А. R. Peaker

5.1k total citations
279 papers, 4.0k citations indexed

About

А. R. Peaker is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, А. R. Peaker has authored 279 papers receiving a total of 4.0k indexed citations (citations by other indexed papers that have themselves been cited), including 249 papers in Electrical and Electronic Engineering, 155 papers in Atomic and Molecular Physics, and Optics and 82 papers in Materials Chemistry. Recurrent topics in А. R. Peaker's work include Silicon and Solar Cell Technologies (161 papers), Semiconductor materials and interfaces (119 papers) and Semiconductor materials and devices (115 papers). А. R. Peaker is often cited by papers focused on Silicon and Solar Cell Technologies (161 papers), Semiconductor materials and interfaces (119 papers) and Semiconductor materials and devices (115 papers). А. R. Peaker collaborates with scholars based in United Kingdom, Belarus and Poland. А. R. Peaker's co-authors include В. П. Маркевич, L. Dobaczewski, B. Hamilton, I.D. Hawkins, K. Bonde Nielsen, Л. И. Мурин, J. Coutinho, M. Missous, P. Kaczor and V. V. Litvinov and has published in prestigious journals such as Nature, Physical Review Letters and Physical review. B, Condensed matter.

In The Last Decade

А. R. Peaker

273 papers receiving 3.9k citations

Peers

Countries citing papers authored by А. R. Peaker

Since Specialization

Citations

This map shows the geographic impact of А. R. Peaker's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by А. R. Peaker with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites А. R. Peaker more than expected).

Fields of papers citing papers by А. R. Peaker

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by А. R. Peaker. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by А. R. Peaker. The network helps show where А. R. Peaker may publish in the future.

Co-authorship network of co-authors of А. R. Peaker

This figure shows the co-authorship network connecting the top 25 collaborators of А. R. Peaker. A scholar is included among the top collaborators of А. R. Peaker based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with А. R. Peaker. А. R. Peaker is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Hydrogen Reactions with Dopants and Impurities in Solar Silicon from First Principles 2023 ·Solar RRL ·J. Coutinho, (unknown), V. J. B. Torres, (unknown), В. П. Маркевич, А. R. Peaker	3
2	Theory of reactions between hydrogen and group-III acceptors in silicon 2023 ·Physical review. B. ·J. Coutinho, (unknown), V. J. B. Torres, (unknown), В. П. Маркевич, А. R. Peaker	6
3	Deep-level defects in Ga-doped silicon crystals 2023 ·AIP conference proceedings ·(unknown), В. П. Маркевич, (unknown), J. Coutinho, N. V. Abrosimov, (unknown), Iain F. Crowe, Matthew P. Halsall, А. R. Peaker	1
4	Carrier lifetimes in high-lifetime silicon wafers and solar cells measured by photoexcited muon spin spectroscopy 2022 ·Journal of Applied Physics ·John D. Murphy, Nicholas E. Grant, (unknown), Tim Niewelt, (unknown), (unknown), В. П. Маркевич, А. R. Peaker, Pietro P. Altermatt, J. S. Lord, K. Yokoyama	6
5	Dynamics of Hydrogen in Silicon at Finite Temperatures from First Principles 2022 ·physica status solidi (b) ·(unknown), В. П. Маркевич, А. R. Peaker, J. Coutinho	11
6	Acceptor-oxygen defects in silicon: The electronic properties of centers formed by boron, gallium, indium, and aluminum interactions with the oxygen dimer 2021 ·Journal of Applied Physics ·(unknown), В. П. Маркевич, I.D. Hawkins, J. Coutinho, Hussein M. Ayedh, (unknown), N. V. Abrosimov, (unknown), Iain F. Crowe, Matthew P. Halsall, А. R. Peaker	6
7	Electrical Characterization of Thermally Activated Defects in n-Type Float-Zone Silicon 2020 ·IEEE Journal of Photovoltaics ·Yan Zhu, Fiacre Rougieux, Nicholas E. Grant, (unknown), John D. Murphy, В. П. Маркевич, Gianluca Coletti, А. R. Peaker, Ziv Hameiri	8
8	Boron-oxygen related light-induced degradation of Si solar cells: Transformation between minority carrier traps and recombination active centers 2020 ·Research Explorer (The University of Manchester) ·(unknown), Yan Zhu, Fiacre Rougieux, (unknown), В. П. Маркевич, А. R. Peaker, Ziv Hameiri	1
9	Identification of the mechanism responsible for the boron oxygen light induced degradation in silicon photovoltaic cells 2019 ·Journal of Applied Physics ·(unknown), В. П. Маркевич, J. Coutinho, (unknown), Iain F. Crowe, Matthew P. Halsall, I.D. Hawkins, (unknown), Л. И. Мурин, А. R. Peaker	36
10	Lifetime degradation of n-type Czochralski silicon after hydrogenation 2018 ·Journal of Applied Physics ·(unknown), В. П. Маркевич, (unknown), Matthew P. Halsall, Л. И. Мурин, R. Falster, (unknown), J. Coutinho, А. R. Peaker	4
11	Powerful recombination centers resulting from reactions of hydrogen with carbon–oxygen defects in n‐type Czochralski‐grown silicon 2017 ·physica status solidi (RRL) - Rapid Research Letters ·(unknown), В. П. Маркевич, Matthew P. Halsall, А. R. Peaker, (unknown), J. Coutinho, Sven Öberg, Л. И. Мурин, R. Falster, (unknown), E. V. Monakhov, B. G. Svensson	17
12	Permanent annihilation of thermally activated defects which limit the lifetime of float‐zone silicon 2016 ·physica status solidi (a) ·Nicholas E. Grant, В. П. Маркевич, (unknown), А. R. Peaker, Fiacre Rougieux, Daniel Macdonald, John D. Murphy	75
13	Comprehensive study of InAs/GaAs quantum dots by means of complementary methods 2008 ·Chalmers Publication Library (Chalmers University of Technology) ·Mariusz Kaczmarczyk, Olof Engström, (unknown), M. Kaniewska, B. Surma, Shusen Lin, А. R. Peaker	0
14	Seeding Enquiry-Based Learning in Electrical and Electronic Engineering: Case Study 1 - Optoelectronics 2007 ·Norman Powell, А. R. Peaker, (unknown), P. J. Hicks, (unknown)	1
15	Donor level of interstitial hydrogen in GaAs 2006 ·Physica B Condensed Matter ·L. Dobaczewski, K. Bonde Nielsen, A. Nylandsted Larsen, А. R. Peaker	6
16	Oxygen-related radiation-induced defects in SiGe alloys 2003 ·Journal of Physics Condensed Matter ·В. П. Маркевич, А. R. Peaker, Л. И. Мурин, N. V. Abrosimov	5
17	Properties and Growth of MBE Grown Erbium Doped Gallium Arsenide Co-Doped with Selenium 1996 ·MRS Proceedings ·(unknown), K.E. Singer, А. R. Peaker, Andrew Wright	1
18	Single Domain Switching Investigated Using Telegraph Noise Spectroscopy: Possible Evidence for Macroscopic Quantum Tunneling 1995 ·Physical Review Letters ·F. Coppinger, Jan Genoe, D. K. Maude, U. Gennser, J. C. Portal, K.E. Singer, (unknown), (unknown), А. R. Peaker, Andrew Wright	29
19	Low-dimensional structures in semiconductors : from basic physics to applications 1991 ·Plenum Press eBooks ·А. R. Peaker, H. G. Grimmeiss	3
20	Non-radiative recombination via deep states in GaAs 1988 ·Research Explorer (The University of Manchester) ·А. R. Peaker, B. Hamilton	1

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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