J.H. Mazur

451 citations

19 papers · 351 indexed · h-index 7

Co-authors: J. Washburn H. Morkoç̌W. T. Masselink John F. Klem T. Henderson M. V. Klein R. Fischer T. L. Lin
Topics: Semiconductor materials and devices (10 papers)GaN-based semiconductor devices and materials (7 papers)Semiconductor Quantum Structures and Devices (5 papers)
Cited by: Atomic and Molecular Physics, and Optics Condensed Matter Physics Electrical and Electronic Engineering
Journals: Journal of Applied Physics Thin Solid Films Journal of Crystal Growth
Partner nations: United States Poland Canada

In The Last Decade

J.H. Mazur

18 papers receiving 315 citations

Peers

Countries citing papers authored by J.H. Mazur

Since Specialization

Citations

This map shows the geographic impact of J.H. Mazur's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.H. Mazur with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.H. Mazur more than expected).

Fields of papers citing papers by J.H. Mazur

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.H. Mazur. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.H. Mazur. The network helps show where J.H. Mazur may publish in the future.

Co-authorship network of co-authors of J.H. Mazur

This figure shows the co-authorship network connecting the top 25 collaborators of J.H. Mazur. A scholar is included among the top collaborators of J.H. Mazur based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J.H. Mazur. J.H. Mazur is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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19 of 19 papers shown

#	Work	Indexed citations
1	XPS and AFM studies of surface chemistry and morphology of In2O3 ultrathin films deposited by rheotaxial growth and vacuum oxidation 2011 ·Thin Solid Films ·(unknown),J.H. Mazur,(unknown),Monika Kwoka,Łukasz Pawela,J. Szuber	24
2	Study of high quality GaN grown by OMVPE using an intermediate layer 2000 ·Journal of Crystal Growth ·Mourad Benamara,Z. Liliental‐Weber,S Kellermann,W. Swider,J. Washburn,J.H. Mazur,Edith Bourret-Courchesne	17
3	The Role of the Multi Buffer Layer Technique on the Structural Quality of GaN 2000 ·MRS Internet Journal of Nitride Semiconductor Research ·Mourad Benamara,Z. Liliental‐Weber,J.H. Mazur,W. Swider,J. Washburn,Motoaki Iwaya,Isamu Akasaki,Hiroshi Amano	2
4	TEM Study of High Quality GaN Grown by OMVPE Using an Intermediate Layer 2000 ·MRS Proceedings ·Mourad Benamara,Z. Liliental‐Weber,S Kellermann,W. Swider,J. Washburn,J.H. Mazur,Edith Bourret-Courchesne	0
5	Effect of the Doping and the Al Content on the Microstructure and Morphology of Thin Al_xGa_1−xN Layers Grown by MOCVD 2000 ·MRS Internet Journal of Nitride Semiconductor Research ·J.H. Mazur,Mourad Benamara,Z. Liliental‐Weber,W. Swider,J. Washburn,C. J. Eiting,Russell D. Dupuis	3
6	TEM Study of Mg-Doped Bulk GaN Crystals 1999 ·MRS Proceedings ·Z. Liliental‐Weber,Mourad Benamara,S. Ruvimov,J.H. Mazur,J. Washburn,I. Grzegory,S. Porowski	6
7	Hydrogen-terminated silicon substrates for low-temperature molecular beam epitaxy 1989 ·Thin Solid Films ·P. J. Grunthaner,F. J. Grunthaner,R. W. Fathauer,T. L. Lin,M. H. Hecht,Lauren Bell,William J. Kaiser,F. D. Schowengerdt,J.H. Mazur	86
8	Ga and In Autodoping of Cdt, MnxTe Epitaxial Layers Grown on GaAs and InSb Substrates 1989 ·MRS Proceedings ·Jan J. Dubowski,J. Wróbel,S. Rolfe,J. A. Jackman,J.H. Mazur,(unknown)	3
9	Molecular-beam epitaxy of CrSi2 on Si(111) 1988 ·Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ·R. W. Fathauer,P. J. Grunthaner,T. L. Lin,Kai Chang,J.H. Mazur,David N. Jamieson	24
10	Growth of (111) GaAs on (111) Si using molecular-beam epitaxy 1988 ·Journal of Applied Physics ·G. Radhakrishnan,(unknown),F. J. Grunthaner,J. Katz,H. Morkoç̌,J.H. Mazur	12
11	Silicon-Compatible Infrared Sensors Based On Epitaxial Silicides 1988 ·Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·R. W. Fathauer,T. L. Lin,F. J. Grunthaner,J. Maserjian,Per‐Olof Andersson,Kai Chang,J.H. Mazur,David N. Jamieson	1
12	Growth of CoSi₂/Si Multilayer Structures 1988 ·MRS Proceedings ·(unknown),P. J. Grunthaner,F. D. Schowengerdt,R. W. Fathauer,J.H. Mazur,(unknown),S. Hashimoto,Qingyin Xia	1
13	Nucleation and Growth of CrSi₂ on Si(111) 1988 ·MRS Proceedings ·R. W. Fathauer,P. J. Grunthaner,T. L. Lin,Kai Chang,J.H. Mazur	2
14	High Resolution Transmission Electron Microscopy Investigation of the Defect Structure in CdMnTe Layers Grown on GaAs by MOCVD 1987 ·MRS Proceedings ·J.H. Mazur,Piotr Grodzinski,(unknown),R. J. Stirn	3
15	Growth and properties of GaAs/AlGaAs on nonpolar substrates using molecular beam epitaxy 1985 ·Journal of Applied Physics ·R. Fischer,W. T. Masselink,John F. Klem,T. Henderson,(unknown),M. V. Klein,H. Morkoç̌,J.H. Mazur,J. Washburn	160
16	TEM combined with AlxGa1−xAs As marker layers as a technique for the study of GaAs MBE growth 1985 ·Ultramicroscopy ·J.H. Mazur,J. Washburn,R. Fischer,T. Henderson,John F. Klem,W. T. Masselink,W. Kopp,H. Morkoç̌	1
17	High Resolution Electron Microscopy Study Of Silica Aerogel Transparent Insulation 1984 ·Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·J.H. Mazur,Carl M. Lampert	3
18	Characteristics of GaAs/AlGaAs MODFETs grown directly on 1984 ·R. Fischer,T. Henderson,J. F. Klem,W. T. Masselink,W. Kopp,H. Morkoç,J.H. Mazur,J. Washburn	1
19	Oxidation Of Singular And Vicinal Surfaces Of Silicon: The Structure Of Si-Si0 2 Interface 1984 ·Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·J.H. Mazur,R. Gronsky,J. Washburn	2

About J.H. Mazur

J.H. Mazur is a scholar working on Structural Biology, Condensed Matter Physics and Surfaces, Coatings and Films, having authored 19 papers that have together received 351 indexed citations. Recurring topics across this work include Semiconductor materials and devices (10 papers), GaN-based semiconductor devices and materials (7 papers) and Semiconductor Quantum Structures and Devices (5 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (224 citations), Condensed Matter Physics (61 citations) and Electrical and Electronic Engineering (266 citations). J.H. Mazur has collaborated with scholars based in United States, Poland and Canada. Frequent co-authors include J. Washburn, H. Morkoç̌, W. T. Masselink, John F. Klem, T. Henderson, M. V. Klein, R. Fischer, T. L. Lin, P. J. Grunthaner and R. W. Fathauer. Their work appears in journals such as Journal of Applied Physics, Thin Solid Films and Journal of Crystal Growth.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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