Toshiyuki Tabata
About
In The Last Decade
Toshiyuki Tabata
59 papers receiving 886 citations
Peers
Comparison fields: 5 of 43
- Electrical and Electronic Engineering 873
- Materials Chemistry 346
- Atomic and Molecular Physics, and Optics 243
- Biomedical Engineering 158
- Electronic, Optical and Magnetic Materials 43
Countries citing papers authored by Toshiyuki Tabata
This map shows the geographic impact of Toshiyuki Tabata's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Toshiyuki Tabata with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Toshiyuki Tabata more than expected).
Fields of papers citing papers by Toshiyuki Tabata
This network shows the impact of papers produced by Toshiyuki Tabata. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Toshiyuki Tabata. The network helps show where Toshiyuki Tabata may publish in the future.
Co-authorship network of co-authors of Toshiyuki Tabata
This figure shows the co-authorship network connecting the top 25 collaborators of Toshiyuki Tabata. A scholar is included among the top collaborators of Toshiyuki Tabata based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Toshiyuki Tabata. Toshiyuki Tabata is excluded from the visualization to improve readability, since they are connected to all nodes in the network.
All Works
| # | Work | Indexed citations |
|---|---|---|
| 1 | 0 | |
| 2 | 0 | |
| 3 | 2 | |
| 4 | 4 | |
| 5 | 3 | |
| 6 | 2 | |
| 7 | 2 | |
| 8 | 4 | |
| 9 | 2 | |
| 10 | 6 | |
| 11 | 4 | |
| 12 | 7 | |
| 13 | 3 | |
| 14 | Reconsideration of Electron Mobility in Ge n-MOSFETs from Ge Substrate Side | 2 |
| 15 | Enhancement of high-N s electron mobility in sub-nm EOT Ge n-MOSFETs | 15 |
| 16 | 1 | |
| 17 | 3 | |
| 18 | 1 | |
| 19 | 92 | |
| 20 | 2 |
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.