M. J. Kappers

1.4k total citations
57 papers, 1.2k citations indexed

About

M. J. Kappers is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Mechanics of Materials. According to data from OpenAlex, M. J. Kappers has authored 57 papers receiving a total of 1.2k indexed citations (citations by other indexed papers that have themselves been cited), including 46 papers in Condensed Matter Physics, 31 papers in Electrical and Electronic Engineering and 20 papers in Mechanics of Materials. Recurrent topics in M. J. Kappers's work include GaN-based semiconductor devices and materials (46 papers), Semiconductor materials and devices (28 papers) and Metal and Thin Film Mechanics (20 papers). M. J. Kappers is often cited by papers focused on GaN-based semiconductor devices and materials (46 papers), Semiconductor materials and devices (28 papers) and Metal and Thin Film Mechanics (20 papers). M. J. Kappers collaborates with scholars based in United Kingdom, Netherlands and United States. M. J. Kappers's co-authors include C. J. Humphreys, J.H. van der Maas, Carol Johnston, M. A. Moram, J. L. Hollander, Rachel A. Oliver, C. McAleese, Joy Sumner, D.C. Koningsberger and Jeffrey T. Miller and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

M. J. Kappers

56 papers receiving 1.2k citations

Peers

Countries citing papers authored by M. J. Kappers

Since Specialization

Citations

This map shows the geographic impact of M. J. Kappers's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. J. Kappers with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. J. Kappers more than expected).

Fields of papers citing papers by M. J. Kappers

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. J. Kappers. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. J. Kappers. The network helps show where M. J. Kappers may publish in the future.

Co-authorship network of co-authors of M. J. Kappers

This figure shows the co-authorship network connecting the top 25 collaborators of M. J. Kappers. A scholar is included among the top collaborators of M. J. Kappers based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. J. Kappers. M. J. Kappers is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Efficiency droop in zincblende InGaN/GaN quantum wells 2024 ·Nanoscale ·(unknown), (unknown), (unknown), M. J. Kappers, Matthew P. Halsall, Patrick Parkinson, D. J. Wallis, Rachel A. Oliver, David J. Binks	2
2	Acceptor state anchoring in gallium nitride 2020 ·Applied Physics Letters ·Douglas Cameron, K.P. O’Donnell, P. R. Edwards, M. Peres, K. Lorenz, M. J. Kappers, Michał Boćkowski	2
3	The atomic structure of polar and non-polar InGaN quantum wells and the green gap problem 2017 ·Ultramicroscopy ·C. J. Humphreys, James T. Griffiths, Fengzai Tang, Fabrice Oehler, Scott D. Findlay, Changxi Zheng, Joanne Etheridge, T. Martin, Paul A.J. Bagot, Michael P. Moody, Duncan S. Sutherland, P. Dawson, Stefan Schulz, Siyuan Zhang, Wai Yuen Fu, Tongtong Zhu, M. J. Kappers, Rachel A. Oliver	24
4	Comparative studies of efficiency droop in polar and non-polar InGaN quantum wells 2016 ·Applied Physics Letters ·Michael J. Davies, P. Dawson, Simon Hammersley, Tongtong Zhu, M. J. Kappers, C. J. Humphreys, Rachel A. Oliver	20
5	Dielectric response of wurtzite gallium nitride in the terahertz frequency range 2016 ·Solid State Communications ·(unknown), (unknown), Ben F. Spencer, P.W. Mitchell, P. Dawson, M. J. Kappers, Rachel A. Oliver, C. J. Humphreys, D. M. Graham	27
6	Terahertz electromodulation spectroscopy of electron transport in GaN 2015 ·Applied Physics Letters ·(unknown), (unknown), Tongtong Zhu, M. J. Kappers, R. Kersting	5
7	Growth of non-polar (11-20) InGaN quantum dots by metal organic vapour phase epitaxy using a two temperature method 2014 ·APL Materials ·James T. Griffiths, Tongtong Zhu, Fabrice Oehler, (unknown), Wai Yuen Fu, (unknown), Robert A. Taylor, M. J. Kappers, C. J. Humphreys, Rachel A. Oliver	16
8	Evaluation of growth methods for the heteroepitaxy of non-polar(112¯0)GAN on sapphire by MOVPE 2014 ·Journal of Crystal Growth ·Fabrice Oehler, Duncan S. Sutherland, Tongtong Zhu, (unknown), T. J. Badcock, M. J. Kappers, C. J. Humphreys, P. Dawson, Rachel A. Oliver	11
9	Electron holography of an in‐situ biased GaN‐based LED 2012 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Lei Liu, C. McAleese, D.V. Sridhara Rao, M. J. Kappers, C. J. Humphreys	7
10	Scanning capacitance microscopy studies of GaN grown by epitaxial layer overgrowth 2010 ·Journal of Physics Conference Series ·Rachel A. Oliver, (unknown), Joy Sumner, M. J. Kappers, C. J. Humphreys	1
11	The role of rough surfaces in quantitative ADF imaging of gallium nitride-based materials 2010 ·Journal of Physics Conference Series ·J. S. Barnard, (unknown), Rachel A. Oliver, M. J. Kappers, C. J. Humphreys	1
12	Coherent terahertz acoustic vibrations in polar and semipolar gallium nitride-based superlattices 2009 ·Applied Physics Letters ·(unknown), А. В. Акимов, A. J. Kent, B. A. Glavin, M. J. Kappers, J. L. Hollander, M. A. Moram, C. J. Humphreys	10
13	Defect reduction in (112¯2) semipolar GaN grown on m-plane sapphire using ScN interlayers 2009 ·Applied Physics Letters ·Carol Johnston, M. A. Moram, M. J. Kappers, C. J. Humphreys	50
14	Scanning capacitance microscopy studies of unintentional doping in epitaxial lateral overgrowth GaN 2009 ·Journal of Applied Physics ·Joy Sumner, Rachel A. Oliver, M. J. Kappers, C. J. Humphreys	16
15	Atom probe reveals the structure of In_xGa_1–xN based quantum wells in three dimensions 2008 ·physica status solidi (b) ·M. J. Galtrey, Rachel A. Oliver, M. J. Kappers, C. McAleese, Dandan Zhu, C. J. Humphreys, P. H. Clifton, David M. Larsen, A. Cerezo	11
16	Compositional contrast in AlxGa1−xN/GaN heterostructures using scanning spreading resistance microscopy 2006 ·Applied Surface Science ·(unknown), Rachel A. Oliver, Joy Sumner, C. McAleese, M. J. Kappers, C. J. Humphreys	7
17	Enhancement of p-GaN Conductivity Using PECVD SiO[sub x] 2005 ·Electrochemical and Solid-State Letters ·F. Karouta, M. J. Kappers, (unknown), B. Jacobs	5
18	Effects of oxygen plasma treatments on the formation of ohmic contacts to GaN 2004 ·Applied Surface Science ·Junjie Yan, M. J. Kappers, Z. H. Barber, C. J. Humphreys	25
19	Exciton localization in InGaN/GaN single quantum well structures 2003 ·physica status solidi (b) ·D. M. Graham, (unknown), P. Dawson, M. J. Godfrey, M. J. Kappers, T. M. Smeeton, J. S. Barnard, C. J. Humphreys, E. J. Thrush	15
20	Deconvolution and Curve Fitting of IR Spectra for CO Adsorbed on Pt/K-LTL: Potassium Promoter Effect and Adsorption Site Distribution 1996 ·The Journal of Physical Chemistry ·M. J. Kappers, Jeffrey T. Miller, D.C. Koningsberger	46

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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