T. H. Myers

3.6k total citations
172 papers, 3.0k citations indexed

About

T. H. Myers is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, T. H. Myers has authored 172 papers receiving a total of 3.0k indexed citations (citations by other indexed papers that have themselves been cited), including 138 papers in Electrical and Electronic Engineering, 88 papers in Materials Chemistry and 58 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in T. H. Myers's work include Advanced Semiconductor Detectors and Materials (78 papers), Chalcogenide Semiconductor Thin Films (77 papers) and Semiconductor Quantum Structures and Devices (45 papers). T. H. Myers is often cited by papers focused on Advanced Semiconductor Detectors and Materials (78 papers), Chalcogenide Semiconductor Thin Films (77 papers) and Semiconductor Quantum Structures and Devices (45 papers). T. H. Myers collaborates with scholars based in United States, New Zealand and United Kingdom. T. H. Myers's co-authors include J. F. Schetzina, N. C. Giles, Lucia Romano, C. H. Swartz, A. J. Ptak, R. N. Bicknell, Zhonghai Yu, John E. Northrup, Michelle Richards‐Babb and Y. C. Lo and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

T. H. Myers

170 papers receiving 2.9k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
T. H. Myers United States 30 2.1k 1.6k 1.1k 989 682 172 3.0k
W. C. Mitchel United States 38 3.1k 1.5× 1.6k 1.0× 1.3k 1.2× 2.2k 2.2× 977 1.4× 256 4.7k
J. P. Faurie France 33 2.5k 1.2× 1.4k 0.9× 541 0.5× 1.8k 1.8× 370 0.5× 156 3.1k
J. F. Schetzina United States 34 3.2k 1.5× 2.0k 1.2× 1.1k 1.0× 2.3k 2.3× 638 0.9× 204 4.3k
A. Cavallini Italy 30 2.8k 1.3× 1.1k 0.7× 693 0.6× 1.2k 1.2× 442 0.6× 242 3.5k
G. Bahir Israel 27 1.7k 0.8× 788 0.5× 906 0.8× 1.5k 1.5× 574 0.8× 132 2.7k
P. de Mierry France 26 873 0.4× 843 0.5× 1.6k 1.5× 807 0.8× 1.1k 1.6× 105 2.4k
Albert G. Baca United States 36 2.6k 1.3× 1.1k 0.7× 2.5k 2.3× 1.1k 1.1× 1.4k 2.1× 162 3.9k
S. Oktyabrsky United States 25 1.9k 0.9× 1.2k 0.8× 453 0.4× 958 1.0× 458 0.7× 192 2.7k
B. Wilkens United States 28 939 0.5× 2.0k 1.2× 1.1k 1.0× 720 0.7× 925 1.4× 63 2.9k
Mao Lin United States 18 2.2k 1.1× 1.5k 1.0× 2.6k 2.4× 1.4k 1.4× 1.1k 1.6× 34 4.1k

Countries citing papers authored by T. H. Myers

Since Specialization
Citations

This map shows the geographic impact of T. H. Myers's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. H. Myers with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. H. Myers more than expected).

Fields of papers citing papers by T. H. Myers

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. H. Myers. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. H. Myers. The network helps show where T. H. Myers may publish in the future.

Co-authorship network of co-authors of T. H. Myers

This figure shows the co-authorship network connecting the top 25 collaborators of T. H. Myers. A scholar is included among the top collaborators of T. H. Myers based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T. H. Myers. T. H. Myers is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Kuciauskas, Darius, et al.. (2017). Time-resolved correlative optical microscopy of charge-carrier transport, recombination, and space-charge fields in CdTe heterostructures. Applied Physics Letters. 110(8). 18 indexed citations
2.
Tuomisto, Filip, Vera Prozheeva, Ilja Makkonen, et al.. (2017). Amphoteric Be in GaN: Experimental Evidence for Switching between Substitutional and Interstitial Lattice Sites. Physical Review Letters. 119(19). 196404–196404. 45 indexed citations
3.
Edirisooriya, M., P. A. R. D. Jayathilaka, C. H. Swartz, et al.. (2017). Determining and Controlling the Magnesium Composition in CdTe/CdMgTe Heterostructures. Journal of Electronic Materials. 46(9). 5379–5385. 8 indexed citations
4.
Zaunbrecher, Katherine, Darius Kuciauskas, C. H. Swartz, et al.. (2016). Impact of extended defects on recombination in CdTe heterostructures grown by molecular beam epitaxy. Applied Physics Letters. 109(9). 20 indexed citations
5.
Swartz, C. H., Katherine Zaunbrecher, Sandeep Sohal, et al.. (2016). Factors influencing photoluminescence and photocarrier lifetime in CdSeTe/CdMgTe double heterostructures. Journal of Applied Physics. 120(16). 165305–165305. 11 indexed citations
6.
Peiris, F. C., et al.. (2015). Dielectric functions and carrier concentrations of Hg1−xCdxSe films determined by spectroscopic ellipsometry. Applied Physics Letters. 107(7). 5 indexed citations
7.
Nazari, Mohammad, et al.. (2015). Raman measurements of substrate temperature in a molecular beam epitaxy growth chamber. Review of Scientific Instruments. 86(1). 14904–14904. 2 indexed citations
8.
Swartz, C. H., M. Edirisooriya, P. A. R. D. Jayathilaka, et al.. (2014). Radiative and interfacial recombination in CdTe heterostructures. Applied Physics Letters. 105(22). 43 indexed citations
9.
10.
Jain, Abhishek, Xiaojun Weng, Srinivasan Raghavan, et al.. (2008). Effect of polarity on the growth of InN films by metalorganic chemical vapor deposition. Journal of Applied Physics. 104(5). 20 indexed citations
11.
Myers, T. H., et al.. (2007). The Use of Cathodoluminescence during Molecular Beam Epitaxy Growth of Gallium Nitride to Determine Substrate Temperature. Journal of Electronic Materials. 36(4). 431–435. 3 indexed citations
12.
Swartz, C. H., Randy P. Tompkins, N. C. Giles, et al.. (2006). Accurate measurement of composition, carrier concentration, and photoconductive lifetime in Hg1−xCdxTe grown by molecular beam epitaxy. Journal of Electronic Materials. 35(6). 1360–1368. 5 indexed citations
13.
Swartz, C. H., Randy P. Tompkins, N. C. Giles, et al.. (2004). Investigation of multiple carrier effects in InN epilayers using variable magnetic field Hall measurements. Journal of Crystal Growth. 269(1). 29–34. 77 indexed citations
14.
Fang, Z-Q., B. Claflin, D. C. Look, et al.. (2002). High-Temperature Illumination-Induced Metastability in Undoped Semi-Insulating GaN Grown by Metalorganic Vapor Phase Epitaxy. MRS Proceedings. 743. 2 indexed citations
15.
VanMil, Brenda L., Aaron J. Ptak, N. C. Giles, et al.. (2001). The effect of high energy electrons during the growth of ZnSe and ZnMgSe by molecular beam epitaxy. Journal of Electronic Materials. 30(6). 785–788. 1 indexed citations
16.
Manasreh, M. O., T. H. Myers, & F. H. Julien. (1997). Infrared applications of semiconductors - materials, processing, and devices : symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A. 2 indexed citations
17.
Reisinger, A. R., et al.. (1992). Carrier lifetime in HgTe/CdTe superlattices grown by photoassisted molecular beam epitaxy. Applied Physics Letters. 61(6). 699–701. 13 indexed citations
18.
Myers, T. H., R. W. Yanka, James P. Karins, et al.. (1986). Characterization of HgCdTe Epilayers and HgTe-CdTe Superlattice Structures Grown by Molecular Beam Epitaxy. MRS Proceedings. 90. 4 indexed citations
19.
Myers, T. H., et al.. (1983). Effect of surface preparation on the 77 K photoluminescence of CdTe. Journal of Applied Physics. 54(7). 4232–4234. 37 indexed citations
20.
Myers, T. H., A. W. Waltner, & J. F. Schetzina. (1982). Properties of CdTe-Te alloy films prepared using molecular beams. Journal of Applied Physics. 53(8). 5697–5702. 22 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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