David Laleyan

797 total citations
27 papers, 648 citations indexed

About

David Laleyan is a scholar working on Materials Chemistry, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, David Laleyan has authored 27 papers receiving a total of 648 indexed citations (citations by other indexed papers that have themselves been cited), including 17 papers in Materials Chemistry, 15 papers in Condensed Matter Physics and 14 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in David Laleyan's work include GaN-based semiconductor devices and materials (15 papers), Ga2O3 and related materials (14 papers) and ZnO doping and properties (10 papers). David Laleyan is often cited by papers focused on GaN-based semiconductor devices and materials (15 papers), Ga2O3 and related materials (14 papers) and ZnO doping and properties (10 papers). David Laleyan collaborates with scholars based in United States, Canada and China. David Laleyan's co-authors include Zetian Mi, Ayush Pandey, Ping Wang, Yi Sun, Songrui Zhao, Yuanpeng Wu, Yongjie Wang, Emmanouil Kioupakis, Gianluigi A. Botton and Steffi Y. Woo and has published in prestigious journals such as Advanced Materials, Nano Letters and Applied Physics Letters.

In The Last Decade

David Laleyan

25 papers receiving 634 citations

Peers

David Laleyan

CMP

EOMM

EEE

Christian Hauswald Germany

Sung Ryong Ryu South Korea

Pavel Aseev Spain

Asad J. Mughal United States

Christian Nenstiel Germany

Z. L. Xie China

E. Cicek United States

Xuecheng Wei China

Ching-Hsueh Chiu Taiwan

A. Azizur Rahman India

Christian Hauswald Germany

David Laleyan

280 ×0.7

370 ×1.0

CMP

170 ×0.7

227 ×1.1

EOMM

140 ×0.8

EEE

Citations per year, relative to David Laleyan David Laleyan (= 1×) peers Christian Hauswald

Countries citing papers authored by David Laleyan

Since Specialization

Citations

This map shows the geographic impact of David Laleyan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by David Laleyan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites David Laleyan more than expected).

Fields of papers citing papers by David Laleyan

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by David Laleyan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by David Laleyan. The network helps show where David Laleyan may publish in the future.

Co-authorship network of co-authors of David Laleyan

This figure shows the co-authorship network connecting the top 25 collaborators of David Laleyan. A scholar is included among the top collaborators of David Laleyan based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with David Laleyan. David Laleyan is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Laleyan, David, Ying Zhao, Yuanpeng Wu, et al.. (2023). Epitaxial hexagonal boron nitride with high quantum efficiency. APL Materials. 11(5). 6 indexed citations

Wang, Ping, Nguyen M. Vu, David Laleyan, et al.. (2022). Scalable Synthesis of Monolayer Hexagonal Boron Nitride on Graphene with Giant Bandgap Renormalization. Advanced Materials. 34(21). e2201387–e2201387. 28 indexed citations

Wang, Ping, David Laleyan, Ayush Pandey, et al.. (2021). Oxygen defect dominated photoluminescence emission of ScxAl1−xN grown by molecular beam epitaxy. Applied Physics Letters. 118(3). 31 indexed citations

Wang, Ping, Ayush Pandey, Jiseok Gim, et al.. (2020). Graphene-assisted molecular beam epitaxy of AlN for AlGaN deep-ultraviolet light-emitting diodes. Applied Physics Letters. 116(17). 27 indexed citations

Wang, Ping, David Laleyan, Ayush Pandey, Yi Sun, & Zetian Mi. (2020). Molecular beam epitaxy and characterization of wurtzite ScxAl1−xN. Applied Physics Letters. 116(15). 72 indexed citations

Wu, Yuanpeng, Ping Wang, David Laleyan, et al.. (2020). Hyperspectral absorption of semiconductor monolayer crystals. Applied Physics Letters. 116(18). 2 indexed citations

Sun, Yi, Ping Wang, David Laleyan, et al.. (2020). High Quality Factor Aluminum Nitride on Sapphire Resonators at Infrared and Near Infrared Wavelengths. Conference on Lasers and Electro-Optics. 20. STu4O.7–STu4O.7.

Sun, Yi, David Laleyan, Ping Wang, et al.. (2019). High-Q Resonators on Single Crystal Aluminum Nitride Grown by Molecular Beam Epitaxy. Conference on Lasers and Electro-Optics. SF2I.6–SF2I.6. 1 indexed citations

Sun, Yi, David Laleyan, Ping Wang, et al.. (2019). High-Q Resonators on Single Crystal Aluminum Nitride Grown by Molecular Beam Epitaxy. Conference on Lasers and Electro-Optics.

10.

Sun, Yi, David Laleyan, Ping Wang, et al.. (2019). Ultrahigh Q microring resonators using a single-crystal aluminum-nitride-on-sapphire platform. Optics Letters. 44(23). 5679–5679. 28 indexed citations

11.

Pandey, Ayush, Zihao Deng, David Laleyan, et al.. (2019). Enhanced doping efficiency of ultrawide band gap semiconductors by metal-semiconductor junction assisted epitaxy. Physical Review Materials. 3(5). 25 indexed citations

12.

Mi, Zetian, Xianhe Liu, Faqrul A. Chowdhury, et al.. (2019). III-Nitride Nanocrystals: From Low Threshold Ultraviolet Laser Diodes to High Efficiency Artificial Photosynthesis. 1–2. 1 indexed citations

13.

Sun, Yi, David Laleyan, Ping Wang, et al.. (2019). Ultra-High-Q Microring Resonators using Single Crystal Aluminum Nitride on Sapphire Platform. 1–2. 1 indexed citations

14.

Asaba, Tomoya, Yongjie Wang, Gang Li, et al.. (2018). Magnetic Field Enhanced Superconductivity in Epitaxial Thin Film WTe2. Scientific Reports. 8(1). 6520–6520. 31 indexed citations

15.

Liu, Xianhe, et al.. (2018). Charge carrier transport properties of Mg-doped Al_0.6Ga_0.4N grown by molecular beam epitaxy. Semiconductor Science and Technology. 33(8). 85005–85005. 16 indexed citations

16.

Pandey, Ayush, Aniruddha Bhattacharya, Jiseok Gim, et al.. (2018). Optical and interface characteristics of Al0.56Ga0.44N/Al0.62Ga0.38N multiquantum wells with ∼280 nm emission grown by plasma-assisted molecular beam epitaxy. Journal of Crystal Growth. 508. 66–71. 6 indexed citations

17.

Laleyan, David, et al.. (2018). Molecular beam epitaxy and characterization of Al0.6Ga0.4N epilayers. Journal of Crystal Growth. 507. 87–92. 9 indexed citations

18.

Zhao, Songrui, Steffi Y. Woo, Sharif Sadaf, et al.. (2016). Molecular beam epitaxy growth of Al-rich AlGaN nanowires for deep ultraviolet optoelectronics. APL Materials. 4(8). 62 indexed citations

19.

Zhang, Shaofei, David Laleyan, Qi Wang, & Zetian Mi. (2015). Impact of nanowire geometry on the carrier transport in GaN/InGaN axial nanowire light‐emitting diodes. The Journal of Engineering. 2015(10). 299–301. 1 indexed citations

20.

Zhang, Shaofei, Ashfiqua T. Connie, David Laleyan, et al.. (2014). On the Carrier Injection Efficiency and Thermal Property of InGaN/GaN Axial Nanowire Light Emitting Diodes. IEEE Journal of Quantum Electronics. 50(6). 483–490. 33 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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