R. Augur

556 total citations
27 papers, 269 citations indexed

About

R. Augur is a scholar working on Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, R. Augur has authored 27 papers receiving a total of 269 indexed citations (citations by other indexed papers that have themselves been cited), including 22 papers in Electronic, Optical and Magnetic Materials, 21 papers in Electrical and Electronic Engineering and 8 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in R. Augur's work include Copper Interconnects and Reliability (22 papers), Semiconductor materials and devices (14 papers) and Semiconductor materials and interfaces (8 papers). R. Augur is often cited by papers focused on Copper Interconnects and Reliability (22 papers), Semiconductor materials and devices (14 papers) and Semiconductor materials and interfaces (8 papers). R. Augur collaborates with scholars based in Netherlands, United States and Germany. R. Augur's co-authors include Marilyn A. Rasco, A.G. Dirks, Paul Gillespie, Choong-Un Kim, R.J. Gutmann, R.A.M. Wolters, Yongchai Kwon, Jian‐Qiang Lu, Robert Havemann and J. J. McMahon and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

R. Augur

23 papers receiving 254 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
R. Augur Netherlands	9	233	171	51	49	42	27	269
E. Richard France	6	245 1.1×	201 1.2×	72 1.4×	83 1.7×	33 0.8×	21	296
I. Vervoort Belgium	5	315 1.4×	251 1.5×	75 1.5×	103 2.1×	40 1.0×	19	365
V. Arnal France	11	245 1.1×	192 1.1×	65 1.3×	59 1.2×	38 0.9×	44	297
Yong Kong Siew Belgium	9	204 0.9×	125 0.7×	30 0.6×	50 1.0×	42 1.0×	25	246
R. Schulz United States	7	296 1.3×	124 0.7×	30 0.6×	29 0.6×	36 0.9×	14	326
N. Jourdan Belgium	11	309 1.3×	161 0.9×	37 0.7×	51 1.0×	36 0.9×	26	342
Patrick Justison United States	13	439 1.9×	305 1.8×	43 0.8×	27 0.6×	21 0.5×	45	454
Jing‐Cheng Lin Taiwan	10	308 1.3×	171 1.0×	177 3.5×	102 2.1×	28 0.7×	17	402
B. Eyckens Belgium	6	346 1.5×	112 0.7×	47 0.9×	39 0.8×	58 1.4×	9	384
S. Luce United States	6	259 1.1×	146 0.9×	43 0.8×	40 0.8×	53 1.3×	11	300

Countries citing papers authored by R. Augur

Since Specialization

Citations

This map shows the geographic impact of R. Augur's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. Augur with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. Augur more than expected).

Fields of papers citing papers by R. Augur

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. Augur. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. Augur. The network helps show where R. Augur may publish in the future.

Co-authorship network of co-authors of R. Augur

This figure shows the co-authorship network connecting the top 25 collaborators of R. Augur. A scholar is included among the top collaborators of R. Augur based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. Augur. R. Augur is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

1.

Fox, Robert, Jusang Lee, Ankur Sharma, et al.. (2017). Topographic Complexities and Solutions for High Density BEOL MIM Capacitors. ECS Transactions. 80(4). 233–237. 2 indexed citations

2.

Lu, Jian‐Qiang, Yongchai Kwon, J. J. McMahon, et al.. (2004). Evaluation procedures for wafer bonding and thinning of interconnect test structures for 3D ICs. 74–76. 27 indexed citations

3.

Rasco, Marilyn A., et al.. (2003). Packaging assessment of porous ultra low-k materials. 113–115. 14 indexed citations

4.

Satyanarayana, S.V., et al.. (2003). Via first dual damascene integration of nanoporous ultra low-k material. 48–50. 1 indexed citations

5.

Carpio, Ronald A., et al.. (2003). Voiding in ultra porous low-k materials proposed mechanism, detection and possible solutions. 236–238. 4 indexed citations

6.

Lin, Jason, R. Augur, S.L. Shue, et al.. (2003). CVD barriers for Cu with nanoporous ultra low-k: integration and reliability. 21–23. 3 indexed citations

7.

Foran, Brendan, et al.. (2002). Analysis of copper grains in damascene trenches after rapid thermal processing or furnace anneals. Journal of Electronic Materials. 31(1). 10–15. 18 indexed citations

8.

Wolters, D. R., A.T.A. Zegers-van Duijnhoven, & R. Augur. (2002). Model for 1/f noise in MOSFETs and interconnects. 32. 177–180. 1 indexed citations

9.

Augur, R., et al.. (2002). Mechanism of electromigration failure in submicron Cu interconnects. Journal of Electronic Materials. 31(10). 1004–1008. 14 indexed citations

10.

Augur, R., et al.. (2001). Single and dual damascene integration of a spin-on porous ultra low-k material. 292–294. 6 indexed citations

11.

Kim, Choong-Un, et al.. (2001). Efficient electromigration testing with a single current source. Review of Scientific Instruments. 72(10). 3962–3967. 3 indexed citations

12.

Tsai, Ming-Hsien, R. Augur, V. Blaschke, et al.. (2001). Electromigration reliability of dual damascene Cu/CVD SiOC interconnects. 266–268. 8 indexed citations

13.

Augur, R., et al.. (1998). A new four-level metal interconnect system tailored to an advanced 0.5-μm BiCMOS technology. IEEE Transactions on Semiconductor Manufacturing. 11(4). 624–635. 1 indexed citations

14.

Augur, R., et al.. (1996). Diffusion at the Al/Al oxide interface during electromigration in wide lines. Journal of Applied Physics. 79(6). 3003–3010. 7 indexed citations

15.

Augur, R., et al.. (1995). A1/A1-Oxide Interface Diffusion During Electromigration. MRS Proceedings. 391.

16.

Augur, R., et al.. (1995). Stress voiding and electromigration phenomena in aluminum alloys. Applied Surface Science. 91(1-4). 197–207. 9 indexed citations

17.

Dirks, A.G. & R. Augur. (1994). Reliability and microstructure of Al-Si-V-Pd alloy films for use in ultralarge scale integration. Applied Physics Letters. 64(6). 704–706. 12 indexed citations

18.

Augur, R., et al.. (1994). I/F Noise Measurements in Al-Si, Al-Si-V and Al-Si-V-Pd Alloy Films. MRS Proceedings. 338.

19.

Augur, R.. (1994). Interface diffusion during electromigration in Al lines. 266–273. 5 indexed citations

20.

Dirks, A.G., R. Augur, & A.E.M. De Veirman. (1994). AlSiV and AlSiVPd films as alternatives for AlSiCu interconnect: microstructure and its impact on reliability. Thin Solid Films. 246(1-2). 164–171. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact