А. R. Peaker

5.1k total citations
279 papers, 4.0k citations indexed

About

А. R. Peaker is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, А. R. Peaker has authored 279 papers receiving a total of 4.0k indexed citations (citations by other indexed papers that have themselves been cited), including 249 papers in Electrical and Electronic Engineering, 155 papers in Atomic and Molecular Physics, and Optics and 82 papers in Materials Chemistry. Recurrent topics in А. R. Peaker's work include Silicon and Solar Cell Technologies (161 papers), Semiconductor materials and interfaces (119 papers) and Semiconductor materials and devices (115 papers). А. R. Peaker is often cited by papers focused on Silicon and Solar Cell Technologies (161 papers), Semiconductor materials and interfaces (119 papers) and Semiconductor materials and devices (115 papers). А. R. Peaker collaborates with scholars based in United Kingdom, Belarus and Poland. А. R. Peaker's co-authors include В. П. Маркевич, L. Dobaczewski, B. Hamilton, I.D. Hawkins, K. Bonde Nielsen, Л. И. Мурин, J. Coutinho, M. Missous, P. Kaczor and V. V. Litvinov and has published in prestigious journals such as Nature, Physical Review Letters and Physical review. B, Condensed matter.

In The Last Decade

А. R. Peaker

273 papers receiving 3.9k citations

Author Peers

Peers are selected by citation overlap in the author's most active subfields. citations · hero ref

Author Last Decade Papers Cites
А. R. Peaker 3.5k 2.1k 1.2k 346 245 279 4.0k
S. K. Ghandhi 3.1k 0.9× 1.8k 0.8× 1.1k 0.9× 190 0.5× 255 1.0× 165 3.6k
H. G. Grimmeiss 2.9k 0.8× 2.4k 1.1× 1.4k 1.2× 270 0.8× 351 1.4× 193 3.7k
K.M. Geib 3.4k 1.0× 2.4k 1.1× 699 0.6× 168 0.5× 194 0.8× 177 4.1k
Jan Vanhellemont 3.0k 0.8× 1.5k 0.7× 1.2k 1.0× 401 1.2× 84 0.3× 305 3.5k
Jens W. Tomm 2.1k 0.6× 1.7k 0.8× 858 0.7× 313 0.9× 306 1.2× 277 2.7k
A. Carnera 2.9k 0.8× 1.6k 0.8× 1.7k 1.4× 753 2.2× 201 0.8× 223 3.8k
P. Blood 2.7k 0.8× 2.4k 1.1× 723 0.6× 151 0.4× 466 1.9× 173 3.3k
A. G. Milnes 3.5k 1.0× 2.5k 1.2× 1.2k 1.0× 132 0.4× 279 1.1× 170 4.3k
D. V. Morgan 2.2k 0.6× 952 0.4× 1.1k 0.9× 253 0.7× 277 1.1× 151 2.9k
R. Gwilliam 2.4k 0.7× 1.4k 0.7× 1.6k 1.3× 452 1.3× 468 1.9× 323 3.4k

Countries citing papers authored by А. R. Peaker

Since Specialization
Citations

This map shows the geographic impact of А. R. Peaker's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by А. R. Peaker with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites А. R. Peaker more than expected).

Fields of papers citing papers by А. R. Peaker

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by А. R. Peaker. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by А. R. Peaker. The network helps show where А. R. Peaker may publish in the future.

Co-authorship network of co-authors of А. R. Peaker

This figure shows the co-authorship network connecting the top 25 collaborators of А. R. Peaker. A scholar is included among the top collaborators of А. R. Peaker based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with А. R. Peaker. А. R. Peaker is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Coutinho, J., et al.. (2023). Hydrogen Reactions with Dopants and Impurities in Solar Silicon from First Principles. Solar RRL. 8(2). 3 indexed citations
2.
Coutinho, J., et al.. (2023). Theory of reactions between hydrogen and group-III acceptors in silicon. Physical review. B.. 108(1). 6 indexed citations
3.
Маркевич, В. П., J. Coutinho, N. V. Abrosimov, et al.. (2023). Deep-level defects in Ga-doped silicon crystals. AIP conference proceedings. 2826. 110001–110001. 1 indexed citations
4.
Kruszewski, P., В. П. Маркевич, А. R. Peaker, et al.. (2023). Alloy splitting of the FeGa acceptor level in dilute AlxGa1−xN. Applied Physics Letters. 123(22). 5 indexed citations
5.
Murphy, John D., Nicholas E. Grant, Tim Niewelt, et al.. (2022). Carrier lifetimes in high-lifetime silicon wafers and solar cells measured by photoexcited muon spin spectroscopy. Journal of Applied Physics. 132(6). 6 indexed citations
6.
Маркевич, В. П., et al.. (2022). Dynamics of Hydrogen in Silicon at Finite Temperatures from First Principles. physica status solidi (b). 259(6). 11 indexed citations
7.
Маркевич, В. П., I.D. Hawkins, J. Coutinho, et al.. (2021). Acceptor-oxygen defects in silicon: The electronic properties of centers formed by boron, gallium, indium, and aluminum interactions with the oxygen dimer. Journal of Applied Physics. 130(24). 6 indexed citations
8.
Zhu, Yan, Fiacre Rougieux, Nicholas E. Grant, et al.. (2020). Electrical Characterization of Thermally Activated Defects in n-Type Float-Zone Silicon. IEEE Journal of Photovoltaics. 11(1). 26–35. 8 indexed citations
9.
Маркевич, В. П., J. Coutinho, Iain F. Crowe, et al.. (2019). Identification of the mechanism responsible for the boron oxygen light induced degradation in silicon photovoltaic cells. Journal of Applied Physics. 125(18). 36 indexed citations
10.
Маркевич, В. П., Matthew P. Halsall, Л. И. Мурин, et al.. (2018). Lifetime degradation of n-type Czochralski silicon after hydrogenation. Journal of Applied Physics. 123(16). 4 indexed citations
11.
Маркевич, В. П., Matthew P. Halsall, А. R. Peaker, et al.. (2017). Powerful recombination centers resulting from reactions of hydrogen with carbon–oxygen defects in n‐type Czochralski‐grown silicon. physica status solidi (RRL) - Rapid Research Letters. 11(8). 17 indexed citations
12.
Grant, Nicholas E., В. П. Маркевич, А. R. Peaker, et al.. (2016). Permanent annihilation of thermally activated defects which limit the lifetime of float‐zone silicon. physica status solidi (a). 213(11). 2844–2849. 75 indexed citations
13.
Kaczmarczyk, Mariusz, Olof Engström, M. Kaniewska, et al.. (2008). Comprehensive study of InAs/GaAs quantum dots by means of complementary methods. Chalmers Publication Library (Chalmers University of Technology).
14.
Kolkovsky, Vl., Ole Andersen, L. Dobaczewski, А. R. Peaker, & K. Bonde Nielsen. (2006). Electrical activity of thePtH2complex in silicon: High-resolution Laplace deep-level transient spectroscopy and uniaxial-stress technique. Physical Review B. 73(19). 4 indexed citations
15.
Маркевич, В. П., А. R. Peaker, Л. И. Мурин, & N. V. Abrosimov. (2003). Oxygen-related radiation-induced defects in SiGe alloys. Journal of Physics Condensed Matter. 15(39). S2835–S2842. 5 indexed citations
16.
El-Rahman, K.F. Abd, et al.. (2001). High resolution DLTS of hydrogen reactions with defects in erbium-implanted silicon. Materials Science and Engineering B. 81(1-3). 77–79. 1 indexed citations
17.
Coppinger, F., Jan Genoe, D. K. Maude, et al.. (1995). Single Domain Switching Investigated Using Telegraph Noise Spectroscopy: Possible Evidence for Macroscopic Quantum Tunneling. Physical Review Letters. 75(19). 3513–3516. 29 indexed citations
18.
Peaker, А. R. & H. G. Grimmeiss. (1991). Low-dimensional structures in semiconductors : from basic physics to applications. Plenum Press eBooks. 3 indexed citations
19.
Peaker, А. R. & B. Hamilton. (1988). Non-radiative recombination via deep states in GaAs. Research Explorer (The University of Manchester). 1 indexed citations
20.
Mottram, Alexander D., et al.. (1971). Monolithic Light Emitting Diode Arrays using Gallium Phosphide. Nature. 232(5311). 469–470. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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