaner, T. L. Lin, et al.. (1988). Molecular-beam epitaxy of CrSi2 on Si(111). Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 6(2). 708–712. 24 indexed citations
10.
Radhakrishnan, G., et al.. (1988). Growth of (111) GaAs on (111) Si using molecular-beam epitaxy. Journal of Applied Physics. 64(3). 1596–1598. 12 indexed citations
11.
Grunthaner, P. J., F. D. Schowengerdt, R. W. Fathauer, et al.. (1988). Growth of CoSi2/Si Multilayer Structures. MRS Proceedings. 116. 1 indexed citations
12.
Fathauer, R. W., T. L. Lin, F. J. Grunthaner, et al.. (1988). Silicon-Compatible Infrared Sensors Based On Epitaxial Silicides. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 877. 2–2. 1 indexed citations
13.
Fathauer, R. W., P. J. Grunthaner, T. L. Lin, Kai Chang, & J.H. Mazur. (1988). Nucleation and Growth of CrSi2 on Si(111). MRS Proceedings. 116. 2 indexed citations
14.
15.
Fischer, R., W. T. Masselink, John F. Klem, et al.. (1985). Growth and properties of GaAs/AlGaAs on nonpolar substrates using molecular beam epitaxy. Journal of Applied Physics. 58(1). 374–381. 160 indexed citations
16.
Mazur, J.H., J. Washburn, R. Fischer, et al.. (1985). TEM combined with AlxGa1−xAs As marker layers as a technique for the study of GaAs MBE growth. Ultramicroscopy. 18(1-4). 371–377. 1 indexed citations
17.
Mazur, J.H., R. Gronsky, & J. Washburn. (1984). Oxidation Of Singular And Vicinal Surfaces Of Silicon: The Structure Of Si-Si0 2 Interface. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 463. 88–88. 2 indexed citations
18.
Fischer, R., T. Henderson, J. F. Klem, et al.. (1984). Characteristics of GaAs/AlGaAs MODFETs grown directly on. 856–856. 1 indexed citations
19.
Mazur, J.H. & Carl M. Lampert. (1984). High Resolution Electron Microscopy Study Of Silica Aerogel Transparent Insulation. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 502. 123–123. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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