Tien‐Tung Luong

418 total citations
17 papers, 339 citations indexed

About

Tien‐Tung Luong is a scholar working on Condensed Matter Physics, Materials Chemistry and Electrical and Electronic Engineering. According to data from OpenAlex, Tien‐Tung Luong has authored 17 papers receiving a total of 339 indexed citations (citations by other indexed papers that have themselves been cited), including 13 papers in Condensed Matter Physics, 10 papers in Materials Chemistry and 6 papers in Electrical and Electronic Engineering. Recurrent topics in Tien‐Tung Luong's work include GaN-based semiconductor devices and materials (13 papers), ZnO doping and properties (7 papers) and Ga2O3 and related materials (6 papers). Tien‐Tung Luong is often cited by papers focused on GaN-based semiconductor devices and materials (13 papers), ZnO doping and properties (7 papers) and Ga2O3 and related materials (6 papers). Tien‐Tung Luong collaborates with scholars based in Taiwan, Japan and Malaysia. Tien‐Tung Luong's co-authors include Edward Yi Chang, Yen‐Teng Ho, Yung‐Yi Tu, Wen‐Hao Chang, Wei‐Ting Hsu, Binh Tinh Tran, Yuen‐Yee Wong, Yen‐Yu Chen, Li Chang and Sankalp Kumar Singh and has published in prestigious journals such as Journal of Applied Physics, Solar Energy Materials and Solar Cells and Japanese Journal of Applied Physics.

In The Last Decade

Tien‐Tung Luong

17 papers receiving 328 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Tien‐Tung Luong Taiwan	11	188	183	169	95	63	17	339
D. Y. Kim South Korea	9	148 0.8×	195 1.1×	122 0.7×	159 1.7×	44 0.7×	18	317
Babatunde Alawode United States	2	178 0.9×	375 2.0×	100 0.6×	120 1.3×	114 1.8×	2	469
Jyh-Rong Gong Taiwan	11	151 0.8×	219 1.2×	186 1.1×	166 1.7×	55 0.9×	47	357
Kengo Nagata Japan	11	168 0.9×	134 0.7×	212 1.3×	171 1.8×	99 1.6×	29	356
Qiao Jin China	12	97 0.5×	212 1.2×	85 0.5×	166 1.7×	30 0.5×	30	294
Xuefen Cai China	11	162 0.9×	201 1.1×	65 0.4×	108 1.1×	34 0.5×	33	306
Arun Malla Chowdhury India	10	165 0.9×	215 1.2×	130 0.8×	152 1.6×	102 1.6×	17	338
Dong Sing Wuu Taiwan	9	258 1.4×	271 1.5×	92 0.5×	81 0.9×	59 0.9×	30	367
Geoffrey Tse China	8	106 0.6×	255 1.4×	128 0.8×	88 0.9×	97 1.5×	31	360

Countries citing papers authored by Tien‐Tung Luong

Since Specialization

Citations

This map shows the geographic impact of Tien‐Tung Luong's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Tien‐Tung Luong with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Tien‐Tung Luong more than expected).

Fields of papers citing papers by Tien‐Tung Luong

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Tien‐Tung Luong. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Tien‐Tung Luong. The network helps show where Tien‐Tung Luong may publish in the future.

Co-authorship network of co-authors of Tien‐Tung Luong

This figure shows the co-authorship network connecting the top 25 collaborators of Tien‐Tung Luong. A scholar is included among the top collaborators of Tien‐Tung Luong based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Tien‐Tung Luong. Tien‐Tung Luong is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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17 of 17 papers shown

Chen, Kun‐Ming, Bo‐Yuan Chen, Guo‐Wei Huang, et al.. (2020). Study of Charge Trapping Effects on AlGaN/GaN HEMTs Under UV Illumination With Pulsed I-V Measurement. IEEE Transactions on Device and Materials Reliability. 20(2). 436–441. 23 indexed citations

Zhao, Ming, Valentina Spampinato, Alexis Franquet, et al.. (2020). The Influence of AlN Nucleation Layer on Radio Frequency Transmission Loss of AlN‐on‐Si Heterostructure. physica status solidi (a). 217(7). 10 indexed citations

Ho, Yen‐Teng, et al.. (2018). Electrical Properties of Compound 2D Semiconductor Mo<inf>1−x</inf>Nb<inf>x</inf>S<inf>2</inf>. 37. 1–4. 1 indexed citations

Luong, Tien‐Tung, et al.. (2017). Phase separation-suppressed and strain-modulated improvement of crystalline quality of AlGaN epitaxial layer grown by MOCVD. Microelectronics Reliability. 83. 286–292. 12 indexed citations

Luong, Tien‐Tung, et al.. (2017). Threading dislocation reduction in three-dimensionally grown GaN islands on Si (111) substrate with AlN/AlGaN buffer layers. Journal of Applied Physics. 122(10). 12 indexed citations

Luong, Tien‐Tung, et al.. (2017). Buffer-optimized improvement in RF loss of AlGaN/GaN HEMTs on 4-inch silicon (111). 1–3. 4 indexed citations

Luong, Tien‐Tung, et al.. (2017). RF loss mechanisms in GaN‐based high‐electron‐mobility‐transistor on silicon: Role of an inversion channel at the AlN/Si interface. physica status solidi (a). 214(7). 34 indexed citations

Ho, Yen‐Teng, et al.. (2016). Post sulfurization effect on the MoS2 grown by pulsed laser deposition. 1–3. 1 indexed citations

Luong, Tien‐Tung, Binh Tinh Tran, Yen‐Teng Ho, et al.. (2015). 2H-silicon carbide epitaxial growth on c-plane sapphire substrate using an AlN buffer layer and effects of surface pre-treatments. Electronic Materials Letters. 11(3). 352–359. 9 indexed citations

10.

Luong, Tien‐Tung, et al.. (2015). Performance improvements of AlGaN/GaN HEMTs by strain modification and unintentional carbon incorporation. Electronic Materials Letters. 11(2). 217–224. 13 indexed citations

11.

Ho, Yen‐Teng, Tien‐Tung Luong, Wei‐Ting Hsu, et al.. (2015). Layered MoS₂ grown on c ‐sapphire by pulsed laser deposition. physica status solidi (RRL) - Rapid Research Letters. 9(3). 187–191. 148 indexed citations

12.

Luong, Tien‐Tung, et al.. (2014). Barrier Strain and Carbon Incorporation‐Engineered Performance Improvements for AlGaN/GaN High Electron Mobility Transistors^**. Chemical Vapor Deposition. 21(1-2-3). 33–40. 8 indexed citations

13.

Tran, Binh Tinh, et al.. (2012). Fabrication and characterization of n-In0.4Ga0.6N/p-Si solar cell. Solar Energy Materials and Solar Cells. 102. 208–211. 26 indexed citations

14.

Wu, Chia-Hsun, et al.. (2012). Effect of Graded Al_xGa_1-xN Layers on the Properties of GaN Grown on Patterned Si Substrates. Japanese Journal of Applied Physics. 51(2R). 25505–25505. 10 indexed citations

15.

Wu, Chia-Hsun, Edward Yi Chang, Chien-I Kuo, et al.. (2012). Effect of Graded Al_xGa_1-xN Layers on the Properties of GaN Grown on Patterned Si Substrates. Japanese Journal of Applied Physics. 51(2R). 25505–25505. 3 indexed citations

16.

Wong, Yuen‐Yee, et al.. (2012). Growth and fabrication of AlGaN/GaN HEMT on SiC substrate. 48. 729–732. 13 indexed citations

17.

Chang, Edward Yi, et al.. (2010). Effects of AlxGa1−xN interlayer for GaN epilayer grown on Si substrate by metal-organic chemical-vapor deposition. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 28(3). 473–477. 12 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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