O. W. Holland

5.8k total citations · 1 hit paper
172 papers, 4.8k citations indexed

About

O. W. Holland is a scholar working on Electrical and Electronic Engineering, Computational Mechanics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, O. W. Holland has authored 172 papers receiving a total of 4.8k indexed citations (citations by other indexed papers that have themselves been cited), including 151 papers in Electrical and Electronic Engineering, 83 papers in Computational Mechanics and 49 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in O. W. Holland's work include Silicon and Solar Cell Technologies (110 papers), Ion-surface interactions and analysis (80 papers) and Integrated Circuits and Semiconductor Failure Analysis (65 papers). O. W. Holland is often cited by papers focused on Silicon and Solar Cell Technologies (110 papers), Ion-surface interactions and analysis (80 papers) and Integrated Circuits and Semiconductor Failure Analysis (65 papers). O. W. Holland collaborates with scholars based in United States, Australia and Israel. O. W. Holland's co-authors include J. Narayan, D. Fathy, C. W. White, B. R. Appleton, T. E. Haynes, Mulpuri V. Rao, Chendong Jin, A. Kvit, John F. Muth and A. K. Sharma and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and The Journal of Physical Chemistry B.

In The Last Decade

O. W. Holland

167 papers receiving 4.5k citations

Hit Papers

1 papers align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide

2001 538 citations O. W. Holland et al. profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
O. W. Holland United States	36	3.9k	1.6k	1.6k	1.1k	486	172	4.8k
B. G. Svensson Sweden	39	4.3k 1.1×	1.3k 0.8×	1.1k 0.7×	1.2k 1.1×	344 0.7×	294	4.9k
W. Wesch Germany	33	3.2k 0.8×	2.0k 1.2×	2.1k 1.3×	921 0.8×	294 0.6×	251	4.6k
J. Stoëmenos Greece	30	2.7k 0.7×	1.5k 0.9×	389 0.2×	537 0.5×	306 0.6×	191	3.2k
J. Gyulai Hungary	26	1.5k 0.4×	1.3k 0.8×	974 0.6×	919 0.8×	147 0.3×	206	2.9k
T. E. Haynes United States	34	2.9k 0.7×	1.0k 0.6×	894 0.6×	1.1k 1.0×	486 1.0×	116	3.6k
R. Grötzschel Germany	27	1.2k 0.3×	1.3k 0.8×	705 0.4×	489 0.4×	276 0.6×	148	2.3k
W. Beyer Germany	39	4.2k 1.1×	3.9k 2.4×	315 0.2×	582 0.5×	278 0.6×	227	5.1k
H. Bracht Germany	37	3.4k 0.9×	1.8k 1.1×	507 0.3×	2.6k 2.3×	123 0.3×	171	4.4k
R. Gwilliam United Kingdom	25	2.4k 0.6×	1.6k 1.0×	452 0.3×	1.4k 1.2×	301 0.6×	323	3.4k
W. Jäger Germany	31	1.3k 0.3×	1.6k 1.0×	627 0.4×	1.1k 0.9×	151 0.3×	150	2.9k

Countries citing papers authored by O. W. Holland

Since Specialization

Citations

This map shows the geographic impact of O. W. Holland's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by O. W. Holland with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites O. W. Holland more than expected).

Fields of papers citing papers by O. W. Holland

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by O. W. Holland. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by O. W. Holland. The network helps show where O. W. Holland may publish in the future.

Co-authorship network of co-authors of O. W. Holland

This figure shows the co-authorship network connecting the top 25 collaborators of O. W. Holland. A scholar is included among the top collaborators of O. W. Holland based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with O. W. Holland. O. W. Holland is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Anand, Aman, et al.. (2005). Select gas absorption in carbon nanotubes loading a resonant cavity to sense airborne toxin gases. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 241(1-4). 511–516. 17 indexed citations

Hossain, Khalid, et al.. (2005). Rate enhancement during thermal oxidation of Ge+-implanted silicon. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 241(1-4). 553–558. 6 indexed citations

Holland, O. W.. (2004). The unique role of ion beam analysis in modeling the thermal evolution of hydrogen in Si implanted at doses required for ion cutting. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 219-220. 788–791. 3 indexed citations

Jones, Keith, Michael A. Derenge, Pankaj B. Shah, et al.. (2002). A comparison of graphite and AlN caps used for annealing ion-implanted SiC. Journal of Electronic Materials. 31(6). 568–575. 9 indexed citations

Gregory, R. B., et al.. (1999). The Effects of Damage on Hydrogen-Implant-Induced Thin-Film Separation from Bulk Silicon Carbide. MRS Proceedings. 572. 3 indexed citations

Rao, Mulpuri V., et al.. (1997). Nitrogen and aluminum implantation in high resistivity silicon carbide. Journal of Applied Physics. 82(11). 5327–5333. 31 indexed citations

Holland, O. W., et al.. (1997). Methods of defect-engineering shallow junctions formed by B+-implantation in Si. Journal of Electronic Materials. 26(11). 1349–1354. 24 indexed citations

Rao, Mulpuri V., Peter R. Griffiths, O. W. Holland, et al.. (1996). Al, Al/C and Al/Si implantations in 6H-SiC. Journal of Electronic Materials. 25(1). 75–80. 33 indexed citations

Rao, Mulpuri V., et al.. (1993). MeV energy Fe and Co implants to obtain buried high resistance layers and to compensate donor implant tails in InP. Journal of Applied Physics. 73(3). 1126–1132. 20 indexed citations

10.

Haynes, T. E. & O. W. Holland. (1993). Lattice damage in ion implanted silicon-germanium alloys. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 80-81. 901–905. 10 indexed citations

11.

Holland, O. W. & T. E. Haynes. (1992). Damage saturation during high-energy ion implantation of Si1−xGex. Applied Physics Letters. 61(26). 3148–3150. 8 indexed citations

12.

Motooka, Teruaki & O. W. Holland. (1992). Amorphization processes in ion implanted Si: Ion species effects. Applied Physics Letters. 61(25). 3005–3007. 57 indexed citations

13.

Holland, O. W., et al.. (1991). Rutherford backscattering studies on high-energy Si-implanted InP. Journal of Electronic Materials. 20(10). 615–619. 13 indexed citations

14.

Holland, O. W., et al.. (1989). Damage Growth in Si During Self-Ion Irradiation: a Study of Ion Effects Over an Extended Energy Range. MRS Proceedings. 147. 4 indexed citations

15.

Sjoreen, T. P., et al.. (1988). Damage Formation in Semiconductors During Mev Ion Implantation. MRS Proceedings. 128. 5 indexed citations

16.

Pennycook, Stephen J., J. Narayan, & O. W. Holland. (1985). Transient‐Enhanced Diffusion during Furnace and Rapid Thermal Annealing of Ion‐Implanted Silicon. Journal of The Electrochemical Society. 132(8). 1962–1968. 30 indexed citations

17.

Fathy, D., O. W. Holland, & J. Narayan. (1985). Formation of ion beam mixed silicides on Si (100) at elevated substrate temperatures. Journal of Applied Physics. 58(1). 297–301. 6 indexed citations

18.

Narayan, J., D. Fathy, O.S. Oen, & O. W. Holland. (1984). High-resolution imaging of ion-implantation damage and mechanism of amortization in semiconductors. Materials Letters. 2(3). 211–218. 33 indexed citations

19.

Lawson, E.M., et al.. (1983). Anomalous near-surface effects in room temperature implanted germanium. Nuclear Instruments and Methods in Physics Research. 209-210. 303–307. 11 indexed citations

20.

Narayan, J., O. W. Holland, & B. R. Appleton. (1983). Solid-phase-epitaxial growth and formation of metastable alloys in ion implanted silicon. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 1(4). 871–887. 90 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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