I.D. Hawkins

983 total citations
50 papers, 780 citations indexed

About

I.D. Hawkins is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, I.D. Hawkins has authored 50 papers receiving a total of 780 indexed citations (citations by other indexed papers that have themselves been cited), including 41 papers in Electrical and Electronic Engineering, 31 papers in Atomic and Molecular Physics, and Optics and 10 papers in Materials Chemistry. Recurrent topics in I.D. Hawkins's work include Silicon and Solar Cell Technologies (30 papers), Semiconductor materials and interfaces (22 papers) and Semiconductor materials and devices (16 papers). I.D. Hawkins is often cited by papers focused on Silicon and Solar Cell Technologies (30 papers), Semiconductor materials and interfaces (22 papers) and Semiconductor materials and devices (16 papers). I.D. Hawkins collaborates with scholars based in United Kingdom, Poland and Belarus. I.D. Hawkins's co-authors include А. R. Peaker, L. Dobaczewski, В. П. Маркевич, P. Kaczor, V. V. Litvinov, Л. И. Мурин, V. V. Emtsev, K. V. Emtsev, J.H. Evans–Freeman and Л.И. Мурин and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Physical Review B.

In The Last Decade

I.D. Hawkins

47 papers receiving 743 citations

Peers

I.D. Hawkins

EEE

AMPO

Ailun Yi China

L. Forbes United States

N.G. Nilsson Sweden

S. Ingrey Canada

C.P. Hains United States

Hiroaki Furuse Japan

J. P. Stagg United Kingdom

Otto Leistiko Denmark

T. Hopf Australia

J. Allam United Kingdom

Ailun Yi China

I.D. Hawkins

563 ×0.8

EEE

401 ×1.0

AMPO

276 ×1.4

51 ×0.6

110 ×3.0

Citations per year, relative to I.D. Hawkins I.D. Hawkins (= 1×) peers Ailun Yi

Countries citing papers authored by I.D. Hawkins

Since Specialization

Citations

This map shows the geographic impact of I.D. Hawkins's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by I.D. Hawkins with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites I.D. Hawkins more than expected).

Fields of papers citing papers by I.D. Hawkins

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by I.D. Hawkins. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by I.D. Hawkins. The network helps show where I.D. Hawkins may publish in the future.

Co-authorship network of co-authors of I.D. Hawkins

This figure shows the co-authorship network connecting the top 25 collaborators of I.D. Hawkins. A scholar is included among the top collaborators of I.D. Hawkins based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with I.D. Hawkins. I.D. Hawkins is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Lord, Andrew, Robert I. Woodward, Hideaki Sato, et al.. (2023). London Quantum-Secured Metro Network. W4K.4–W4K.4. 4 indexed citations

Маркевич, В. П., J. Coutinho, N. V. Abrosimov, et al.. (2023). Interactions of hydrogen atoms with boron and gallium in silicon crystals co-doped with phosphorus and acceptors. Solar Energy Materials and Solar Cells. 259. 112447–112447. 5 indexed citations

Маркевич, В. П., I.D. Hawkins, J. Coutinho, et al.. (2021). Acceptor-oxygen defects in silicon: The electronic properties of centers formed by boron, gallium, indium, and aluminum interactions with the oxygen dimer. Journal of Applied Physics. 130(24). 6 indexed citations

Hammersley, Simon, В. П. Маркевич, I.D. Hawkins, et al.. (2021). GaN surface sputter damage investigated using deep level transient spectroscopy. Materials Science in Semiconductor Processing. 126. 105654–105654. 2 indexed citations

Маркевич, В. П., I.D. Hawkins, Hussein M. Ayedh, et al.. (2021). Indium‐Doped Silicon for Solar Cells—Light‐Induced Degradation and Deep‐Level Traps. physica status solidi (a). 218(23). 2 indexed citations

Маркевич, В. П., Simon Hammersley, I.D. Hawkins, et al.. (2020). Minority carrier traps in Czochralski-grown p-type silicon crystals doped with B, Al, Ga, or In impurity atoms. Research Explorer (The University of Manchester). 258?263. 1013–1018. 1 indexed citations

Маркевич, В. П., et al.. (2020). Defects Reactions Responsible for Boron-Oxygen Degradation in Crystalline Silicon Photovoltaics. Research Explorer (The University of Manchester). 2 indexed citations

Маркевич, В. П., J. Coutinho, Iain F. Crowe, et al.. (2019). Identification of the mechanism responsible for the boron oxygen light induced degradation in silicon photovoltaic cells. Journal of Applied Physics. 125(18). 36 indexed citations

Peaker, А. R., et al.. (2011). Laplace deep level transient spectroscopy: Embodiment and evolution. Physica B Condensed Matter. 407(15). 3026–3030. 14 indexed citations

10.

Dobaczewski, L., В. П. Маркевич, P. Kruszewski, I.D. Hawkins, & А. R. Peaker. (2009). Energy state distributions at oxide–semiconductor interfaces investigated by Laplace DLTS. Physica B Condensed Matter. 404(23-24). 4604–4607. 1 indexed citations

11.

Dobaczewski, L., S. Bernardini, P. Kruszewski, et al.. (2008). Energy state distributions of the Pb centers at the (100), (110), and (111) Si∕SiO2 interfaces investigated by Laplace deep level transient spectroscopy. Applied Physics Letters. 92(24). 22 indexed citations

12.

Peaker, А. R., В. П. Маркевич, B. Hamilton, et al.. (2008). Implantation defects and n-type doping in Ge and Ge rich SiGe. Thin Solid Films. 517(1). 152–154. 16 indexed citations

13.

Liu, Hongxia, Yue Hao, I.D. Hawkins, & А. R. Peaker. (2005). Hot-carrier degradation characteristics and explanation in 0.25 μm PMOSFETs. Chinese Physics. 14(8). 1644–1648. 12 indexed citations

14.

Peaker, А. R., I.D. Hawkins, Matthew P. Halsall, et al.. (2003). Hole trapping in self-assembled SiGe quantum nanostructures. Materials Science and Engineering B. 101(1-3). 338–344. 4 indexed citations

15.

Маркевич, В. П., Ole Andersen, J.H. Evans–Freeman, et al.. (2001). Defect reactions associated with the dissociation of the phosphorus–vacancy pair in silicon. Physica B Condensed Matter. 308-310. 513–516. 9 indexed citations

16.

Peaker, А. R., J.H. Evans–Freeman, I.D. Hawkins, et al.. (2000). Vacancy-related defects in ion implanted and electron irradiated silicon. Materials Science and Engineering B. 71(1-3). 143–147. 7 indexed citations

17.

Rubaldo, Laurent, I.D. Hawkins, Jonathan G. Terry, et al.. (1999). Gold–hydrogen complexes in silicon. Materials Science and Engineering B. 58(1-2). 126–129. 15 indexed citations

18.

Žďánský, K. & I.D. Hawkins. (1999). Slow decay of photoconductivity caused by tin-related DX centers in AlGaAs. Czechoslovak Journal of Physics. 49(5). 813–821. 2 indexed citations

19.

Dobaczewski, L., I.D. Hawkins, & А. R. Peaker. (1995). Laplace transform deep level transient spectroscopy: new insight into defect microscopy. Materials Science and Technology. 11(10). 1071–1073. 2 indexed citations

20.

Hawkins, I.D. & А. R. Peaker. (1986). Capacitance and conductance deep level transient spectroscopy in field-effect transistors. Applied Physics Letters. 48(3). 227–229. 29 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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