В. П. Маркевич

3.5k total citations
221 papers, 2.8k citations indexed

About

В. П. Маркевич is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, В. П. Маркевич has authored 221 papers receiving a total of 2.8k indexed citations (citations by other indexed papers that have themselves been cited), including 200 papers in Electrical and Electronic Engineering, 104 papers in Materials Chemistry and 94 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in В. П. Маркевич's work include Silicon and Solar Cell Technologies (172 papers), Silicon Nanostructures and Photoluminescence (94 papers) and Semiconductor materials and interfaces (89 papers). В. П. Маркевич is often cited by papers focused on Silicon and Solar Cell Technologies (172 papers), Silicon Nanostructures and Photoluminescence (94 papers) and Semiconductor materials and interfaces (89 papers). В. П. Маркевич collaborates with scholars based in United Kingdom, Belarus and Sweden. В. П. Маркевич's co-authors include А. R. Peaker, J. L. Lindström, Л. И. Мурин, Л.И. Мурин, J. Coutinho, Tomas Hallberg, M. Suezawa, L. Dobaczewski, V. V. Litvinov and I.D. Hawkins and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

В. П. Маркевич

217 papers receiving 2.8k citations

Peers

В. П. Маркевич

EEE

AMPO

EOMM

J. L. Lindström Sweden

Bert Brijs Belgium

Edouard V. Monakhov Norway

Michio Tajima Japan

A. Armigliato Italy

D. J. Gravesteijn Netherlands

M. Posselt Germany

M. G. Grimaldi Italy

C. A. Londos Greece

J. O. McCaldin United States

J. L. Lindström Sweden

В. П. Маркевич

2.8k ×1.1

EEE

955 ×0.8

AMPO

1.1k ×1.0

380 ×1.1

184 ×1.6

EOMM

Citations per year, relative to В. П. Маркевич В. П. Маркевич (= 1×) peers J. L. Lindström

Countries citing papers authored by В. П. Маркевич

Since Specialization

Citations

This map shows the geographic impact of В. П. Маркевич's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by В. П. Маркевич with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites В. П. Маркевич more than expected).

Fields of papers citing papers by В. П. Маркевич

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by В. П. Маркевич. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by В. П. Маркевич. The network helps show where В. П. Маркевич may publish in the future.

Co-authorship network of co-authors of В. П. Маркевич

This figure shows the co-authorship network connecting the top 25 collaborators of В. П. Маркевич. A scholar is included among the top collaborators of В. П. Маркевич based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with В. П. Маркевич. В. П. Маркевич is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Coutinho, J., et al.. (2023). Hydrogen Reactions with Dopants and Impurities in Solar Silicon from First Principles. Solar RRL. 8(2). 3 indexed citations

Coutinho, J., et al.. (2023). Theory of reactions between hydrogen and group-III acceptors in silicon. Physical review. B.. 108(1). 6 indexed citations

Маркевич, В. П., J. Coutinho, N. V. Abrosimov, et al.. (2023). Deep-level defects in Ga-doped silicon crystals. AIP conference proceedings. 2826. 110001–110001. 1 indexed citations

Kruszewski, P., В. П. Маркевич, А. R. Peaker, et al.. (2023). Alloy splitting of the FeGa acceptor level in dilute AlxGa1−xN. Applied Physics Letters. 123(22). 5 indexed citations

Murphy, John D., Nicholas E. Grant, Tim Niewelt, et al.. (2022). Carrier lifetimes in high-lifetime silicon wafers and solar cells measured by photoexcited muon spin spectroscopy. Journal of Applied Physics. 132(6). 6 indexed citations

Маркевич, В. П., et al.. (2022). Dynamics of Hydrogen in Silicon at Finite Temperatures from First Principles. physica status solidi (b). 259(6). 11 indexed citations

Маркевич, В. П., I.D. Hawkins, J. Coutinho, et al.. (2021). Acceptor-oxygen defects in silicon: The electronic properties of centers formed by boron, gallium, indium, and aluminum interactions with the oxygen dimer. Journal of Applied Physics. 130(24). 6 indexed citations

Zhu, Yan, Fiacre Rougieux, Nicholas E. Grant, et al.. (2020). Electrical Characterization of Thermally Activated Defects in n-Type Float-Zone Silicon. IEEE Journal of Photovoltaics. 11(1). 26–35. 8 indexed citations

Zhu, Yan, et al.. (2020). Boron-oxygen related light-induced degradation of Si solar cells: Transformation between minority carrier traps and recombination active centers. Research Explorer (The University of Manchester). 689–692. 1 indexed citations

10.

Маркевич, В. П., J. Coutinho, Iain F. Crowe, et al.. (2019). Identification of the mechanism responsible for the boron oxygen light induced degradation in silicon photovoltaic cells. Journal of Applied Physics. 125(18). 36 indexed citations

11.

Маркевич, В. П., Matthew P. Halsall, Л. И. Мурин, et al.. (2018). Lifetime degradation of n-type Czochralski silicon after hydrogenation. Journal of Applied Physics. 123(16). 4 indexed citations

12.

Маркевич, В. П., Matthew P. Halsall, А. R. Peaker, et al.. (2017). Powerful recombination centers resulting from reactions of hydrogen with carbon–oxygen defects in n‐type Czochralski‐grown silicon. physica status solidi (RRL) - Rapid Research Letters. 11(8). 17 indexed citations

13.

Grant, Nicholas E., В. П. Маркевич, А. R. Peaker, et al.. (2016). Permanent annihilation of thermally activated defects which limit the lifetime of float‐zone silicon. physica status solidi (a). 213(11). 2844–2849. 75 indexed citations

14.

Маркевич, В. П., et al.. (2009). Formation of Radiation-Induced Defects in Si Crystals Irradiated with Electrons at Elevated Temperatures. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 156-158. 299–304. 7 indexed citations

15.

Litvinov, V. V., et al.. (2007). Formation of Hydrogen-Related Shallow Donors in Ge<sub>1-x</sub>Si<sub>x</sub> Crystals Implanted with Protons. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 131-133. 131–136. 1 indexed citations

16.

Маркевич, В. П., А. R. Peaker, Л. И. Мурин, & N. V. Abrosimov. (2003). Oxygen-related radiation-induced defects in SiGe alloys. Journal of Physics Condensed Matter. 15(39). S2835–S2842. 5 indexed citations

17.

Coutinho, J., R. Jones, Л. И. Мурин, et al.. (2001). Thermal Double Donors and Quantum Dots. Physical Review Letters. 87(23). 235501–235501. 25 indexed citations

18.

Маркевич, В. П. & Л.И. Мурин. (1996). Characteristic features of the initial kinetics of the accumulation of thermal donors in hydrogen-saturated Si crystals. Semiconductors. 30(2). 148–151. 2 indexed citations

19.

Мурин, Л.И. & В. П. Маркевич. (1993). Mechanism for suppression of thermal donor generation in silicon by carbon impurity atoms. Semiconductors. 27(2). 108–111. 1 indexed citations

20.

Маркевич, В. П., et al.. (1993). Accelerated formation of thermal donors in hydrogen-saturated Si crystals. Technical Physics Letters. 19(10). 617–618. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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