Shujuan Mao

468 total citations
40 papers, 234 citations indexed

About

Shujuan Mao is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Shujuan Mao has authored 40 papers receiving a total of 234 indexed citations (citations by other indexed papers that have themselves been cited), including 37 papers in Electrical and Electronic Engineering, 25 papers in Atomic and Molecular Physics, and Optics and 5 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Shujuan Mao's work include Semiconductor materials and devices (33 papers), Semiconductor materials and interfaces (24 papers) and Advancements in Semiconductor Devices and Circuit Design (12 papers). Shujuan Mao is often cited by papers focused on Semiconductor materials and devices (33 papers), Semiconductor materials and interfaces (24 papers) and Advancements in Semiconductor Devices and Circuit Design (12 papers). Shujuan Mao collaborates with scholars based in China, Belgium and Sweden. Shujuan Mao's co-authors include Jun Luo, Guilei Wang, Chao Zhao, Tianchun Ye, Wenwu Wang, Junfeng Li, Jing Xu, Dapeng Chen, Hangsheng Yang and Henry H. Radamson and has published in prestigious journals such as Journal of Physics D Applied Physics, IEEE Transactions on Electron Devices and Journal of Applied Polymer Science.

In The Last Decade

Shujuan Mao

34 papers receiving 226 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Shujuan Mao China 9 197 109 37 34 29 40 234
Liuhong Ma China 10 257 1.3× 80 0.7× 130 3.5× 12 0.4× 26 0.9× 50 304
Kian-Ming Tan Singapore 11 339 1.7× 135 1.2× 54 1.5× 16 0.5× 81 2.8× 22 362
King-Jien Chui Singapore 9 318 1.6× 88 0.8× 86 2.3× 28 0.8× 59 2.0× 40 354
J. Neil Merrett United States 10 245 1.2× 52 0.5× 36 1.0× 48 1.4× 79 2.7× 29 312
Anyan Du China 8 179 0.9× 59 0.5× 41 1.1× 34 1.0× 70 2.4× 36 213
Jan Hampe Germany 4 146 0.7× 120 1.1× 28 0.8× 16 0.5× 14 0.5× 7 171
Sungjae Lee United States 10 339 1.7× 51 0.5× 50 1.4× 9 0.3× 26 0.9× 30 396
M. Miyajima Japan 11 437 2.2× 77 0.7× 36 1.0× 63 1.9× 17 0.6× 27 458
Christine H. Tsau United States 4 221 1.1× 115 1.1× 98 2.6× 21 0.6× 12 0.4× 8 276
R.G.R. Weemaes Netherlands 6 282 1.4× 50 0.5× 75 2.0× 41 1.2× 98 3.4× 13 312

Countries citing papers authored by Shujuan Mao

Since Specialization
Citations

This map shows the geographic impact of Shujuan Mao's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Shujuan Mao with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Shujuan Mao more than expected).

Fields of papers citing papers by Shujuan Mao

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Shujuan Mao. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Shujuan Mao. The network helps show where Shujuan Mao may publish in the future.

Co-authorship network of co-authors of Shujuan Mao

This figure shows the co-authorship network connecting the top 25 collaborators of Shujuan Mao. A scholar is included among the top collaborators of Shujuan Mao based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Shujuan Mao. Shujuan Mao is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Zhang, Yadong, Xuexiang Zhang, Shujuan Mao, et al.. (2025). High-Performance Two-Tier FinFETs With Low-Temperature (≤ 500 °C) Silicide Dopant Segregation Schottky S-D for M3D Circuits. IEEE Electron Device Letters. 46(5). 693–696.
2.
Yu, Wei, Chang Liu, Di Geng, et al.. (2025). Asymmetric Contact Resistances in IGZO Vertical Channel-All-Around FETs. IEEE Electron Device Letters. 46(11). 2070–2073.
3.
He, Yan‐Ping, Shujuan Mao, Feng Xu, et al.. (2025). Effect of Carbon on the Formation of Cobalt Silicide and Thermal Stability for DRAM Application: A Comparative Study on PVD and CVD Methods. IEEE Transactions on Electron Devices. 72(2). 653–658. 1 indexed citations
4.
Chen, Xu, Jing Xu, Shujuan Mao, et al.. (2024). Role of ultra-thin tungsten interlayer in blocking nitrogen diffusion and reducing specific contact resistivity in titanium/n+-Si ohmic contacts. Journal of Materials Science Materials in Electronics. 35(34). 1 indexed citations
5.
Zhang, Zhaohao, Shujuan Mao, Gaobo Xu, et al.. (2023). An Ultra-Dense One-Transistor Ternary-Content-Addressable Memory Array Based on Non-Volatile and Ambipolar Fin Field-Effect Transistors. IEEE Transactions on Electron Devices. 70(3). 1029–1033. 10 indexed citations
6.
Liu, Jinbiao, Jing Xu, Shujuan Mao, et al.. (2023). Formation of Highly-Activated N-Type Shallow Junction in Germanium Using Nanosecond Laser Annealing and Fluorine Co-Doping. ECS Journal of Solid State Science and Technology. 12(5). 54002–54002. 1 indexed citations
7.
8.
Mao, Shujuan, Guilei Wang, & Chao Zhao. (2023). Amorphous oxide semiconductor for monolithic 3D DRAM: an enabler or passer-by?. National Science Review. 11(3). nwad290–nwad290. 5 indexed citations
9.
Mao, Shujuan, Jianfeng Gao, Xiaobin He, et al.. (2022). Low-Temperature (≤500 °C) Complementary Schottky Source/Drain FinFETs for 3D Sequential Integration. Nanomaterials. 12(7). 1218–1218. 2 indexed citations
10.
Zhang, Qingzhu, Jie Gu, Lei Cao, et al.. (2021). Optimization of Structure and Electrical Characteristics for Four-Layer Vertically-Stacked Horizontal Gate-All-Around Si Nanosheets Devices. Nanomaterials. 11(3). 646–646. 48 indexed citations
11.
Du, Anyan, Chao Zhao, Jianfeng Gao, et al.. (2020). Investigation of Barrier Property of Amorphous Co–Ti Layer as Single Barrier/Liner in Local Co Interconnects. IEEE Transactions on Electron Devices. 67(5). 2076–2081. 7 indexed citations
12.
Xu, Jing, Guilei Wang, Shujuan Mao, et al.. (2020). Role of Carbon Pre-Germanidation Implantation on Enhancing the Thermal Stability of NiGe Films Below 10 nm Thickness. ECS Journal of Solid State Science and Technology. 9(5). 54006–54006. 4 indexed citations
13.
Mao, Shujuan, Chao Zhao, Jin‐Biao Liu, et al.. (2020). Investigation of Ultrathin Ni Germanosilicide for Advanced pMOS Contact Metallization. IEEE Transactions on Electron Devices. 67(11). 5039–5044. 3 indexed citations
14.
Sheng, Jie, Chao Zhao, Jing Xu, et al.. (2020). Effects of Ni Film Thickness on the Properties of Ni-Based Silicides Formed on Both Highly Doped n- and p-Si Substrate. ECS Journal of Solid State Science and Technology. 9(3). 34001–34001. 2 indexed citations
15.
Xu, Jing, Jianfeng Gao, Anyan Du, et al.. (2020). Impact of Ge pre-amorphization implantation on Co/Co-Ti/n + -Si contacts in advanced Co interconnects. Japanese Journal of Applied Physics. 59(SL). SLLB01–SLLB01. 4 indexed citations
16.
Mao, Shujuan, Guilei Wang, Jing Xu, et al.. (2019). Exploration of the impact of interface states density on the specific contact resistivity in TiSi x /n + -Si Ohmic contacts through high-low frequency method. Japanese Journal of Applied Physics. 58(SH). SHHD01–SHHD01. 1 indexed citations
17.
Mao, Shujuan & Jun Luo. (2019). Titanium-based ohmic contacts in advanced CMOS technology. Journal of Physics D Applied Physics. 52(50). 503001–503001. 29 indexed citations
18.
Wang, Guilei, Jing Xu, Shujuan Mao, et al.. (2018). Enhancing the thermal stability of NiGe by prior-germanidation fluorine implantation into Ge substrate. Japanese Journal of Applied Physics. 57(7S2). 07MA03–07MA03. 3 indexed citations
19.
Mao, Shujuan, Jing Xu, Guilei Wang, et al.. (2017). On the Manifestation of Ge Pre-Amorphization Implantation (PAI) in Forming Ultrathin TiSixfor Ti Direct Contact on Si in Sub-16/14 nm Complementary Metal-Oxide-Semiconductor (CMOS) Technology Nodes. ECS Journal of Solid State Science and Technology. 6(9). P660–P664. 10 indexed citations
20.
Liu, Y., et al.. (2015). Modulation of magnetization direction in flexible multiferroic heterostructures towards flexible spintronics. 2015 IEEE Magnetics Conference (INTERMAG). 1–1.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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