M. J. Kappers

1.4k total citations
57 papers, 1.2k citations indexed

About

M. J. Kappers is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Mechanics of Materials. According to data from OpenAlex, M. J. Kappers has authored 57 papers receiving a total of 1.2k indexed citations (citations by other indexed papers that have themselves been cited), including 46 papers in Condensed Matter Physics, 31 papers in Electrical and Electronic Engineering and 20 papers in Mechanics of Materials. Recurrent topics in M. J. Kappers's work include GaN-based semiconductor devices and materials (46 papers), Semiconductor materials and devices (28 papers) and Metal and Thin Film Mechanics (20 papers). M. J. Kappers is often cited by papers focused on GaN-based semiconductor devices and materials (46 papers), Semiconductor materials and devices (28 papers) and Metal and Thin Film Mechanics (20 papers). M. J. Kappers collaborates with scholars based in United Kingdom, Netherlands and United States. M. J. Kappers's co-authors include C. J. Humphreys, J.H. van der Maas, Carol Johnston, M. A. Moram, J. L. Hollander, Rachel A. Oliver, C. McAleese, Joy Sumner, D.C. Koningsberger and Jeffrey T. Miller and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

M. J. Kappers

56 papers receiving 1.2k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
M. J. Kappers United Kingdom 20 811 647 361 358 283 57 1.2k
Abderrezak Belabbes Germany 22 519 0.6× 950 1.5× 685 1.9× 408 1.1× 816 2.9× 42 1.8k
T. Petrişor Romania 21 611 0.8× 688 1.1× 245 0.7× 338 0.9× 158 0.6× 105 1.2k
A. Cros Spain 23 865 1.1× 911 1.4× 469 1.3× 560 1.6× 396 1.4× 106 1.6k
T. Kawashima Japan 20 872 1.1× 405 0.6× 233 0.6× 682 1.9× 164 0.6× 77 1.2k
S. Rushworth United Kingdom 21 299 0.4× 775 1.2× 1.1k 2.9× 271 0.8× 436 1.5× 123 1.5k
Wataru Yamaguchi Japan 16 231 0.3× 424 0.7× 139 0.4× 367 1.0× 256 0.9× 61 800
M. C. Wood United States 18 339 0.4× 413 0.6× 577 1.6× 185 0.5× 222 0.8× 45 1.2k
Akira Yoshihara Japan 13 175 0.2× 621 1.0× 150 0.4× 264 0.7× 272 1.0× 82 975
Stuart Brinkley United States 13 372 0.5× 1.1k 1.8× 712 2.0× 216 0.6× 240 0.8× 18 1.4k
S. Ricart Spain 16 873 1.1× 639 1.0× 194 0.5× 324 0.9× 167 0.6× 36 1.2k

Countries citing papers authored by M. J. Kappers

Since Specialization
Citations

This map shows the geographic impact of M. J. Kappers's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. J. Kappers with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. J. Kappers more than expected).

Fields of papers citing papers by M. J. Kappers

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. J. Kappers. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. J. Kappers. The network helps show where M. J. Kappers may publish in the future.

Co-authorship network of co-authors of M. J. Kappers

This figure shows the co-authorship network connecting the top 25 collaborators of M. J. Kappers. A scholar is included among the top collaborators of M. J. Kappers based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. J. Kappers. M. J. Kappers is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Kappers, M. J., Matthew P. Halsall, Patrick Parkinson, et al.. (2024). Efficiency droop in zincblende InGaN/GaN quantum wells. Nanoscale. 16(29). 13953–13961. 2 indexed citations
2.
Cameron, Douglas, K.P. O’Donnell, P. R. Edwards, et al.. (2020). Acceptor state anchoring in gallium nitride. Applied Physics Letters. 116(10). 2 indexed citations
3.
Humphreys, C. J., James T. Griffiths, Fengzai Tang, et al.. (2017). The atomic structure of polar and non-polar InGaN quantum wells and the green gap problem. Ultramicroscopy. 176. 93–98. 24 indexed citations
4.
Davies, Michael J., P. Dawson, Simon Hammersley, et al.. (2016). Comparative studies of efficiency droop in polar and non-polar InGaN quantum wells. Applied Physics Letters. 108(25). 20 indexed citations
5.
Spencer, Ben F., P.W. Mitchell, P. Dawson, et al.. (2016). Dielectric response of wurtzite gallium nitride in the terahertz frequency range. Solid State Communications. 247. 68–71. 27 indexed citations
6.
Zhu, Tongtong, et al.. (2015). Terahertz electromodulation spectroscopy of electron transport in GaN. Applied Physics Letters. 106(9). 5 indexed citations
7.
Griffiths, James T., Tongtong Zhu, Fabrice Oehler, et al.. (2014). Growth of non-polar (11-20) InGaN quantum dots by metal organic vapour phase epitaxy using a two temperature method. APL Materials. 2(12). 16 indexed citations
8.
Oehler, Fabrice, Duncan S. Sutherland, Tongtong Zhu, et al.. (2014). Evaluation of growth methods for the heteroepitaxy of non-polar(112¯0)GAN on sapphire by MOVPE. Journal of Crystal Growth. 408. 32–41. 11 indexed citations
9.
Liu, Lei, C. McAleese, D.V. Sridhara Rao, M. J. Kappers, & C. J. Humphreys. (2012). Electron holography of an in‐situ biased GaN‐based LED. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 9(3-4). 704–707. 7 indexed citations
10.
Oliver, Rachel A., et al.. (2010). Scanning capacitance microscopy studies of GaN grown by epitaxial layer overgrowth. Journal of Physics Conference Series. 209. 12049–12049. 1 indexed citations
11.
Barnard, J. S., et al.. (2010). The role of rough surfaces in quantitative ADF imaging of gallium nitride-based materials. Journal of Physics Conference Series. 209. 12019–12019. 1 indexed citations
12.
Акимов, А. В., A. J. Kent, B. A. Glavin, et al.. (2009). Coherent terahertz acoustic vibrations in polar and semipolar gallium nitride-based superlattices. Applied Physics Letters. 94(1). 10 indexed citations
13.
Johnston, Carol, M. A. Moram, M. J. Kappers, & C. J. Humphreys. (2009). Defect reduction in (112¯2) semipolar GaN grown on m-plane sapphire using ScN interlayers. Applied Physics Letters. 94(16). 50 indexed citations
14.
Sumner, Joy, Rachel A. Oliver, M. J. Kappers, & C. J. Humphreys. (2009). Scanning capacitance microscopy studies of unintentional doping in epitaxial lateral overgrowth GaN. Journal of Applied Physics. 106(10). 16 indexed citations
15.
Galtrey, M. J., Rachel A. Oliver, M. J. Kappers, et al.. (2008). Atom probe reveals the structure of InxGa1–xN based quantum wells in three dimensions. physica status solidi (b). 245(5). 861–867. 11 indexed citations
16.
Oliver, Rachel A., et al.. (2006). Compositional contrast in AlxGa1−xN/GaN heterostructures using scanning spreading resistance microscopy. Applied Surface Science. 253(8). 3937–3944. 7 indexed citations
17.
Karouta, F., et al.. (2005). Enhancement of p-GaN Conductivity Using PECVD SiO[sub x]. Electrochemical and Solid-State Letters. 8(7). G170–G170. 5 indexed citations
18.
Yan, Junjie, M. J. Kappers, Z. H. Barber, & C. J. Humphreys. (2004). Effects of oxygen plasma treatments on the formation of ohmic contacts to GaN. Applied Surface Science. 234(1-4). 328–332. 25 indexed citations
19.
Graham, D. M., P. Dawson, M. J. Godfrey, et al.. (2003). Exciton localization in InGaN/GaN single quantum well structures. physica status solidi (b). 240(2). 344–347. 15 indexed citations
20.
Kappers, M. J., Jeffrey T. Miller, & D.C. Koningsberger. (1996). Deconvolution and Curve Fitting of IR Spectra for CO Adsorbed on Pt/K-LTL:  Potassium Promoter Effect and Adsorption Site Distribution. The Journal of Physical Chemistry. 100(8). 3227–3236. 46 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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