C. Ugolini

466 total citations
13 papers, 378 citations indexed

About

C. Ugolini is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, C. Ugolini has authored 13 papers receiving a total of 378 indexed citations (citations by other indexed papers that have themselves been cited), including 13 papers in Condensed Matter Physics, 8 papers in Electrical and Electronic Engineering and 8 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in C. Ugolini's work include GaN-based semiconductor devices and materials (13 papers), Ga2O3 and related materials (8 papers) and Semiconductor materials and devices (5 papers). C. Ugolini is often cited by papers focused on GaN-based semiconductor devices and materials (13 papers), Ga2O3 and related materials (8 papers) and Semiconductor materials and devices (5 papers). C. Ugolini collaborates with scholars based in United States and Poland. C. Ugolini's co-authors include J. Y. Lin, H. X. Jiang, J. M. Zavada, Neeraj Nepal, R. Dahal, Talal Altahtamouni, M. L. Nakarmi, A. Sedhain, S. J. Pearton and Ryan Davies and has published in prestigious journals such as Applied Physics Letters, Materials Science and Engineering B and MRS Proceedings.

In The Last Decade

C. Ugolini

13 papers receiving 361 citations

Peers

C. Ugolini
J. Woodward United States
Chinkyo Kim South Korea
Tommy Ive Sweden
C.H. Liu Taiwan
Shi You United States
M. W. Cho Japan
Da-Wei Lin Taiwan
O. Gelhausen Australia
J. Woodward United States
C. Ugolini
Citations per year, relative to C. Ugolini C. Ugolini (= 1×) peers J. Woodward

Countries citing papers authored by C. Ugolini

Since Specialization
Citations

This map shows the geographic impact of C. Ugolini's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. Ugolini with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. Ugolini more than expected).

Fields of papers citing papers by C. Ugolini

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. Ugolini. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. Ugolini. The network helps show where C. Ugolini may publish in the future.

Co-authorship network of co-authors of C. Ugolini

This figure shows the co-authorship network connecting the top 25 collaborators of C. Ugolini. A scholar is included among the top collaborators of C. Ugolini based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C. Ugolini. C. Ugolini is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

13 of 13 papers shown
1.
Ugolini, C., et al.. (2012). Formation energy of optically active Er3+ centers in Er doped GaN. Applied Physics Letters. 101(5). 51114–51114. 15 indexed citations
2.
Dahal, R., C. Ugolini, J. Y. Lin, H. X. Jiang, & J. M. Zavada. (2010). 1.54   μ m emitters based on erbium doped InGaN p-i-n junctions. Applied Physics Letters. 97(14). 41 indexed citations
3.
Nepal, Neeraj, J. M. Zavada, R. Dahal, et al.. (2009). Optical enhancement of room temperature ferromagnetism in Er-doped GaN epilayers. Applied Physics Letters. 95(2). 17 indexed citations
4.
Sedhain, A., C. Ugolini, J. Y. Lin, H. X. Jiang, & J. M. Zavada. (2009). Photoluminescence properties of erbium doped InGaN epilayers. Applied Physics Letters. 95(4). 8 indexed citations
5.
Dahal, R., C. Ugolini, J. Y. Lin, H. X. Jiang, & J. M. Zavada. (2009). Erbium-doped GaN optical amplifiers operating at 1.54 μm. Applied Physics Letters. 95(11). 43 indexed citations
6.
Dahal, R., C. Ugolini, J. Y. Lin, H. X. Jiang, & J. M. Zavada. (2008). Current-injected 1.54μm light emitting diodes based on erbium-doped GaN. Applied Physics Letters. 93(3). 21 indexed citations
7.
Makarova, Katerina, M. Stachowicz, A. Kozanecki, et al.. (2007). Spectroscopic studies of Er-centers in MOCVD grown GaN layers highly doped with Er. Materials Science and Engineering B. 146(1-3). 193–195. 14 indexed citations
8.
Ugolini, C., Neeraj Nepal, J. Y. Lin, H. X. Jiang, & J. M. Zavada. (2007). Excitation dynamics of the 1.54μm emission in Er doped GaN synthesized by metal organic chemical vapor deposition. Applied Physics Letters. 90(5). 37 indexed citations
9.
Zavada, J. M., Neeraj Nepal, C. Ugolini, et al.. (2007). Optical and magnetic behavior of erbium-doped GaN epilayers grown by metal-organic chemical vapor deposition. Applied Physics Letters. 91(5). 23 indexed citations
10.
Ugolini, C., Neeraj Nepal, J. Y. Lin, H. X. Jiang, & J. M. Zavada. (2006). Erbium-doped GaN epilayers synthesized by metal-organic chemical vapor deposition. MRS Proceedings. 955. 1 indexed citations
11.
Nakarmi, M. L., Neeraj Nepal, C. Ugolini, et al.. (2006). Correlation between optical and electrical properties of Mg-doped AlN epilayers. Applied Physics Letters. 89(15). 105 indexed citations
12.
Ugolini, C., Neeraj Nepal, J. Y. Lin, H. X. Jiang, & J. M. Zavada. (2006). Erbium-doped GaN epilayers synthesized by metal-organic chemical vapor deposition. Applied Physics Letters. 89(15). 52 indexed citations
13.
Jiang, H. X., C. Ugolini, J. Y. Lin, & J. M. Zavada. (2006). III-Nitride Wide Bandgap Semiconductors for Optical Communications. 82. 36–37. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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