B. Surma

791 total citations
87 papers, 459 citations indexed

About

B. Surma is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, B. Surma has authored 87 papers receiving a total of 459 indexed citations (citations by other indexed papers that have themselves been cited), including 74 papers in Electrical and Electronic Engineering, 50 papers in Materials Chemistry and 45 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in B. Surma's work include Silicon and Solar Cell Technologies (56 papers), Silicon Nanostructures and Photoluminescence (41 papers) and Semiconductor materials and interfaces (31 papers). B. Surma is often cited by papers focused on Silicon and Solar Cell Technologies (56 papers), Silicon Nanostructures and Photoluminescence (41 papers) and Semiconductor materials and interfaces (31 papers). B. Surma collaborates with scholars based in Poland, Russia and Greece. B. Surma's co-authors include A. Misiuk, I. Pracka, M. Malinowski, J. Bąk‐Misiuk, T. Łukasiewicz, I. V. Antonova, C. A. Londos, J. Jun, S.M. Kaczmarek and Zygmunt Mierczyk and has published in prestigious journals such as Applied Physics Letters, Journal of Physics Condensed Matter and Journal of Alloys and Compounds.

In The Last Decade

B. Surma

75 papers receiving 442 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
B. Surma Poland 12 337 267 192 69 62 87 459
Helmuth Meissner United States 15 522 1.5× 117 0.4× 407 2.1× 120 1.7× 50 0.8× 51 637
A. Cacciato Belgium 14 581 1.7× 251 0.9× 127 0.7× 27 0.4× 70 1.1× 64 672
A. M. Piro Italy 13 469 1.4× 388 1.5× 226 1.2× 55 0.8× 100 1.6× 41 586
Tadamasa Kimura Japan 14 343 1.0× 318 1.2× 181 0.9× 30 0.4× 69 1.1× 41 535
E. Holzenkämpfer Germany 6 273 0.8× 244 0.9× 68 0.4× 46 0.7× 92 1.5× 8 354
J. P. Gailliard France 12 442 1.3× 168 0.6× 305 1.6× 38 0.6× 40 0.6× 25 540
S. Habermehl United States 13 430 1.3× 208 0.8× 150 0.8× 27 0.4× 99 1.6× 41 536
P. Gaworzewski Germany 15 599 1.8× 255 1.0× 274 1.4× 15 0.2× 57 0.9× 44 690
J. Heindl Germany 10 468 1.4× 117 0.4× 124 0.6× 68 1.0× 57 0.9× 16 559
D. V. Marin Russia 12 363 1.1× 321 1.2× 162 0.8× 16 0.2× 137 2.2× 85 473

Countries citing papers authored by B. Surma

Since Specialization
Citations

This map shows the geographic impact of B. Surma's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. Surma with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. Surma more than expected).

Fields of papers citing papers by B. Surma

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. Surma. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. Surma. The network helps show where B. Surma may publish in the future.

Co-authorship network of co-authors of B. Surma

This figure shows the co-authorship network connecting the top 25 collaborators of B. Surma. A scholar is included among the top collaborators of B. Surma based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with B. Surma. B. Surma is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Grasza, K., I.A. Kowalik, D. Arvanitis, et al.. (2013). Growth of SiC by PVT method in the presence of cerium dopant. Journal of Crystal Growth. 377. 88–95. 5 indexed citations
2.
Kaczmarczyk, Mariusz, Olof Engström, M. Kaniewska, et al.. (2008). Comprehensive study of InAs/GaAs quantum dots by means of complementary methods. Chalmers Publication Library (Chalmers University of Technology).
3.
Misiuk, A., B. Surma, J. Bąk‐Misiuk, et al.. (2008). Defects in single-crystalline Ge-doped silicon revealed by annealing under high hydrostatic pressure. Acta Crystallographica Section A Foundations of Crystallography. 64(a1). C441–C441. 1 indexed citations
4.
Misiuk, A., N. V. Abrosimov, B. Surma, et al.. (2008). Effect of annealing under stress on defect structure of Si–Ge. Materials Science and Engineering B. 154-155. 137–140. 5 indexed citations
5.
Surma, B., et al.. (2008). Some new photoluminescence features of W line for neutron-irradiated MCz-Si and FZ-Si. 273 274. 2561–2564. 2 indexed citations
6.
Wzorek, M., A. Czerwiński, J. Ratajczak, et al.. (2007). Defect structure in self‐implanted silicon annealed under enhanced hydrostatic pressure – electron microscopy study. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 4(8). 3020–3024. 3 indexed citations
7.
Misiuk, A., J. Bąk‐Misiuk, B. Surma, et al.. (2006). Structure and magnetic properties of Si:Mn annealed under enhanced hydrostatic pressure. Journal of Alloys and Compounds. 423(1-2). 201–204. 16 indexed citations
8.
Misiuk, A., B. Surma, C. A. Londos, et al.. (2005). Oxygen precipitation and creation of defects in neutron irradiated Cz‐Si annealed under high pressure. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 2(6). 1812–1816. 6 indexed citations
9.
Wieteska, K., W. Wierzchowski, A. Misiuk, et al.. (2005). Synchrotron topographic and photoluminescence investigations of porous layer in HT‐HP treated silicon implanted with deuterium ions. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 2(9). 3471–3475.
10.
Misiuk, A., et al.. (2005). Effect of annealing under enhanced hydrostatic pressure on the microstructure of Cz–Si:H, He. Journal of Alloys and Compounds. 401(1-2). 205–211. 2 indexed citations
11.
Bąk‐Misiuk, J., et al.. (2005). The structures prepared by high temperature–pressure treatment of Cz-Si heavily implanted with He+. Journal of Alloys and Compounds. 401(1-2). 231–237. 2 indexed citations
12.
Misiuk, A., et al.. (2005). BURIED NANO-LAYERS IN SILICON CO-IMPLANTED WITH H 2 + /He + AND ANNEALED UNDER HIGH HYDROSTATIC PRESSURE.
13.
Yang, Deren, Jin Xu, Xiangyang Ma, et al.. (2004). Microstructure of high temperature–pressure treated nitrogen-doped Czochralski silicon. Journal of Alloys and Compounds. 382(1-2). 275–277. 1 indexed citations
14.
Ammerlaan, C.A.J., V. V. Emtsev, G. A. Oganesyan, et al.. (2002). Double thermal donors in Czochralski‐grown silicon heat‐treated under atmospheric and high hydrostatic pressures. physica status solidi (b). 235(1). 75–78. 22 indexed citations
15.
Romano‐Rodrı́guez, A., M. López, J.R. Morante, et al.. (2000). TEM characterisation of high pressure–high-temperature-treated Czochralski silicon samples. Materials Science and Engineering B. 73(1-3). 250–254. 1 indexed citations
16.
Korsunska, N., L. Khomenkova, М. К. Шейнкман, et al.. (1998). Two ways of porous Si photoluminescence excitation. Materials Science and Engineering B. 51(1-3). 162–165. 8 indexed citations
17.
Antonova, I. V., et al.. (1997). Oxygen Precipitate Nucleation Process in Silicon with Different Oxygen Concentration and Structural Perfection. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 57-58. 161–166. 6 indexed citations
18.
Misiuk, A., et al.. (1997). Effect of Stress Induced Defects on Electrical Properties of Czochralski Grown Silicon. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 57-58. 393–400. 21 indexed citations
19.
Misiuk, A., et al.. (1996). Stress-induced oxygen precipitation in CzSi. Materials Science and Engineering B. 36(1-3). 30–32. 16 indexed citations
20.
Surma, B., et al.. (1996). FTIR study of oxygen precipitation in high-pressure-treated Cz-Si contaminated by transition metals. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 2780. 160–160. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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