Ennis T. Ogawa

500 total citations
20 papers, 358 citations indexed

About

Ennis T. Ogawa is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Materials Chemistry. According to data from OpenAlex, Ennis T. Ogawa has authored 20 papers receiving a total of 358 indexed citations (citations by other indexed papers that have themselves been cited), including 14 papers in Electrical and Electronic Engineering, 12 papers in Electronic, Optical and Magnetic Materials and 7 papers in Materials Chemistry. Recurrent topics in Ennis T. Ogawa's work include Copper Interconnects and Reliability (11 papers), Semiconductor materials and devices (11 papers) and Electronic Packaging and Soldering Technologies (5 papers). Ennis T. Ogawa is often cited by papers focused on Copper Interconnects and Reliability (11 papers), Semiconductor materials and devices (11 papers) and Electronic Packaging and Soldering Technologies (5 papers). Ennis T. Ogawa collaborates with scholars based in United States. Ennis T. Ogawa's co-authors include Paul S. Ho, J. W. McPherson, V. Blaschke, Patrick Justison, Jin‐Young Kim, Xia Lu, Robert Havemann, Chuan Hu, Andrew J. McKerrow and Jie-Hua Zhao and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Magnetics.

In The Last Decade

Ennis T. Ogawa

18 papers receiving 342 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Ennis T. Ogawa United States 10 303 263 67 49 49 20 358
V. Arnal France 11 245 0.8× 192 0.7× 65 1.0× 38 0.8× 59 1.2× 44 297
David De Roest Belgium 9 297 1.0× 220 0.8× 110 1.6× 23 0.5× 53 1.1× 52 332
H. Rathore United States 7 323 1.1× 244 0.9× 62 0.9× 30 0.6× 43 0.9× 15 367
D. Badami United States 7 283 0.9× 206 0.8× 52 0.8× 26 0.5× 64 1.3× 11 330
D. Jawarani United States 10 284 0.9× 139 0.5× 44 0.7× 67 1.4× 80 1.6× 38 336
S. Luce United States 6 259 0.9× 146 0.6× 43 0.6× 53 1.1× 40 0.8× 11 300
Jeff Gambino United States 10 310 1.0× 108 0.4× 27 0.4× 48 1.0× 62 1.3× 59 344
T. Spooner United States 13 412 1.4× 312 1.2× 76 1.1× 64 1.3× 83 1.7× 49 472
Oliver Aubel Germany 11 315 1.0× 270 1.0× 47 0.7× 22 0.4× 29 0.6× 45 357
R. Augur Netherlands 9 233 0.8× 171 0.7× 51 0.8× 42 0.9× 49 1.0× 27 269

Countries citing papers authored by Ennis T. Ogawa

Since Specialization
Citations

This map shows the geographic impact of Ennis T. Ogawa's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Ennis T. Ogawa with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Ennis T. Ogawa more than expected).

Fields of papers citing papers by Ennis T. Ogawa

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Ennis T. Ogawa. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Ennis T. Ogawa. The network helps show where Ennis T. Ogawa may publish in the future.

Co-authorship network of co-authors of Ennis T. Ogawa

This figure shows the co-authorship network connecting the top 25 collaborators of Ennis T. Ogawa. A scholar is included among the top collaborators of Ennis T. Ogawa based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Ennis T. Ogawa. Ennis T. Ogawa is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Narasimham, Balaji, Ennis T. Ogawa, Saket Gupta, et al.. (2017). Influence of polonium diffusion at elevated temperature on the alpha emission rate and memory SER performance. 3D–4.1.
2.
Narasimham, Balaji, et al.. (2017). SRAM PUF quality and reliability comparison for 28 nm planar vs. 16 nm FinFET CMOS processes. PM–11.1. 9 indexed citations
3.
Kim, Jin‐Young, Ennis T. Ogawa, & J. W. McPherson. (2007). Time Dependent Dielectric Breakdown Characteristics of Low-k Dielectric (SiOC) Over a Wide Range of Test Areas and Electric Fields. 399–404. 35 indexed citations
5.
Ogawa, Ennis T., et al.. (2005). Reliability analysis method for low-k interconnect dielectrics breakdown in integrated circuits. Journal of Applied Physics. 98(3). 36 indexed citations
6.
Ho, Paul S., et al.. (2004). Effect of low k dielectrics on electromigration reliability for Cu interconnects. Materials Science in Semiconductor Processing. 7(3). 157–163. 22 indexed citations
7.
Ho, Paul S., et al.. (2003). Impact of Low k Dielectrics on Electromigration Reliability for Cu Interconnects. MRS Proceedings. 766. 6 indexed citations
8.
Ogawa, Ennis T., et al.. (2003). Electromigration reliability of dual-damascene Cu/porous methylsilsesquioxane low k interconnects. Applied Physics Letters. 82(13). 2032–2034. 31 indexed citations
9.
Lu, Xia, et al.. (2002). Electromigration in Submicron Dual-damascene Cu/low-k Interconnects. MRS Proceedings. 716.
10.
Ogawa, Ennis T., et al.. (2002). Reliability and early failure in Cu/oxide dual-damascene interconnects. Journal of Electronic Materials. 31(10). 1052–1058. 5 indexed citations
11.
Ogawa, Ennis T., et al.. (2001). Direct observation of a critical length effect in dual-damascene Cu/oxide interconnects. Applied Physics Letters. 78(18). 2652–2654. 50 indexed citations
12.
Ogawa, Ennis T., et al.. (2001). Electromigration critical length effect in Cu/oxide dual-damascene interconnects. Applied Physics Letters. 79(20). 3236–3238. 68 indexed citations
13.
Ogawa, Ennis T., V. Blaschke, Ki‐Don Lee, et al.. (2000). Electromigration Reliability of Dual-Damascene Cu/Oxide Interconnects. MRS Proceedings. 612. 13 indexed citations
14.
Ogawa, Ennis T., Chuan Hu, & Paul S. Ho. (1999). Thermal diffusivity measurement of polymeric thin films using the photothermal displacement technique. I. Free-standing film case. Journal of Applied Physics. 86(11). 6018–6027. 14 indexed citations
15.
Zhao, Jie-Hua, et al.. (1999). Thermomechanical properties and moisture uptake characteristics of hydrogen silsesquioxane submicron films. Applied Physics Letters. 74(7). 944–946. 42 indexed citations
16.
Hu, Chuan, Ennis T. Ogawa, & Paul S. Ho. (1999). Thermal diffusivity measurement of polymeric thin films using the photothermal displacement technique. II. On-wafer measurement. Journal of Applied Physics. 86(11). 6028–6038. 6 indexed citations
17.
Hu, Chuan, et al.. (1998). Study of the thermal properties of polymeric dielectric materials by photothermal technique. MRS Proceedings. 511. 6 indexed citations
18.
Silver, Richard M., Ennis T. Ogawa, S. H. Pan, & Alex de Lozanne. (1991). In-situ formation of BSCCO thin films by plasma assisted thermal evaporation. IEEE Transactions on Magnetics. 27(2). 1215–1218. 4 indexed citations
19.
Pan, S. H., et al.. (1989). Thin films of Y Ba Cu O grown in-situ by co-evaporation and plasma oxidation. Physica C Superconductivity. 162-164. 657–658. 3 indexed citations
20.
Silver, Richard M., et al.. (1989). Properties of in-situ superconducting thin films of Y-Ba-Cu-O on Si, Al/sub 2/O/sub 3/, and SrTiO/sub 3/ substrates. IEEE Transactions on Magnetics. 25(2). 2526–2529. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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