Balaji Raghothamachar

2.3k citations

182 papers · 1.7k indexed · h-index 22

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials 41
Electrical and Electronic Engineering top 5%
- Silicon Carbide Semiconductor Technologies 122
- Silicon and Solar Cell Technologies 76
- Thin-Film Transistor Technologies 36
- Semiconductor materials and devices 21
Electronic, Optical and Magnetic Materials top 10%
Ceramics and Composites top 10%
Atomic and Molecular Physics, and Optics top 10%
- Semiconductor materials and interfaces 39
Mechanics of Materials
- Metal and Thin Film Mechanics 22
Biomedical Engineering
- Acoustic Wave Resonator Technologies 17

Co-authors: Michael Dudley Edward Sanchez Fangzhen Wu Zlatko Sitar Rafael Dalmau L. J. SchowalterYu YangMark J. Loboda
Cited by: Condensed Matter Physics Electrical and Electronic Engineering Electronic, Optical and Magnetic Materials
Journals: Journal of Crystal Growth (27 papers)Journal of Electronic Materials (25 papers)Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum (7 papers)
Partner nations: United States Japan United Kingdom

In The Last Decade

Balaji Raghothamachar

170 papers receiving 1.7k citations

Peers

Countries citing papers authored by Balaji Raghothamachar

Since Specialization

Citations

This map shows the geographic impact of Balaji Raghothamachar's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Balaji Raghothamachar with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Balaji Raghothamachar more than expected).

Fields of papers citing papers by Balaji Raghothamachar

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Balaji Raghothamachar. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Balaji Raghothamachar. The network helps show where Balaji Raghothamachar may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Balaji Raghothamachar, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Balaji Raghothamachar Line = papers co-authored together Balaji Raghothamachar links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Frank Dislocations Generation and Behavior Investigation in PVT-Grown 4H-SiC Crystals Journal of Electronic Materials ·Shanshan Hu,Schepetilnikov Mikhail,Balaji Raghothamachar,Michael Dudley	2025	0
2	Analysis of Threading Edge Dislocation Low-Angle Grain Boundary Network Distributions in 4H-SiC Wafers Through Synchrotron X-ray Topography and Ray-Tracing Simulation Journal of Electronic Materials ·John O. Amoss,Zeyu Chen,Shanshan Hu,Balaji Raghothamachar,Michael Dudley	2025	1
3	Analysis of dislocation configurations in SiC crystals through X-ray topography aided by ray tracing simulations Materials Science in Semiconductor Processing ·John O. Amoss,Zeyu Chen,Shanshan Hu,Yafei Liu,Balaji Raghothamachar,Michael Dudley	2024	4
4	Analysis of Defect Structures during the Early-Stages of PVT Growth of 4H-SiC Crystals Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum ·Shanshan Hu,Yafei Liu,A Lavinya,J B Lee,Balaji Raghothamachar,Michael Dudley,Yoon Hee 정윤희Jung,سپیده سعادتمند,Paccaud Fred Collab.,洋司渡部,И.Е. Алпацкая,L. Monnë,Ruoqian Wu	2024	0
5	Investigation of Dislocation Behaviors in 4H-SiC Substrate during Post-Growth Thermal Treatment Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum ·Hong Peng,Rona Angoluan,Zhi‐Qiang Shi,Jovencio P. Romo,Can Zhu,Chao Gao,Balaji Raghothamachar,Michael Dudley	2024	2
6	Investigating Dislocation Arrays Induced by Seed Scratches during PVT 4H-SiC Crystal Growth Using Synchrotron X-Ray Topography Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum ·J B Lee,Yafei Liu,A Lavinya,Shanshan Hu,Balaji Raghothamachar,Michael Dudley,V.V. Pushkarev,психологии и искусств Институт педагогики,Gil Yong Chung,Edward Sanchez,Sternbæk Louise	2024	2
7	Mechanism of novel defect multiplication impacting high power 4H-SiC devices Materials & Design ·Nadeemullah A. Mahadik,Michael Dudley,Balaji Raghothamachar,Schepetilnikov Mikhail,Robert E. Stahlbush,Rebecca Nerenberg,Aivars J. Lelis,W. Sung	2024	1
8	Defect-curing effects of fast neutrons on n-type GaN Materials Chemistry and Physics ·Fahmeeda F. Shaikh,Yafei Liu,Balaji Raghothamachar,Michael Dudley,Vladimir Ychpas Pisco	2024	1
9	Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions at Elevated Temperatures Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum ·A Lavinya,Yafei Liu,J B Lee,Shanshan Hu,Balaji Raghothamachar,Reza Ghandi,D. Yarehkha,Kenneth K. P. Leung,左旭初,Michael Dudley	2024	0
10	Investigation of defect formation at the early stage of PVT-grown 4H-SiC crystals Journal of Crystal Growth ·Shanshan Hu,Yafei Liu,John O. Amoss,Schepetilnikov Mikhail,Xiao Tong,Balaji Raghothamachar,Michael Dudley	2023	10
11	Analysis of Basal Plane Dislocation Motion Induced by p+ Ion Implantation Using Synchrotron X-Ray Topography Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum ·A Lavinya,Yafei Liu,Hong Peng,J B Lee,Shanshan Hu,Balaji Raghothamachar,Michael Dudley,田邉里奈,Stephan Boehm,Woongje Sung	2023	4
12	Formation and propagation mechanism of complex stacking fault in 180 μm thick 4H-SiC epitaxial layers Scripta Materialia ·Nadeemullah A. Mahadik,Robert E. Stahlbush,Michael Dudley,Balaji Raghothamachar,Rebecca Nerenberg,Aivars J. Lelis,Woongje Sung	2023	6
13	Effective Penetration Depth Investigation for Frank Type Dislocation (Deflected TSDs/TMDs) on Grazing Incidence Synchrotron X-Ray Topographs of 4H-SiC Wafers Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum ·J B Lee,Hong Peng,A Lavinya,Shanshan Hu,Yafei Liu,Balaji Raghothamachar,Michael Dudley	2023	4
14	Basal Plane Dislocation Slip Band Characterization and Epitaxial Propagation in 4H SiC Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum ·Gil Yong Chung,Robert D. Viveros,Charles Lee,Sternbæk Louise,V.V. Pushkarev,J B Lee,Balaji Raghothamachar,Michael Dudley	2023	1
15	Upgraded LauePt4 for rapid recognition and fitting of Laue patterns from crystals with unknown orientations Journal of Applied Crystallography ·Yujie Gao,Yafei Liu,Balaji Raghothamachar,Michael Dudley	2023	2
16	Characterization of defects and strain in the (AlxGa(1−x))0.5In0.5P/ GaAs system by synchrotron X-ray topography Journal of Crystal Growth ·Hongyu Peng,Severina Andréa,Yafei Liu,Balaji Raghothamachar,Michael Dudley	2019	1
17	Studies on Doping Concentration Variations in 4H-SiC Substrates Using X-ray Contour Mapping ECS Transactions ·Yu Yang,V.A. Makarskij,Balaji Raghothamachar,Xiaojun Chan,Taejin Kim,Michael Dudley	2017	1
18	(Invited) Study on the Role of Thermal Stress on Prismatic Slip of Dislocations in 4H-SiC Crystals Grown by PVT Method ECS Transactions ·V.A. Makarskij,Yu Yang,Elizabeth Nancy Buchanan,Balaji Raghothamachar,Michael Dudley	2016	6
19	Analysis of Dislocation Behavior in Low Dislocation Density, PVT-Grown, Four-Inch Silicon Carbide Single Crystals MRS Proceedings ·Michael Dudley,Shayan Byrappa,Huanhuan Wang,Fangzhen Wu,Gustavo Soto Castillo,Balaji Raghothamachar,Abdelhamid Baroura,Edward Sanchez,Andrew Lee,M. Widawski,Mark J. Loboda	2010	20
20	Defect analysis in crystals using X‐ray topography Microscopy Research and Technique ·Balaji Raghothamachar,G. Dhanaraj,Jie Bai,Michael Dudley	2006	36

About Balaji Raghothamachar

Balaji Raghothamachar is a scholar working on Condensed Matter Physics, Ceramics and Composites and Electrical and Electronic Engineering, having authored 182 papers that have together received 1.7k indexed citations. Recurring topics across this work include Silicon Carbide Semiconductor Technologies (122 papers), Silicon and Solar Cell Technologies (76 papers), GaN-based semiconductor devices and materials (41 papers), Semiconductor materials and interfaces (39 papers), Thin-Film Transistor Technologies (36 papers), Metal and Thin Film Mechanics (22 papers), Semiconductor materials and devices (21 papers) and Acoustic Wave Resonator Technologies (17 papers). The work is most often cited by research in Condensed Matter Physics (609 citations), Electrical and Electronic Engineering (1.2k citations) and Electronic, Optical and Magnetic Materials (365 citations). Balaji Raghothamachar has collaborated with scholars based in United States, Japan and United Kingdom. Frequent co-authors include Michael Dudley, Edward Sanchez, Fangzhen Wu, Zlatko Sitar, Rafael Dalmau, L. J. Schowalter, Yu Yang, Mark J. Loboda, J. Carlos Rojo and Kenneth E. Morgan. Their work appears in journals such as Journal of Crystal Growth, Journal of Electronic Materials, Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum, Materials science forum and Journal of Applied Physics.

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