Temel Büyüklimanli

794 total citations
37 papers, 625 citations indexed

About

Temel Büyüklimanli is a scholar working on Electrical and Electronic Engineering, Computational Mechanics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Temel Büyüklimanli has authored 37 papers receiving a total of 625 indexed citations (citations by other indexed papers that have themselves been cited), including 31 papers in Electrical and Electronic Engineering, 14 papers in Computational Mechanics and 10 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Temel Büyüklimanli's work include Silicon and Solar Cell Technologies (18 papers), Semiconductor materials and devices (16 papers) and Ion-surface interactions and analysis (14 papers). Temel Büyüklimanli is often cited by papers focused on Silicon and Solar Cell Technologies (18 papers), Semiconductor materials and devices (16 papers) and Ion-surface interactions and analysis (14 papers). Temel Büyüklimanli collaborates with scholars based in United States, Japan and Taiwan. Temel Büyüklimanli's co-authors include James C. Sturm, C. W. Magee, Joseph H. Simmons, Nilgün Özer, Carl M. Lampert, Mark E. Law, S. Wagner, Yaser M. Haddara, Malcolm S. Carroll and L. Lanzerotti and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Temel Büyüklimanli

35 papers receiving 589 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Temel Büyüklimanli United States 15 509 197 156 92 76 37 625
F. Pierre France 11 214 0.4× 183 0.9× 151 1.0× 41 0.4× 62 0.8× 43 412
J. S. Christensen Norway 16 617 1.2× 382 1.9× 293 1.9× 82 0.9× 61 0.8× 45 808
B.J. Garcı́a Spain 11 253 0.5× 152 0.8× 154 1.0× 26 0.3× 103 1.4× 51 368
E. de Frésart United States 15 805 1.6× 295 1.5× 329 2.1× 72 0.8× 128 1.7× 24 924
W. Knaepen Belgium 9 267 0.5× 249 1.3× 126 0.8× 24 0.3× 71 0.9× 19 420
E. Franke Germany 12 200 0.4× 181 0.9× 77 0.5× 46 0.5× 54 0.7× 13 361
Jonathan J. Mallett United States 16 342 0.7× 199 1.0× 226 1.4× 29 0.3× 63 0.8× 33 565
M.N. Séméria France 17 713 1.4× 413 2.1× 188 1.2× 53 0.6× 165 2.2× 38 853
M. Bouslama Algeria 14 251 0.5× 278 1.4× 106 0.7× 41 0.4× 48 0.6× 43 449
Toshihiko Toyama Japan 18 764 1.5× 744 3.8× 80 0.5× 35 0.4× 90 1.2× 62 873

Countries citing papers authored by Temel Büyüklimanli

Since Specialization
Citations

This map shows the geographic impact of Temel Büyüklimanli's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Temel Büyüklimanli with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Temel Büyüklimanli more than expected).

Fields of papers citing papers by Temel Büyüklimanli

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Temel Büyüklimanli. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Temel Büyüklimanli. The network helps show where Temel Büyüklimanli may publish in the future.

Co-authorship network of co-authors of Temel Büyüklimanli

This figure shows the co-authorship network connecting the top 25 collaborators of Temel Büyüklimanli. A scholar is included among the top collaborators of Temel Büyüklimanli based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Temel Büyüklimanli. Temel Büyüklimanli is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Hashimoto, Tadao, et al.. (2023). Resistivity of manganese doped GaN grown by near equilibrium ammonothermal (NEAT) method. Journal of Crystal Growth. 621. 127364–127364. 3 indexed citations
2.
Magee, C. W. & Temel Büyüklimanli. (2023). Secondary ion mass spectrometry quantification: Do you remember when a factor of 2 was good enough?. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 41(3). 2 indexed citations
3.
Borland, John, Tseung‐Yuen Tseng, Abhijeet Joshi, et al.. (2018). Boosting Ge-Epi P-Well Mobility & Crystal Quality with Si or Sn Implantation and Melt Annealing. ECS Transactions. 86(7). 357–372. 3 indexed citations
4.
5.
Yu, Haidong, et al.. (2010). Experimental study of two-step growth of thin AlN film on 4H-SiC substrate by Metalorganic Chemical Vapor Deposition. Journal of Optoelectronics and Advanced Materials. 12(12). 2406–2412. 5 indexed citations
6.
7.
Borland, John, Tsutomu Nagayama, Temel Büyüklimanli, et al.. (2009). 22nm node n+ SiC stressor using deep PAI+C7H7+P4 with laser annealing. 1–8. 1 indexed citations
8.
Magee, C. W., et al.. (2007). SIMS analyses of ultra-low-energy B ion implants in Si: Evaluation of profile shape and dose accuracy. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 261(1-2). 594–599. 16 indexed citations
9.
Kataoka, Yuji, et al.. (2007). Analytical Model for Redistribution Profile of Ion-Implanted Impurities During Solid-Phase Epitaxy. IEEE Transactions on Electron Devices. 54(2). 262–271. 34 indexed citations
10.
Büyüklimanli, Temel, et al.. (2006). Near-surface secondary-ion-mass-spectrometry analyses of plasma-based B ion implants in Si. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 24(1). 408–413. 17 indexed citations
11.
12.
Kimura, Kenji, et al.. (2003). High-resolution depth profiling of ultrashallow boron implants in silicon using high-resolution RBS. Current Applied Physics. 3(1). 9–11. 9 indexed citations
13.
Lanzerotti, L., J. C. Sturm, E.A. Stach, et al.. (2002). Suppression of boron outdiffusion in SiGe HBTs by carbon incorporation. 249–252. 31 indexed citations
14.
Law, Mark E., et al.. (2000). Energy dependence of transient enhanced diffusion and defect kinetics. Applied Physics Letters. 77(1). 112–114. 12 indexed citations
15.
Yang, Min, Malcolm S. Carroll, James C. Sturm, & Temel Büyüklimanli. (2000). Phosphorus Doping and Sharp Profiles in Silicon and Silicon-Germanium Epitaxy by Rapid Thermal Chemical Vapor Deposition. Journal of The Electrochemical Society. 147(9). 3541–3541. 22 indexed citations
16.
Law, Mark E., et al.. (2000). Energy Dependence of Transient Enhanced Diffusion and {311} Defect Kinetics. MRS Proceedings. 610. 1 indexed citations
17.
Bojan, Vincent, Temel Büyüklimanli, & Carlo G. Pantano. (1994). Quantification of SIMS data for multicomponent glasses. Surface and Interface Analysis. 21(2). 87–94. 5 indexed citations
18.
Büyüklimanli, Temel & Joseph H. Simmons. (1991). Surface degradation ofYBa2Cu3O7−δsuperconductors on exposure to air and humidity. Physical review. B, Condensed matter. 44(2). 727–733. 31 indexed citations
19.
Büyüklimanli, Temel & Joseph H. Simmons. (1990). XPS studies of polyhedral linkages in binary fluoride films. Journal of Non-Crystalline Solids. 120(1-3). 262–266. 13 indexed citations
20.
Walck, Scott D., Temel Büyüklimanli, & J. J. Hren. (1986). EXTENDED DEPTH PROFILING WITH THE IAP. Le Journal de Physique Colloques. 47(C2). C2–451. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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